EP0253201A2
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EP
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Structure containing hydrogenated amorphous silicon and process
Assignee: International Business Machines Corp
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Filing: 1987-06-30
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Granted: —
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Expires: 2007-06-30
Abstract
Abstract A structure containing a substrate having a first hydrogenated amorphous silicon layer thereon and a second hydrogenated amorphous silicon layer located above the first layer. The two hydrogenated amorphous silicon layers differ from each other in the concentration of hydrogen contained therein. In addition, a process for fabricating such a structure is provided.
Inventors
- 👤 Ivan Haller
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 20:42
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
62 words
Structure comprising: a substrate having at least one major surface area; a first layer of hydrogenated amorphous silicon above said major surface area wherein said first layer has a first concentration of hydrogen incorporated therein; a second layer of hydrogenated amorphous silicon located above said first layer and having a second concentration of hydrogen incorporated therein that differs from said first concentration.
Claim 2
Dependent Claim
62 words
Structure comprising: a substrate having at least one major surface area; a first layer of hydrogenated amorphous silicon above said major surface area wherein said first layer has a first concentration of hydrogen incorporated therein; a second layer of hydrogenated amorphous silicon located above said first layer and having a second concentration of hydrogen incorporated therein that differs from said first concentration.
Claim 3
Dependent Claim
17 words
Structure of claim 1 wherein said second layer has a higher hydrogen concentration than said first layer.
Claim 4
Dependent Claim
20 words
Structure of claims 1 and 2 wherein the second layer is patterned and wherein said first layer is not patterned.
Claim 5
Dependent Claim
14 words
Structure of claim 1 wherein the layer having the higher hydrogen concentration is doped.
Claim 6
Dependent Claim
101 words
Process for fabricating a structure that comprises: providing a substrate having at least one major surface area; providing a first layer of hydrogenated amorphous silicon above said major surface area wherein said first layer of amorphous silicon has a first concentration of hydrogen incorporated therein; providing a second layer of hydrogenated amorphous silicon above said first layer wherein said second layer has a second concentration of hydrogen incorporated therein that differs from said first concentration; and providing a vertically differentiated pattern by selectively etching the layer of hydrogenated amorphous silicon having the higher hydrogen concentration of the first and second layers.
Claim 7
Dependent Claim
101 words
Process for fabricating a structure that comprises: providing a substrate having at least one major surface area; providing a first layer of hydrogenated amorphous silicon above said major surface area wherein said first layer of amorphous silicon has a first concentration of hydrogen incorporated therein; providing a second layer of hydrogenated amorphous silicon above said first layer wherein said second layer has a second concentration of hydrogen incorporated therein that differs from said first concentration; and providing a vertically differentiated pattern by selectively etching the layer of hydrogenated amorphous silicon having the higher hydrogen concentration of the first and second layers.
Claim 8
Dependent Claim
17 words
Process of claim 5 wherein the second layer has a higher hydrogen concentration than the first layer.
Claim 9
Dependent Claim
35 words
Process of claim 5 wherein the second layer is deposited at a temperature lower than the temperature at which the first layer is deposited, thereby providing a higher concentration of hydrogen in said second layer.
Claim 10
Dependent Claim
26 words
Process of claim 5 wherein the layer having the higher hydrogen concentration is obtained by increasing the pressure of a plasma deposition to provide the layers.
Claim 11
Dependent Claim
42 words
Process of claim 5 wherein the first layer is provided by plasma deposition employing a temperature of about 225°C to about 325°C and the second layer is provided by the plasma deposition employing a temperature of about room temperature to about 200°C.
Claim 12
Dependent Claim
15 words
Process of claim 5 wherein the etching is carried out by a strongly alkaline solution.
Claim 13
Dependent Claim
18 words
Process of claim 10 wherein the etching is carried out employing a potassium hydroxide or sodium hydroxide solution.
Claim 14
Dependent Claim
25 words
Process of claim 5 wherein the layer having the higher hydrogen concentration also is doped and the layer with the lower hydrogen concentration is undoped.
References Cited (Backward Citations)
No citation records indexed.
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