Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
90 words
A method for growing a single crystal thin film of an element semiconductor, said method comprising repeating the successive operations of feeding a single kind of gas containing said element semiconductor as a component element onto a substrate heated in a growth chamber for a given period of time and then exhausting said gas in the growth chamber for a given period of time under controlled operating conditions and thereby growing said single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer.
Claim 2
Independent Claim
90 words
A method for growing a single crystal thin film of an element semiconductor, said method comprising repeating the successive operations of feeding a single kind of gas containing said element semiconductor as a component element onto a substrate heated in a growth chamber for a given period of time and then exhausting said gas in the growth chamber for a given period of time under controlled operating conditions and thereby growing said single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer.
Claim 3
Dependent Claim
20 words
A method as claimed in Claim 1 wherein repetition of said successive operations is carried out under different operating conditions.
Claim 4
Dependent Claim
35 words
A method as claimed in Claim 1 wherein said operating conditions are controlled with respect to the pressure inside said growth chamber, the heating temperature of said substrate and the flow rate of said gas.
Claim 5
Dependent Claim
35 words
A method as claimed in Claim 2 wherein said operating conditions are controlled with respect to the pressure inside said growth chamber, the heating temperature of said substrate and the flow rate of said gas.
Claim 6
Dependent Claim
20 words
A method as claimed in Claim 1 wherein said gas is any one of SiH₂Cl₂, SiHCl₃, SiCl₄, SiH₄ and Si₂H₆.
Claim 7
Independent Claim
61 words
A method for growing a single crystal thin film of an element semiconductor, said method comprising continuously feeding a single kind of gas containing said element semiconductor as a component element onto a substrate heated in a growth chamber for a given period of time, and thereby growing said single crystal thin film of said element semiconductor in a desired thickness.
Claim 8
Independent Claim
61 words
A method for growing a single crystal thin film of an element semiconductor, said method comprising continuously feeding a single kind of gas containing said element semiconductor as a component element onto a substrate heated in a growth chamber for a given period of time, and thereby growing said single crystal thin film of said element semiconductor in a desired thickness.
Claim 9
Dependent Claim
35 words
A method as claimed in Claim 6 wherein said operating conditions are controlled with respect to the pressure inside said growth chamber, the heating temperature of said substrate and the flow rate of said gas.
Claim 10
Dependent Claim
20 words
A method as claimed in Claim 6 wherein said gas is any one of SiH₂Cl₂, SiHCl₃, SiCl₄, SiH₄ and Si₂H₆.