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EP0269211A2
Expired / Lapsed
EP
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Semiconductor device having a metallic layer
Assignee: Fujitsu Ltd
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Filing: 1987-09-11
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Granted: —
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Expires: 2007-09-11
Abstract
Abstract A semiconductor device comprises a silicon substrate (16), an insulating film (18) in which a contact hole (18a) is formed, a metallic layer (20) deposited on said silicon substrate through the contact hole, for forming an ohmic contact to the silicon substrate, a diffusion barrier layer (22) deposited on the metallic layer, for preventing reaction and interdiffusion between copper and silicon, and a metallization film (24) including at least copper deposited on the barrier layer.
Inventors
- 👤 Kazuhiro Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 02:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
87 words
A semiconductor device comprising a silicon substrate (16), an insulating film (18) in which a contact hole (18a) is formed, and a metallization film (24) including at least copper, characterized in that there are provided a metallic layer (20) deposited on said silicon substrate through said contact hole, for forming an ohmic contact to said silicon substrate and a diffusion barrier layer (22) deposited on said metallic layer, for preventing reaction and interdiffusion between copper and silicon, and said metallization film is deposited on said barrier layer.
Claim 2
Dependent Claim
87 words
A semiconductor device comprising a silicon substrate (16), an insulating film (18) in which a contact hole (18a) is formed, and a metallization film (24) including at least copper, characterized in that there are provided a metallic layer (20) deposited on said silicon substrate through said contact hole, for forming an ohmic contact to said silicon substrate and a diffusion barrier layer (22) deposited on said metallic layer, for preventing reaction and interdiffusion between copper and silicon, and said metallization film is deposited on said barrier layer.
Claim 3
Dependent Claim
42 words
A semiconductor device as claimed in claim 1, characterized in that said barrier layer is made of a material selected from the group consisting of titanium nitride, tungsten, tungsten nitride, zirconium nitride, titanium carbide, tungsten carbide, tantalum, tantalum nitride and titanium tungsten.
Claim 4
Dependent Claim
36 words
A semiconductor device as claimed in any of claims 1 and 2, characterized in that said metallization film is made of by a material selected from the group consisting of copper, copper-titanium alloy and copper-zirconium alloy.
Claim 5
Dependent Claim
33 words
A semiconductor device as claimed in any of claims 1 to 3, characterized in that said metallic layer is made of a material selected from the group consisting of titanium, aluminum and platinum.
Claim 6
Dependent Claim
29 words
A semiconductor device as claimed in any of claims 1 to 4, characterized in that a thickness of said barrier layer is in the range of 500Å to 3,000Å.
Claim 7
Dependent Claim
29 words
A semiconductor device as claimed in any of claims 1 to 5, characterized in that a thickness of said metallic layer is in the range of 100Å to 1,000Å.
Claim 8
Dependent Claim
29 words
A semiconductor device as claimed in any of claims 1 to 6, characterized in that a thickness of said metallization film is in the range of 3,000Å to 2µm.
References Cited (Backward Citations)
No citation records indexed.
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