EP0264913A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Plasma processing apparatus
Assignee: Hitachi Ltd
•
Filing: 1987-10-20
•
Granted: —
•
Expires: 2007-10-20
Abstract
Abstract Microwaves supplied from a magnetron (3; 32) through a waveguide (2; 30) are resonated in a cavity resonator (1; 31) to increase their amplitude. The resonated microwaves are emitted into a plasma production chamber (6; 33) through slits (5c, 5c', 5c''; 43a) and a wall (4, 33a). Then plasma is produced in the plasma production chamber (6; 33) into which plasma processing gas is introduced. The plasma is employed for uniformly processing a substrate (12).
Inventors
- 👤 Toru Otsubo
- 👤 Yasuhiro Yamaguchi
- 👤 Takahiko Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:23
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32211; H01J37/32238; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/517; H01J37/32247
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
126 words
A plasma processing apparatus comprising: a microwave generation source (3; 32); a waveguide (2; 30) for supplying the microwaves from the microwave generation source; a cavity resonator (1; 31) for resonating the microwaves supplied from the waveguide to increase the amplitude thereof; a slit means (5, 5ʹ, 5ʺ, 5ʹʹʹ, 5ʹʹʹʹ, 55; 43) having at least one slit (5c, 5cʹ, 5cʺ; 43a) provided on a wall (4; 33a) of the cavity resonator (1; 31) which can transmit the microwaves; and a plasma producing chamber (6; 33) in which plasma is produced by the microwaves introduced through the at least one slit and the wall separating the plasma producing chamber from said cavity resonator and by externally introduced processing gas, and a substrate is processed by the plasma.
Claim 2
Dependent Claim
126 words
A plasma processing apparatus comprising: a microwave generation source (3; 32); a waveguide (2; 30) for supplying the microwaves from the microwave generation source; a cavity resonator (1; 31) for resonating the microwaves supplied from the waveguide to increase the amplitude thereof; a slit means (5, 5ʹ, 5ʺ, 5ʹʹʹ, 5ʹʹʹʹ, 55; 43) having at least one slit (5c, 5cʹ, 5cʺ; 43a) provided on a wall (4; 33a) of the cavity resonator (1; 31) which can transmit the microwaves; and a plasma producing chamber (6; 33) in which plasma is produced by the microwaves introduced through the at least one slit and the wall separating the plasma producing chamber from said cavity resonator and by externally introduced processing gas, and a substrate is processed by the plasma.
Claim 3
Dependent Claim
55 words
A plasma processing apparatus according to Claim 1, wherein said cavity resonator (1; 31) is formed in the shape of a cylinder (1) and said slit means is provided in form of slit plate (5, 5ʹ, 5ʺ, 5ʹʹʹ, 5ʹʹʹʹ, 55) on the bottom face so as to be one wall of the plasma producing chamber.
Claim 4
Dependent Claim
30 words
A plasma processing apparatus according to Claim 1, wherein said plasma producing chamber (6) is provided with means (13, 14) for generating a magnetic field for increasing the plasma density.
Claim 5
Dependent Claim
34 words
A plasma processing apparatus according to Claim 1, wherein said plasma producing chamber (6) is, in its interior, provided with a grid plate (20) facing the substrate for shielding the ions in the plasma.
Claim 6
Dependent Claim
72 words
A plasma processing apparatus according to Claim 1, wherein electrodes (34, 36; 45, 46) opposite to each other are arranged on the upper and lower sides in said plasma producing chamber (33 ), said cavity resonator is a ring-shaped resonator (31) provided around the ring side wall of the plasma producing chamber (33) and said slit means (43) is a ring-shaped slit (43a) attached to the side wall inside the resonator (31).
Claim 7
Dependent Claim
21 words
A plasma processing apparatus according to Claim 1, wherein said wall is made of a ceramic substrate or a quartz substrate.
Claim 8
Dependent Claim
54 words
A plasma processing apparatus according to Claim 1, wherein said wall is provided with gas supply holes (5d, 5e, 5dʹ, 5eʹ, 5dʺ, 5eʺ) for supplying the processing gas from its portions where the slits are not located into the plasma producing chamber (6), the gas supply holes being connected with gas supply means (9ʹ).
Claim 9
Dependent Claim
20 words
A plasma processing apparatus according to Claim 1, wherein said slit means (5ʹʹʹʹ) is formed by plating onto the wall.
Claim 10
Dependent Claim
29 words
A plasma processing apparatus according to Claim 8, wherein said slits means (5ʹʹʹʹ) is provided on the side of the cavity resonator with respect to said wall (Fig. 17).
Claim 11
Dependent Claim
55 words
A plasma processing apparatus according to Claim 1, wherein an electrode (7) on which the substrate (12) is placed is arranged in the plasma producing chamber, and a high frequency power supply (11) is connected between the slit means (5, 5ʹ 5ʺ, 5ʹʹʹ, 5ʹʹʹʹ, 55) and the electrode (7) on which the substrate is placed.
Claim 12
Dependent Claim
34 words
A plasma processing apparatus according to Claim 10, wherein a switch (61) for switching the high frequency power supply between the slit means and the electrode on which the substrate is placed is provided.
Claim 13
Dependent Claim
23 words
A plasma processing apparatus according to Claim 5, wherein further comprising means (37, 38) for forming a casp magnetic field on the electrodes
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.