EP0263711A2
Expired / Lapsed
EP
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Manufacturing method for thin-film semiconductor diode device
Assignee: Denso Corp
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Filing: 1987-10-08
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Granted: —
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Expires: 2007-10-08
Abstract
Abstract A structure and manufacturing method for a thin film semiconductor device consisting of a single diode or a plurality of diodes connected in series, the device being formed of at least one pair of mutually adjacent P-type (23a) and N-type (23b) regions formed in a layer of polycrystalline silicon (23) deposited on an insulating film (22) upon a substrate (21), to thereby define at least one PN junction. Each of the P-type regions and N-type regions is shaped as a rectangle, with opposite ends of each PN junction formed between these regions being respectively defined by two opposing sides of the polycrystalline silicon layer. Since each of the PN junctions is substantially rectilinear, an even distribution of current flow through each PN junction is attained, whereby a high resistance to destruction and an extremely stable value of reverse bias breakdown voltage are achieved.
Inventors
- 👤 Yukio 15 Aza Bishamon Tsuzuki
- 👤 Masami Yamaoka
- 👤 Hiroshi Muto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 22:41
CPC Classifications
H; H10; H10D; H10D86/00; H10D62/00; H10D62/40; H10D8/00; H10D88/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
76 words
A semiconductor device configured as a layer of polycrystalline silicon which is formed upon a predetermined region of an insulating film covering a substrate surface, with mutually adjacent P-type regions and N-type regions formed in said polycrystalline silicon layer, each of said regions being of rectangular shape, to thereby form at least one PN junction extending substantially rectilinearly, with respective ends of said PN junction being defined by two opposing sides of said polycrystalline silicon layer.
Claim 2
Dependent Claim
76 words
A semiconductor device configured as a layer of polycrystalline silicon which is formed upon a predetermined region of an insulating film covering a substrate surface, with mutually adjacent P-type regions and N-type regions formed in said polycrystalline silicon layer, each of said regions being of rectangular shape, to thereby form at least one PN junction extending substantially rectilinearly, with respective ends of said PN junction being defined by two opposing sides of said polycrystalline silicon layer.
Claim 3
Dependent Claim
27 words
A semiconductor device according to claim 1, comprising successively alternating ones of said P-type regions and N-type regions, forming a plurality of PN junctions connected in series.
Claim 4
Dependent Claim
37 words
A semiconductor device according to claim 1, further comprising a thermal oxidation film formed over at least a portion of a surface of said polycrystalline silicon layer in which said at least one PN junction is formed.
Claim 5
Dependent Claim
32 words
A semiconductor device according to claim 3, in which said said surface of said polycrystalline silicon layer is rendered substantially flat and smooth prior to formation of said thermal oxidation film thereon.
Claim 6
Dependent Claim
58 words
A semiconductor device according to claim 2, in which said polycrystalline silicon layer is formed with first and second mutually opposed sides disposed substantially mutually parallel, and in which first and second mutually opposed sides of each of said P-type regions and N-type regions are respectively defined by said first and second sides of said polycrystalline silicon layer.
Claim 7
Dependent Claim
115 words
A semiconductor device according to claim 5, in which said polycrystalline silicon layer is formed on said insulating film to have a substantially rectangular shape, and in which a first outermost region of said P-type regions and N-type regions has a third side thereof defined by a third side of said polycrystalline silicon layer and a second outermost region of said P-type regions and N-type regions disposed in opposition to said first outermost region has a third side thereof defined by a fourth side of said polycrystalline silicon layer, and in which a first terminal electrode is formed on said first outermost region and a second terminal electrode is formed on said second outermost region.
Claim 8
Dependent Claim
24 words
A semiconductor device according to claim 6, further comprising a plurality of electrodes formed to respectively connect alternately positioned ones of said PN junctions.
Claim 9
Independent Claim
171 words
A method of manufacturing a semiconductor device, comprising: a step of forming an insulating film upon a substrate; a step of forming a layer of polycrystalline silicon upon a predetermined region of said insulating film; a step of performing oxidation of a surface of said polycrystalline silicon layer to form a first thermal oxidation film; a step of removing said first thermal oxidation film; a step of again performing oxidation of said surface of said polycrystalline silicon layer to form a second thermal oxidation film; a step of performing selective implantation of impurities in predetermined regions of said polycrystalline silicon layer such as to form at least one P-type region and at least one N-type region disposed mutually adjacent, each of said P-type region and N-type region being of rectangular shape, to thereby form at least one PN junction having opposite ends thereof defined by two opposing sides of said polycrystalline silicon layer and; a step of forming connecting leads of predetermined shape upon predetermined regions of said polycrystalline silicon layer.
Claim 10
Independent Claim
171 words
A method of manufacturing a semiconductor device, comprising: a step of forming an insulating film upon a substrate; a step of forming a layer of polycrystalline silicon upon a predetermined region of said insulating film; a step of performing oxidation of a surface of said polycrystalline silicon layer to form a first thermal oxidation film; a step of removing said first thermal oxidation film; a step of again performing oxidation of said surface of said polycrystalline silicon layer to form a second thermal oxidation film; a step of performing selective implantation of impurities in predetermined regions of said polycrystalline silicon layer such as to form at least one P-type region and at least one N-type region disposed mutually adjacent, each of said P-type region and N-type region being of rectangular shape, to thereby form at least one PN junction having opposite ends thereof defined by two opposing sides of said polycrystalline silicon layer and; a step of forming connecting leads of predetermined shape upon predetermined regions of said polycrystalline silicon layer.
Claim 11
Dependent Claim
32 words
A manufacturing method according to claim 8, in which said step of forming said first thermal oxidation film is performed at a temperature which is in the range 900 to 1200° C.
Claim 12
Dependent Claim
29 words
A manufacturing method according to claim 8, further in which after forming said second thermal oxidation films, a step of thermal processing in an inert gas atmosphere is executed.
Claim 13
Dependent Claim
30 words
A manufacturing method according to claim 10, in which said thermal processing is performed at a temperature of at least 1100° C, for a duration of at least 15 minutes.
Claim 14
Dependent Claim
38 words
A manufacturing method according to claim 8, in which after said step of forming at least one PN junction, thermal processing is executed at a temperature in the range 1000 to 1100° C in an inert gas atmosphere.
Claim 15
Dependent Claim
26 words
A manufacturing method according to claim 8, in which said polycrystalline silicon layer is formed in a substantially rectangular shape, in said step of formation thereof.
References Cited (Backward Citations)
No citation records indexed.
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