Patent US4200352A successfully refreshed from Google Patents.
EP0249769A2
Expired / Lapsed
EP
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Patterned image and process for forming a patterned image
Assignee: International Business Machines Corp
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Filing: 1987-05-22
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Granted: —
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Expires: 2007-05-22
Abstract
Abstract The patterned image includes on a substrate, a patterned image of a first resist material and patterned image of a second and different resist material on said first resist material. Said first material contains reactive hydrogen functional groups. The surface layer of the delineated and uncovered first resist material is reacted with a multifunctional organometallic material containing functional groups that are reactive with the functional groups of said first material. The method comprises: providing a first resist material on a substrate wherein said first material contains reactive hydrogen functional groups; providing a second and different resist material on top of said first resist material; selectively exposing said second resist material and developing said second and different resist material to form a resist mask; exposing said first resist material through the said resist mask and developing said first resist material; and reacting the surface layer of the exposed and uncovered first resist material with said organometallic material.
Inventors
- 👤 Burn Jeng Lin
- 👤 Bea-Jane Lin Yang
- 👤 Jer-Ming Yang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 04:18
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/38; G03F7/40; G03F7/405
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
93 words
A patterned image comprising a substrate, a patterned image of a first resist polymeric material on said substrate wherein said polymeric material contains at least one of reactive hydrogen functional groups or reactive hydrogen precursor groups wherein at least the surface layer of the exposed and uncovered first resist polymeric material being reacted with a multifunctional organometallic material containing at least two functional groups that are reactive with the functional groups of said polymeric material; and optionally a patterned image of a second and different resist material on said first resist polymeric material.
Claim 2
Dependent Claim
93 words
A patterned image comprising a substrate, a patterned image of a first resist polymeric material on said substrate wherein said polymeric material contains at least one of reactive hydrogen functional groups or reactive hydrogen precursor groups wherein at least the surface layer of the exposed and uncovered first resist polymeric material being reacted with a multifunctional organometallic material containing at least two functional groups that are reactive with the functional groups of said polymeric material; and optionally a patterned image of a second and different resist material on said first resist polymeric material.
Claim 3
Dependent Claim
16 words
The image of claim 1 wherein said organometallic material is an organosilicon material, like 3-aminopropyltriethoxy silane.
Claim 4
Dependent Claim
20 words
The image according to claim 1 or 2 wherein said first resist is about 1 to about 4 µm thick.
Claim 5
Dependent Claim
23 words
The image according to any one of claims 1 to 3 wherein said second resist is about 0.5 to about 2 µm thick.
Claim 6
Dependent Claim
40 words
The image according to any one of claims 1 to 4 wherein about 10 to about 200 nm and preferably about 20 to about 100 nm into the surface layer of the first resist is reacted with said organometallic material.
Claim 7
Dependent Claim
27 words
The image according to any one of claims 1 to 5 wherein said first resist polymeric material is a terpolymer of methylmethacrylate, methacrylic acid and methacrylic anhydride.
Claim 8
Dependent Claim
26 words
The image according to any one of claims 1 to 6 wherein second resist is a phenolic formaldehyde, like a cresol formaldehyde, positive or negative resist.
Claim 9
Independent Claim
182 words
A method for providing a patterned image which comprises: a. providing a first resist polymeric material on a substrate wherein said polymeric material contains at least one of reactive hydrogen functional groups or reactive hydrogen precursor groups; b. providing a second and different resist material on said first resist polymeric material with said first resist polymeric material being intermediate said second and different resist material and said substrate; c. exposing said second and different resist material to imaging radiation and developing said second and different resist material, thereby providing a resist image mask; d. exposing said first resist polymeric material to imaging radiation through the said resist image mask; e. then developing said first resist polymeric material and optionally removing said second resist layer; f. then reacting at least the surface layer of the exposed and uncovered first resist polymeric material with a multifunctional organometallic material containing at least two functional groups that are reactive with the functional groups of said polymeric material; and g. optionally removing said first polymeric material after it has served as a mask for its desired purpose.
Claim 10
Independent Claim
182 words
A method for providing a patterned image which comprises: a. providing a first resist polymeric material on a substrate wherein said polymeric material contains at least one of reactive hydrogen functional groups or reactive hydrogen precursor groups; b. providing a second and different resist material on said first resist polymeric material with said first resist polymeric material being intermediate said second and different resist material and said substrate; c. exposing said second and different resist material to imaging radiation and developing said second and different resist material, thereby providing a resist image mask; d. exposing said first resist polymeric material to imaging radiation through the said resist image mask; e. then developing said first resist polymeric material and optionally removing said second resist layer; f. then reacting at least the surface layer of the exposed and uncovered first resist polymeric material with a multifunctional organometallic material containing at least two functional groups that are reactive with the functional groups of said polymeric material; and g. optionally removing said first polymeric material after it has served as a mask for its desired purpose.
Claim 11
Dependent Claim
39 words
The method of claim 8 which further includes hardening said second and different resist material after developing such and optionally applying a layer of polymethylmethacrylate over the developed material and prior to exposing the first resist to imaging radiation.
Claim 12
Dependent Claim
34 words
Method according to claim 8 or 9 wherein said organometallic material is in the gas or liquid phase and if in the liquid phase being the material per se or dissolved in a liquid.
Claim 13
Independent Claim
30 words
The method according to any one of claims 8 to 10 wherein a patterned image having the features disclosed in one or several of claims 2 to 7 is formed.
References Cited (Backward Citations)
No citation records indexed.
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