EP0262665A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
CCD Area image sensor operable in both of line-sequential and interlace scannings and a method for operating the same
Assignee: NEC Corp
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Filing: 1987-09-30
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Granted: —
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Expires: 2007-09-30
Abstract
Abstract A CCD area image sensor includes, on a single semiconductor chip, a matrix of imaging elements, a plurality of vertical shift registers formed in parallel with rows of the matrix, a first horizontal shift register formed on one side of the matrix, a plurality of lines of CCD memories formed on another side of the matrix opposite to the one side, a second horizontal shift register formed on the same side of the matrix as the lines of CCD memories and first and second charge detectors formed at ends of the first and second horizontal shift registers. The method for operating the CCD area image sensor to produce signals with interlace and line sequential scannings is also described.
Inventors
- 👤 Ikuo Akiyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 02:39
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/40; H04N25/42; H04N25/44; H04N25/441; H04N25/70; H04N25/71; H04N25/73; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
208 words
A CCD area image sensor formed on a single semiconductor chip and comprising: a plurality of imaging elements arranged in rows and columns to form a matrix, said imaging elements accumulating charges in response to light incident thereon; a plurality of vertical shift registers each formed along and in parallel with each of said columns of said imaging elements; a first horizontal shift register formed outside said matrix so as to receive charges from said vertical shift registers; a plurality of lines of memories formed outside said matrix, each of said lines being formed in a direction of said columns so as to store charges transferred from said vertical shift registers and to shift said stored charges to one end thereof; a second horizontal shift register formed to receive the shifted charges from said one end of each of said lines of memories; a first charge detector formed at an end portion of said first horizontal shift register to produce a first electrical signal in response to charges shifted through said first horizontal shift register; and a second charge detector formed at an end portion of said second horizontal shift register to produce a second electrical signal in response to charges shifted through said second horizontal shift register.
Claim 2
Dependent Claim
208 words
A CCD area image sensor formed on a single semiconductor chip and comprising: a plurality of imaging elements arranged in rows and columns to form a matrix, said imaging elements accumulating charges in response to light incident thereon; a plurality of vertical shift registers each formed along and in parallel with each of said columns of said imaging elements; a first horizontal shift register formed outside said matrix so as to receive charges from said vertical shift registers; a plurality of lines of memories formed outside said matrix, each of said lines being formed in a direction of said columns so as to store charges transferred from said vertical shift registers and to shift said stored charges to one end thereof; a second horizontal shift register formed to receive the shifted charges from said one end of each of said lines of memories; a first charge detector formed at an end portion of said first horizontal shift register to produce a first electrical signal in response to charges shifted through said first horizontal shift register; and a second charge detector formed at an end portion of said second horizontal shift register to produce a second electrical signal in response to charges shifted through said second horizontal shift register.
Claim 3
Dependent Claim
20 words
The CCD area image sensor as claimed in claim 1, wherein said vertical shift registers shift charges in different directions.
Claim 4
Dependent Claim
23 words
The CCD area image sensor as claimed in claim 2, further comprising a switch for alternately outputting said first and second electrical signals.
Claim 5
Dependent Claim
123 words
The CCD area image sensor as claimed in claim 3, wherein said charges accumulated in said imaging elements of every other of said rows are transferred through said vertical shift registers to be stored in said lines of memories and, thereafter, to be transferred to said second horizontal shift register, while said charges accumulated in said imaging elements of remaining rows are transferred to said first horizontal shift register, said charges transferred to one of said first and second horizontal shift registers being shifted through said one of said first and second horizontal shift registers after said charges transferred to the other of said first and second horizontal shift registers are shifted through said other of said first and second horizontal shift registers.
Claim 6
Independent Claim
290 words
A method for operating a CCD area image sensor comprising: a plurality of imaging elements arranged in rows and columns to form a matrix, said imaging elements accumulating charges in response to light incident thereon; a plurality of vertical shift registers formed respectively in parallel with said columns of said imaging elements; a first horizontal shift register formed outside said matrix; a second horizontal shift register formed to receive charges from said lines of memories; a plurality of lines of memories formed outside said matrix to receive charges from said vertical shift registers; a first charge-voltage converter converting charges shifted through said first horizontal shift register into a first electrical signal; a second charge-voltage converter converting charges shifted through said second horizontal shift register into a second electrical signal; and a switch selectively outputting said first and second electrical signals, said method comprising steps of; transferring first charges accumulated in said imaging elements of every other of said rows to said vertical shift registers; shifting said first charges through said vertical shift registers to store them in said lines of memories; transferring second charges accumulated in said imaging elements of the remaining rows to said vertical shift registers; transferring a part of said first charges and a part of said second charges to said second and first horizontal shift registers, respectively; and shifting said transferred charges through one of said first and second horizontal shift registers to output as an electrical signal through one of said first and second charge-voltage converters and said switch, followed by shifting said transferred charges through the other of said first and second horizontal shift registers to output as another electrical signal through the other of said first and second charge-voltage converters and said switch.
Claim 7
Independent Claim
290 words
A method for operating a CCD area image sensor comprising: a plurality of imaging elements arranged in rows and columns to form a matrix, said imaging elements accumulating charges in response to light incident thereon; a plurality of vertical shift registers formed respectively in parallel with said columns of said imaging elements; a first horizontal shift register formed outside said matrix; a second horizontal shift register formed to receive charges from said lines of memories; a plurality of lines of memories formed outside said matrix to receive charges from said vertical shift registers; a first charge-voltage converter converting charges shifted through said first horizontal shift register into a first electrical signal; a second charge-voltage converter converting charges shifted through said second horizontal shift register into a second electrical signal; and a switch selectively outputting said first and second electrical signals, said method comprising steps of; transferring first charges accumulated in said imaging elements of every other of said rows to said vertical shift registers; shifting said first charges through said vertical shift registers to store them in said lines of memories; transferring second charges accumulated in said imaging elements of the remaining rows to said vertical shift registers; transferring a part of said first charges and a part of said second charges to said second and first horizontal shift registers, respectively; and shifting said transferred charges through one of said first and second horizontal shift registers to output as an electrical signal through one of said first and second charge-voltage converters and said switch, followed by shifting said transferred charges through the other of said first and second horizontal shift registers to output as another electrical signal through the other of said first and second charge-voltage converters and said switch.
Claim 8
Dependent Claim
131 words
A CCD area image sensor comprising: a semiconductor chip; a structure of CCD imaging sensor for producing a signal for a interlace scanning system in response to light incident thereon, said structure including a matrix of imaging elements, a plurality of vertical shift registers formed in parallel with respective rows in said matrix, a first horizontal shift register formed on one side of said matrix and a first charge detector formed at one end of said first horizontal shift register; a plurality of lines of memories formed on another side of said matrix opposite to said one side; a second horizontal shift register formed on the same side of said matrix as said lines of memories; and a second charge detector formed at one end of said second horizontal shift register.
Claim 9
Dependent Claim
131 words
A CCD area image sensor comprising: a semiconductor chip; a structure of CCD imaging sensor for producing a signal for a interlace scanning system in response to light incident thereon, said structure including a matrix of imaging elements, a plurality of vertical shift registers formed in parallel with respective rows in said matrix, a first horizontal shift register formed on one side of said matrix and a first charge detector formed at one end of said first horizontal shift register; a plurality of lines of memories formed on another side of said matrix opposite to said one side; a second horizontal shift register formed on the same side of said matrix as said lines of memories; and a second charge detector formed at one end of said second horizontal shift register.
Claim 10
Dependent Claim
26 words
The CCD area image sensor as claimed in claim 6, wherein said second horizontal shift register is disposed between said lines of memories and said matrix.
Claim 11
Dependent Claim
26 words
The CCD area image sensor as claimed in claim 6, wherein said lines of memories are disposed between said second horizontal shift register and said matrix.
References Cited (Backward Citations)
No citation records indexed.
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