EP0258148A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Modification of properties of p-type dopants with other p-type dopants
Assignee: Fairchild Semiconductor Corp
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Filing: 1987-08-25
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Granted: —
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Expires: 2007-08-25
Abstract
Abstract One p-type dopant is implanted into a substrate to modify the diffusion characteristics of another p-type dopant implanted into the substrate. As an example, gallium is diffused into a p-type region along with boron to confine the diffusion of the boron, and thereby produce smaller device regions in silicon. Along with the confined volume, the resulting regions exhibit electrical activity that is greater than the simple additive behavior of boron and gallium acting alone.
Inventors
- 👤 Sheldon Aronowitz
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 20:39
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/21; H10P30/212; H10P30/28; H10P32/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
64 words
A method of forming a p-type region in a monolithic integrated circuit device, comprising the steps of: implanting ions of a first p-type impurity into a predetermined region on a semiconductor substrate; implanting ions of a second p-type impurity different from said first p-type impurity into said region; and annealing said substrate to cause both of said impurities to diffuse into said substrate together.
Claim 2
Independent Claim
64 words
A method of forming a p-type region in a monolithic integrated circuit device, comprising the steps of: implanting ions of a first p-type impurity into a predetermined region on a semiconductor substrate; implanting ions of a second p-type impurity different from said first p-type impurity into said region; and annealing said substrate to cause both of said impurities to diffuse into said substrate together.
Claim 3
Dependent Claim
36 words
The method of claim 1 wherein said implanting steps are carried out at respective power levels which cause the peak concentration of ions to be at about the same depth in the substrate for both impurities.
Claim 4
Dependent Claim
33 words
The method of claim 1 wherein the area of the region into which said first impurity is implanted is smaller than the area of the region into which said second impurity is implanted.
Claim 5
Dependent Claim
25 words
The method of claim 1 wherein each of said first and second impurities is selected from the group consisting of boron, aluminum, gallium and indium.
Claim 6
Dependent Claim
63 words
In the manufacture of a monolithic integrated circuit device in which a p-n junction is formed to provide desired electrical characteristics, a method of modifying the characteristics of a p-type region adjacent said junction comprising the step of simultaneously diffusing two different p- type impurities into said region so that interstitial ions of both of said impurities attract one another in said region.
Claim 7
Dependent Claim
63 words
In the manufacture of a monolithic integrated circuit device in which a p-n junction is formed to provide desired electrical characteristics, a method of modifying the characteristics of a p-type region adjacent said junction comprising the step of simultaneously diffusing two different p- type impurities into said region so that interstitial ions of both of said impurities attract one another in said region.
Claim 8
Dependent Claim
25 words
The method of claim 5 wherein said diffusion step comprises the steps of implanting ions of each of said impurities and simultaneously annealing the implants.
Claim 9
Dependent Claim
8 words
The product of the process of claim 5.
Claim 10
Dependent Claim
8 words
The product of the process of claim 6.
Claim 11
Dependent Claim
43 words
A monolithic integrated circuit device having a p-n junction formed between an n-type region that is doped with at least one donor impurity and p-type region that is doped with two different acceptor impurities each of which are distributed throughout said p-type region.
Claim 12
Dependent Claim
43 words
A monolithic integrated circuit device having a p-n junction formed between an n-type region that is doped with at least one donor impurity and p-type region that is doped with two different acceptor impurities each of which are distributed throughout said p-type region.
Claim 13
Dependent Claim
22 words
The device of claim 9 wherein each of said acceptor impurities is selected from the group of boron, aluminum, gallium and indium.
Claim 14
Dependent Claim
40 words
An MOS field effect transistor, comprising: an n-type semiconductor substrate; and p-type source and drain regions formed in said substrate, each of said source and drain regions comprising a semiconductor that is doped with atoms of two different acceptor impurities.
Claim 15
Dependent Claim
40 words
An MOS field effect transistor, comprising: an n-type semiconductor substrate; and p-type source and drain regions formed in said substrate, each of said source and drain regions comprising a semiconductor that is doped with atoms of two different acceptor impurities.
Claim 16
Dependent Claim
23 words
The transistor of claim 11 wherein each of said acceptor impurities is selected from the group consisting of boron, aluminum, gallium and indium.
References Cited (Backward Citations)
No citation records indexed.
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