EP0249457A2
Expired / Lapsed
EP
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Method for formation of patterns
Assignee: Panasonic Holdings Corp
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Filing: 1987-06-10
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Granted: —
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Expires: 2007-06-10
Abstract
Abstract Disclosed is a method for formation of a resist pattern used in the photo lithography steps for preparing semi-conductor devices and more particularly, a method for formation of a superfine resist pattern which comprises selectively exposing a resist surface of a photosensitive high molecular film to light to modify the exposed area to a hydrophilic property, chemically adsorbing a Si-containing reagent selectively to the modified area and then subjecting to O₂ RIE using the Si-adsorbed film as a mask. The method is also characterized by enabling to formation of a finer pattern formation using a monomolecular film or monomolecular built-up film formed by the LB method or the chemical adsorption method in place of the resist described above.
Inventors
- 👤 Kazufumi Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 04:30
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/265; B; B82; B82Y; B82Y30/00; B82Y10/00; B82Y40/00
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
113 words
A method for formation of a pattern which comprises: a step of forming on an optional base plate an energy-sensitive thin film containing a sensitive group capable of causing a chemical reaction by energy beam, subjecting said sensitive thin film to pattern exposure to said energy beam to react the sensitive group pattern-wise and change the sensitive group to a hydrophilic or hydrophobic group selectively, a step of chemically adsorbing a silicon-containing reagent selectively to an area which has been changed to the hydrophilic group or to an area which has been changed to the hydrophobic group, and a step of performing a dry etching treatment, thereby to form a thin film pattern.
Claim 2
Independent Claim
113 words
A method for formation of a pattern which comprises: a step of forming on an optional base plate an energy-sensitive thin film containing a sensitive group capable of causing a chemical reaction by energy beam, subjecting said sensitive thin film to pattern exposure to said energy beam to react the sensitive group pattern-wise and change the sensitive group to a hydrophilic or hydrophobic group selectively, a step of chemically adsorbing a silicon-containing reagent selectively to an area which has been changed to the hydrophilic group or to an area which has been changed to the hydrophobic group, and a step of performing a dry etching treatment, thereby to form a thin film pattern.
Claim 3
Dependent Claim
31 words
The method for formation of a pattern as claimed in claim 1 wherein a linear siloxane molecule having bound chlorine to at least one end thereof is used as said reagent.
Claim 4
Dependent Claim
27 words
The method for formation of a pattern as claimed in claim 1 wherein said sensitive thin film is composed of novolak derivative positive resist, poly-formyloxystyrene or chloromethylstyrene.
Claim 5
Dependent Claim
29 words
The method for formation of a pattern as claimed in claim 1 wherein the Langmuir-Brojet method or the chemical adsorption method is used for forming said sensitive thin film.
Claim 6
Dependent Claim
35 words
The method for formation of a pattern as claimed in claim 1 wherein a second sensitive group is added to the surface of a monomolecular film at the step of selectively forming said monomolecular film.
Claim 7
Dependent Claim
59 words
The method for formation of a pattern as claimed in claim 1 wherein said sensitive thin film is a film containing a hydrophilic group or a trichlorosilane group at one end of a linear hydrocarbon and containing at the other end thereof a sensitive group capable of causing a chemical reaction by energy beam to produce a hydrophilic group.
Claim 8
Dependent Claim
24 words
The method for formation of a pattern as claimed in claim 6 wherein said sensitive group is a naphthoquinone-diazide group or a benzoquinone-diazide group.
Claim 9
Independent Claim
100 words
A method for formation of a pattern which comprises: a step of forming on an optional base plate an energy-sensitive thin film comprising a monomolecular film or a mononolecular built-up film containing a first sensitive group capable of causing a chemical reaction by energy beam to produce a hydrophilic group, a step of subjecting said sensitive thin film to pattern exposure to said energy beam to change said first sensitive group to a hydrophilic group; and, a step of forming a monomolecular film or a monomolecular built-up film selectively to an area which has been changed to the hydrophilic group.
Claim 10
Independent Claim
100 words
A method for formation of a pattern which comprises: a step of forming on an optional base plate an energy-sensitive thin film comprising a monomolecular film or a mononolecular built-up film containing a first sensitive group capable of causing a chemical reaction by energy beam to produce a hydrophilic group, a step of subjecting said sensitive thin film to pattern exposure to said energy beam to change said first sensitive group to a hydrophilic group; and, a step of forming a monomolecular film or a monomolecular built-up film selectively to an area which has been changed to the hydrophilic group.
Claim 11
Dependent Claim
31 words
The method for formation of a pattern as claimed in claim 8 wherein a linear siloxane molecule having bound chlorine to at least one end thereof is used as said reagent.
Claim 12
Dependent Claim
27 words
The method for formation of a pattern as claimed in claim 8 wherein said sensitive thin film is composed of novolak derivative positive resist, poly-formyloxystyrene or chloromethylstyrene.
Claim 13
Dependent Claim
29 words
The method for formation of a pattern as claimed in claim 8 wherein the Langmuir-Brojet method or the chemical adsorption method is used for forming said sensitive thin film.
Claim 14
Dependent Claim
35 words
The method for formation of a pattern as claimed in claim 8 wherein a second sensitive group is added to the surface of a monomolecular film at the step of selectively forming said monomolecular film.
Claim 15
Dependent Claim
59 words
The method for formation of a pattern as claimed in claim 8 wherein said sensitive thin film is a film containing a hydrophilic group or a trichlorosilane group at one end of a linear hydrocarbon and containing at the other end thereof a sensitive group capable of causing a chemical reaction by energy beam to produce a hydrophilic group.
Claim 16
Dependent Claim
24 words
The method for formation of a pattern as claimed in claim 13 wherein said sensitive group is a naphthoquinone-diazide group or a benzoquinone-diazide group.
References Cited (Backward Citations)
No citation records indexed.
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