EP0268021A2
Expired / Lapsed
EP
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Sloped contact etch process
Assignee: Motorola Solutions Inc
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Filing: 1987-08-13
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Granted: —
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Expires: 2007-08-13
Abstract
Abstract The process described provides a sloped contact etch. The process has the steps of: etching a substrate 12 then removing the polymer that is produced during the substrate 12 etch. These two steps are alternated until a desired depth is reached. Next, the resist 11 is etched followed by an etch of the substrate 12. This is then repeated until the required depth is reached. By varying the duration and repetition of the etches, the slope of the etch can be regulated.
Inventors
- 👤 Robert K. Berglund
- 👤 Karl E. Mautz
- 👤 Roger Tyldesley
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 07:51
CPC Classifications
H; H10; H10P; H10P50/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; H10P50/20; H10P50/24; H10P50/242; H10P50/28; H10P50/282; H10P50/283; H10P50/69; H10P50/691; H10P50/693; H10P50/694; Y; Y10; Y10S; Y10S438/00; Y10S438/963; Y10S438/978
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
86 words
A process is claimed for providing a sloped contact etch comprising the steps of: (a) etching a substrate 12 a first time in an area defined by a resist layer 11; (b) removing a polymer produced on said substrate 12 during said step of etching said substrate 12 a first time; (c) etching said resist layer 11 thereby increasing the area of said substrate 12 defined by said resist layer 11; and (d) etching said substrate 12 in the area defined by said resist layer 11.
Claim 2
Dependent Claim
49 words
The process of claim 1 further comprising, following step (b), the steps of: etching said substrate 12 a second time in said area defined by said resist layer 11; and removing a polymer produced on said substrate 12 during said step of etching said substrate 12 a second time.
Claim 3
Dependent Claim
28 words
The process of claim 1 further comprising, following step (d), the step of repeating steps (c) and (d) until a desired depth in said substrate 12 is reached.
Claim 4
Dependent Claim
34 words
The process of claim 1 wherein a power level is ramped from a first level during step (a) down to a second level and ramped back up to a third level during step (c).
Claim 5
Dependent Claim
140 words
A process is claimed for providing a sloped contact etch comprising the steps of: (a) etching a substrate 12 a first time in an area defined by a resist layer 11; (b) removing a polymer produced on said substrate 12 during said step of etching said substrate 12 a first time; (c) etching said substrate 12 a second time in said area defined by said resist layer 11; (d) removing a polymer produced on said substrate 12 during said step of etching said substrate 12 a second time; (e) etching said substrate 12 a third time in said area defined by said resist layer 11; (f) etching said resist layer 11 thereby increasing the area of said substrate 12 defined by said resist layer 11; and (g) etching said substrate 12 in the area defined by said resist layer 11.
Claim 6
Dependent Claim
21 words
The process of claim 5 wherein the etching of steps (a), (c) and (e) has a duration of approximately 6.7 minutes.
Claim 7
Dependent Claim
20 words
The process of claim 5 wherein the etching of steps (b) and (d) has a duration of approximately 0.8 minutes.
Claim 8
Dependent Claim
18 words
The process of claim 5 wherein the etching of step (f) has a duration of approximately 2.1 minutes.
Claim 9
Dependent Claim
18 words
The process of claim 5 wherein the etching of step (g) has a duration of approximately 2.5 minutes.
Claim 10
Dependent Claim
24 words
The process of claim 5 further comprising, following step (g), the step of repeating steps (f) and (g) until a desired depth is reached.
References Cited (Backward Citations)
No citation records indexed.
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