EP0252679A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having two electrodes with an insulating film between them
Assignee: Seiko Instruments Inc
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Filing: 1987-07-01
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Granted: —
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Expires: 2007-07-01
Abstract
Abstract A semiconductor device comprising first and second electrodes (3,5) with an insulation film (4) therebetween which has been formed by a chemical vapour deposition process characterised in that the insulation film (4) is a silicon oxide film, the material of the first electrode (3) comprising polycrystalline silicon and at least one metal silicide.
Inventors
- 👤 Takashi Hosaka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 23:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10D; H10D1/00; H10D1/60; H10D1/68; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10D64/68; H10D64/691; H10D64/693
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
53 words
A semiconductor device comprising first and second electrodes (3,5) with an insulation film (4) therebetween which has been formed by a chemical vapour deposition process characterised in that the insulation film (4) is a silicon oxide film, the material of the first electrode (3) comprising polycrystalline silicon and at least one metal silicide.
Claim 2
Dependent Claim
53 words
A semiconductor device comprising first and second electrodes (3,5) with an insulation film (4) therebetween which has been formed by a chemical vapour deposition process characterised in that the insulation film (4) is a silicon oxide film, the material of the first electrode (3) comprising polycrystalline silicon and at least one metal silicide.
Claim 3
Dependent Claim
20 words
A semiconductor device as claimed in claim 1 characterised in that the first electrode (3) has a plurality of layers.
Claim 4
Dependent Claim
26 words
A semiconductor device as claimed in claim 2 characterised in that the first electrode (3) comprises a metal silicide membrane laminated to a polycrystalline silicon membrane.
Claim 5
Dependent Claim
25 words
A semiconductor device as claimed in any preceding claim characterised in that the thickness of the said insulator film (4) does not exceed 1000 Å.
Claim 6
Dependent Claim
38 words
A semiconductor device as claimed in any preceding claim characterised in that the silicon oxide insulation film (4) has been formed by a chemical gas phase reaction using a dichlorosilane (SiH₂Cℓ₂ gas and a nitrous oxide (N₂O) gas.
Claim 7
Dependent Claim
32 words
A semiconductor device as claimed in claim 5 characterised in that the chemical gas phase reaction has been carried out by arranging that the relative N₂O/SiH₂Cℓ₂ flow rate is at least 5.
Claim 8
Dependent Claim
43 words
A semiconductor device as claimed in claim 5 or 6 characterised in that the said reaction has been effected under a reduced pressure in the range of 0.1 mbar to 2 mbar and a temperature in the range of 700°C to 950° C.
Claim 9
Dependent Claim
21 words
A semiconductor device as claimed in any preceding claim characterised in that the said first and second electrodes (3,5) incorporate wiring.
Claim 10
Dependent Claim
25 words
A semiconductor device as claimed in any preceding claim characterised in that the first electrode (3) is mounted directly or indirectly on a substrate (1).
Claim 11
Dependent Claim
22 words
A semiconductor device as claimed in any preceding claim characterised in that the device is a non-volatile memory having a floating gate.
Claim 12
Independent Claim
58 words
A method of making a semiconductor device which comprises first and second electrodes (3,5) with an insulation film (4) therebetween which has been formed by a chemical vacuum deposition process characterised in that the insulation film (4) is a silicon oxide film, the material of the first electrode (3) comprising polycrystalline silicon and at least one metal silicide.
Claim 13
Independent Claim
58 words
A method of making a semiconductor device which comprises first and second electrodes (3,5) with an insulation film (4) therebetween which has been formed by a chemical vacuum deposition process characterised in that the insulation film (4) is a silicon oxide film, the material of the first electrode (3) comprising polycrystalline silicon and at least one metal silicide.
Claim 14
Dependent Claim
36 words
A semiconductor device comprising a polycide electrode and wiring composed of two layers of polycrystalline silicon and metal silicide, and an insulation film formed on the polycide electrode and wiring using a chemical vapor deposition process.
Claim 15
Dependent Claim
36 words
A semiconductor device comprising a polycide electrode and wiring composed of two layers of polycrystalline silicon and metal silicide, and an insulation film formed on the polycide electrode and wiring using a chemical vapor deposition process.
Claim 16
Dependent Claim
50 words
A semiconductor device comprising a lower electrode layer using polycide composed of two layers of polycrystalline silicon and metal silicide, an insulation film formed on said lower electrode layer using said polycide by means of a chemical vapor deposition process, and an upper electrode layer formed on said insulation film.
Claim 17
Dependent Claim
50 words
A semiconductor device comprising a lower electrode layer using polycide composed of two layers of polycrystalline silicon and metal silicide, an insulation film formed on said lower electrode layer using said polycide by means of a chemical vapor deposition process, and an upper electrode layer formed on said insulation film.
References Cited (Backward Citations)
No citation records indexed.
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