EP0269111A2
Expired / Lapsed
EP
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Method of forming a thin aluminium film
Assignee: Nissin Electric Co Ltd
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Filing: 1987-11-26
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Granted: —
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Expires: 2007-11-26
Abstract
Abstract A method for depositing a thin aluminum film in a vacuum on a surface of a substrate which comprises the steps of: (a) Irradiating the surface of the substrate with a beam of ions of an inert gas, having a kinetic energy ranging from 100 eV to 1,000 eV at an angle of incidence ranging from about 0° to 60° to a normal of the surface. (b) Depositing vaporized aluminum on the surface of the substrate, in which the ratio of the amount of ions irradiating the surface to the amount of vapor deposited on the surface ranges from about 0.5% to 30% and wherein the temperature of the substrate ranges from about room temperature to 300°C.
Inventors
- 👤 Yasunori C/O Nissin Electric Co. Ltd. Ando
- 👤 Kiyoshi C/O Nissin Electric Co. Ltd. Ogata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 05:46
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/51; C04B41/80; C04B41/81; C04B41/85; C04B41/88; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/18; C23C14/22; C04B2111/00; C04B2111/00474; C04B2111/00844
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
124 words
A method for forming a thin aluminum film in a vacuum on a surface of a substrate comprising the steps of: (a) irradiating said surface of said substrate with a beam of ions of an inert gas or aluminum, said beam having an angle of incidence ranging from about 0° to 60° to the normal of said surface, and said ions having a kinetic energy ranging from 100 eV to 1,000 eV; and (b) depositing vaporized aluminum on said surface of said substrate, in which the ratio of the amount of ions irradiating said surface to the amount of vapor deposited on said surface ranges from about 0.005 to 0.3, and wherein the temperatures of said substrate ranges from about room temperature to 300°C.
Claim 2
Independent Claim
124 words
A method for forming a thin aluminum film in a vacuum on a surface of a substrate comprising the steps of: (a) irradiating said surface of said substrate with a beam of ions of an inert gas or aluminum, said beam having an angle of incidence ranging from about 0° to 60° to the normal of said surface, and said ions having a kinetic energy ranging from 100 eV to 1,000 eV; and (b) depositing vaporized aluminum on said surface of said substrate, in which the ratio of the amount of ions irradiating said surface to the amount of vapor deposited on said surface ranges from about 0.005 to 0.3, and wherein the temperatures of said substrate ranges from about room temperature to 300°C.
Claim 3
Dependent Claim
21 words
A method as claimed in Claim 1, wherein said inert gas is selected from the group comprising Ne, Ar and He.
Claim 4
Dependent Claim
12 words
A method as claimed in Claim 1, wherein said ion is aluminum.
Claim 5
Dependent Claim
24 words
A method as claimed in Claim 1, wherein said substrate is fabricated from a material selected from the group consisting of Si and SiO₂.
Claim 6
Dependent Claim
16 words
A method as claimed in Claim 1, wherein said irradiating and depositing steps are performed simultaneously.
Claim 7
Dependent Claim
17 words
A method as claimed in Claim 1, wherein said angle of incidence ranges from 20° to 30°.
Claim 8
Dependent Claim
14 words
A method as claimed in Claim 1, herein said angle of incidence is 0°.
Claim 9
Dependent Claim
17 words
A method as claimed in Claim 1, wherein said angel of incidence ranges from 10° to 40°.
References Cited (Backward Citations)
No citation records indexed.
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