EP0272636A2
Expired / Lapsed
EP
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Method of manufacturing group III-V compound semiconductor solar battery
Assignee: OFFERTA DI LICENZA AL PUBBLICO
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Filing: 1987-12-17
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Granted: —
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Expires: 2007-12-17
Abstract
Abstract After a liquid-phase epitaxial growth step by an n-type GaAs saturated solution (21) is terminated, a substrate (1) is temporarily dipped in an undoped GaAs saturated or supersaturated solution (22), and thereafter liquid-phase epitaxial growth is performed by a p-type Al x Ga 1-x As saturated solution (23). Thus, the n-type GaAs saturated solution (21) is prevented from being mixed into the p-type Al x Ga 1-x As saturated solution (23) to contaminate the same, whereby a solar battery of high quality can be obtained even if the number of times of crystallization is increased.
Inventors
- 👤 Susumu Mitsubishi Denki K. K. Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 19:48
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/144; H10F71/00; H10F71/127; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/066
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
127 words
A method of manufacturing a group III-V compound semiconductor solar battery, comprising steps of: preparing a first conductivity type group III-V compound crystal substrate; bringing said substrate into contact with a first conductivity type group III-V compound saturated solution to form an epitaxial substrate having a first conductivity type group III-V compound epitaxial layer crystallized on said substrate; dipping said epitaxial substrate in an undoped group III-V compound saturated or supersaturated solution for a prescribed time; and bringing said epitaxial substrate into contact with a second conductivity type group III-V ternary compound saturated solution to form p-n junction by inverting a surface of said epitaxial substrate into a second conductivity type and to crystallize a second conductivity type group III-V ternary compound epitaxial layer on the surface.
Claim 2
Independent Claim
127 words
A method of manufacturing a group III-V compound semiconductor solar battery, comprising steps of: preparing a first conductivity type group III-V compound crystal substrate; bringing said substrate into contact with a first conductivity type group III-V compound saturated solution to form an epitaxial substrate having a first conductivity type group III-V compound epitaxial layer crystallized on said substrate; dipping said epitaxial substrate in an undoped group III-V compound saturated or supersaturated solution for a prescribed time; and bringing said epitaxial substrate into contact with a second conductivity type group III-V ternary compound saturated solution to form p-n junction by inverting a surface of said epitaxial substrate into a second conductivity type and to crystallize a second conductivity type group III-V ternary compound epitaxial layer on the surface.
Claim 3
Dependent Claim
23 words
A method of manufacturing a group III-V compound semiconductor solar battery in accordance with claim 1, wherein said group III-V compound is GaAs.
Claim 4
Dependent Claim
28 words
A method of manufacturing a group III-V compound semiconductor solar battery in accordance with claim 1, wherein said group III-V ternary compound is Al x Ga 1-x As.
Claim 5
Dependent Claim
30 words
A method of manufacturing a group III-V compound semiconductor solar battery in accordance with claim 1, wherein said first conductivity type is n-type and said second conductivity type is p-type.
References Cited (Backward Citations)
No citation records indexed.
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