Patent US3345295A successfully refreshed from Google Patents.
EP0260955A2
Expired / Lapsed
EP
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Photoelectric converter
Assignee: Canon Inc
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Filing: 1987-09-16
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Granted: —
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Expires: 2007-09-16
Abstract
Abstract A photoelectric converter comprises a semiconductor transistor having a main electrode region of one conductivity type semiconductor and a control electrode region of an opposite conductivity type semiconductor, and a capacitor for controlling a potential of the floating control electorde region. Carriers generated by a light are stored in the control electrode region by controlling the potential of the control electrode area through the capacitor. The stored voltage is read and stored carriers are refreshed. On an unnucleation surface (S NDS ) of said light transmissive substrate, a nucleation surface (S NDL ) of a heterogeneous material having a sufficiently higher nucleation density than that of the material of unnucleation surface and a sufficiently small area to permit growth of single nuclear of the deposite surface is formed. A single crystal region is grown around the single nuclear formed in the nucleation surface (S NDL ). And a photoelectric conversion cell is formed is the single crystal region.
Inventors
- 👤 Shiro Arikawa
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 01:31
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H10F77/334; H10F30/00; H10F30/20; H10F30/21; H10F30/24; H10F30/245; H10F30/28; H10F30/282; H10F71/00; H10F71/121; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/152
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
162 words
A photoelectric converter comprising a semiconductor transistor having a main electrode region of one conductivity type semiconductor and a control electrode region of an opposite conductivity type semiconductor, and a capacitor for controlling a potential of the floating control electrode region, wherein carriers generated by a light are stored in said control electrode region by controlling the potential of said control electrode area through said capacitor, a stored voltage is read and stored carriers are refreshed, characterized by that, on an unnucleation surface (S NDS ) of said light transmissive substrate, a nucleation surface (S NDL ) of a heterogeneous material having a sufficiently higher nucleation density than that of the material of unnucleation surface and a sufficiently small area to permit growth of single unclear of the deposit material is formed, a single crystal region is grown around the single nuclear formed in the nucleation surface (S NDL ), and a photoelectric conversion cell is formed in the single crystal region.
Claim 2
Dependent Claim
162 words
A photoelectric converter comprising a semiconductor transistor having a main electrode region of one conductivity type semiconductor and a control electrode region of an opposite conductivity type semiconductor, and a capacitor for controlling a potential of the floating control electrode region, wherein carriers generated by a light are stored in said control electrode region by controlling the potential of said control electrode area through said capacitor, a stored voltage is read and stored carriers are refreshed, characterized by that, on an unnucleation surface (S NDS ) of said light transmissive substrate, a nucleation surface (S NDL ) of a heterogeneous material having a sufficiently higher nucleation density than that of the material of unnucleation surface and a sufficiently small area to permit growth of single unclear of the deposit material is formed, a single crystal region is grown around the single nuclear formed in the nucleation surface (S NDL ), and a photoelectric conversion cell is formed in the single crystal region.
Claim 3
Dependent Claim
29 words
A photoelectric converter according to Claim 1 wherein the other side of said light transmissive substrate having nucleation surface is machined to collect light into the single crystal region.
Claim 4
Dependent Claim
35 words
A photoelectric converter according to Claim 1 wherein a single-layer or multi-layer light transmissive layer having a different optical property is formed on the other side of said light transmissive substrate having the nucleation surface.
Claim 5
Dependent Claim
24 words
A photoelectric converter according to Claim 1 wherein at least one opaque layer is formed in a recess formed in said light transmissive substrate.
Claim 6
Independent Claim
53 words
A method of making a semiconductor device comprising the steps of providing on a substrate in a predetermined region thereof a nucleation surface adapted and arranged to permit the formation of only a single nucleus in the region, forming the single nucleus, and growing a single crystal in the region around the nucleus.
Claim 7
Independent Claim
53 words
A method of making a semiconductor device comprising the steps of providing on a substrate in a predetermined region thereof a nucleation surface adapted and arranged to permit the formation of only a single nucleus in the region, forming the single nucleus, and growing a single crystal in the region around the nucleus.
Claim 8
Dependent Claim
10 words
A semiconductor device made by the method of claim 5.
References Cited (Backward Citations)
No citation records indexed.
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