EP0249371A2
Expired / Lapsed
EP
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Semiconductor device including two compound semiconductors, and method of manufacturing such a device
Assignee: Hitachi Ltd
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Filing: 1987-06-01
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Granted: —
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Expires: 2007-06-01
Abstract
Abstract A semiconductor device has a buffer layer 2 and a first layer of a compound semiconductor 3 are formed on a semiconductor substrate 1. A second compound semiconductor layer is then formed on the first layer 3, the first and second compound semiconductor layers having different lattice constants. That second layer has two semiconductor layers 41,43 with an impurity layer 42 therebetween. The impurity layer 42 reduces the effect of dislocations and so reduces leakage current. To complete the device, source and drain electrodes 61,62 and a Schottky gate electrode 5 are formed on the layer 43.
Inventors
- 👤 Takao Kuroda
- 👤 Takao Miyazaki
- 👤 Akiyoshi Watanabe
- 👤 Hiroyoshi Matsumura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 04:46
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D62/60; H10D62/605; H10D64/00; H10D64/60; H10D64/602; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3422; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
14 words
A semiconductor device having a first compound semiconductor (3) with a first lattice constant,
Claim 2
Dependent Claim
14 words
A semiconductor device having a first compound semiconductor (3) with a first lattice constant,
Claim 3
Dependent Claim
58 words
a second compound semiconductor (41,42,43) on the first compound semiconductor (3), with a lattice constant different from the first lattice constant; characterised in that: the second compound semiconductor (41,42,43) has at least two semiconductor layers (41,43) and there is at least one impurity atom adsorption layer (42) between adjacent semiconductor layers (41,43) of the second compound semiconductor (41,42,43).
Claim 4
Dependent Claim
58 words
a second compound semiconductor (41,42,43) on the first compound semiconductor (3), with a lattice constant different from the first lattice constant; characterised in that: the second compound semiconductor (41,42,43) has at least two semiconductor layers (41,43) and there is at least one impurity atom adsorption layer (42) between adjacent semiconductor layers (41,43) of the second compound semiconductor (41,42,43).
Claim 5
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein the second compound semiconductor (41,42,43) has two semiconductor layers (41,43).
Claim 6
Dependent Claim
23 words
A semiconductor device according to any one of the preceding claims, wherein the impurity atom adsorption layer (42) contains Si as an impurity.
Claim 7
Dependent Claim
51 words
A semiconductor device according to any one of the preceding claims wherein the semiconductor layer (43) of the second compound semiconductor furthest from the first compound semiconductor (3) has a thickness not more than 60 nm, and the or each other semiconductor layer has a thickness between 5 and 30 nm.
Claim 8
Dependent Claim
19 words
A semiconductor device according to any one of the preceding claims, wherein the first compound semiconductor (3) is (InGa)As.
Claim 9
Dependent Claim
18 words
A semiconductor device according to any one of the preceding claims wherein the second compound semiconductor is GaAs.
Claim 10
Dependent Claim
28 words
A semiconductor device according to any one of claims 1 to 5 wherein said second compound semiconductor is Ga 1-z Al z As (0 ≤ z ≦ 0.7).
Claim 11
Dependent Claim
59 words
A semiconductor device according to any one of claims 1 to 4 wherein the first compound semiconductor is a quaternary mixed crystal expressed by (In x Ga 1-x )(Asy P 1-y ) with 0 ≦ x, y 5 1; and the second compound semiconductor is a ter- nay mixed crystal expressed by (Ga 1-z Al z )As with 0≦z≦0.7.
Claim 12
Independent Claim
92 words
A method of manufacturing a semiconductor device, comprising forming a first semiconductor layer (41) on a first compound semiconductor (3) which has a first lattice constant, the first semiconductor layer (41) being a second compound semiconductor with a second lattice constant different from the first lattice constant; characterised in that: impurity atoms (42) are adsorbed to an upper surface of the first semiconductor layer (41), and a second semiconductor layer (43) of the second compound semiconductor is formed on the first semiconductor layer (41) to which the impurity atoms have been adsorbed.
Claim 13
Independent Claim
92 words
A method of manufacturing a semiconductor device, comprising forming a first semiconductor layer (41) on a first compound semiconductor (3) which has a first lattice constant, the first semiconductor layer (41) being a second compound semiconductor with a second lattice constant different from the first lattice constant; characterised in that: impurity atoms (42) are adsorbed to an upper surface of the first semiconductor layer (41), and a second semiconductor layer (43) of the second compound semiconductor is formed on the first semiconductor layer (41) to which the impurity atoms have been adsorbed.
Claim 14
Dependent Claim
23 words
A method according to claim 9, wherein the first semiconductor layer (41) and the second semiconductor layer (43) are formed by crystal growth.
References Cited (Backward Citations)
No citation records indexed.
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