EP0246626A2
Expired / Lapsed
EP
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Saw device
Assignee: Hitachi Ltd
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Filing: 1987-05-19
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Granted: —
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Expires: 2007-05-19
Abstract
Abstract In a SAW device comprising a piezoelectric substrate (1) and at least one set of metallic electrodes (2, 2ʹ, 5, 5ʹ) formed on the piezoelectric substrate, at least one set of the electrodes have a laminated structure comprised of a layer of an aluminum film added with an impurity at a concentration of 6 wt. % or less and another layer of a film of pure aluminum or aluminum added with an impurity at a concentration of 0.4 wt. % or less. The SAW device having the laminated structure of electrodes can handle high frequency electric signals of higher power and/or larger amplitudes.
Inventors
- 👤 Akitsuna Yuhara
- 👤 Jun Sasaki
- 👤 Tetsuya Hirashima
- 👤 Jun Yamada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 23:01
CPC Classifications
H; H03; H03H; H03H3/00; H03H3/007; H03H3/08; H03H9/00; H03H9/02; H03H9/02535; H03H9/02818; H03H9/02929; H03H9/125; H03H9/145; H03H9/14538; H03H9/14541
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
66 words
A SAW device comprising a piezoelectric substrate (1) and sets of finger electrodes (2, 2ʹ, 5, 5ʹ) disposed on said piezoelectric substrate, at least one set of said electrodes having a laminated structure including a first layer (7) of an aluminum film and a second layer (8) of an aluminum film which is disposed in laminated relationship with said first layer and added with an impurity.
Claim 2
Dependent Claim
66 words
A SAW device comprising a piezoelectric substrate (1) and sets of finger electrodes (2, 2ʹ, 5, 5ʹ) disposed on said piezoelectric substrate, at least one set of said electrodes having a laminated structure including a first layer (7) of an aluminum film and a second layer (8) of an aluminum film which is disposed in laminated relationship with said first layer and added with an impurity.
Claim 3
Dependent Claim
25 words
A SAW device according to Claim 1, wherein the impurity is added to said second layer at a concentration of 6 wt. % or less.
Claim 4
Dependent Claim
27 words
A SAW device according to Claim 1, wherein the impurity added to said second layer is selected from the group consisting of titanium, chromium, vanadium and manganese.
Claim 5
Dependent Claim
27 words
A SAW device according to Claim 2, wherein the impurity added to said second layer is selected from the group consisting of titanium, chromium, vanadium and manganese.
Claim 6
Dependent Claim
41 words
A SAW device according to Claim 1, wherein the aluminum film of said first layer is added with an impurity selected from the group consisting of titanium, copper, magnesium, zinc and nickel, at a concentration of 0.4 wt. % or less.
Claim 7
Dependent Claim
41 words
A SAW device according to Claim 2, wherein the aluminum film of said first layer is added with an impurity selected from the group consisting of titanium, copper, magnesium, zinc and nickel, at a concentration of 0.4 wt. % or less.
Claim 8
Dependent Claim
41 words
A SAW device according to Claim 3, wherein the aluminum film of said first layer is added with an impurity selected from the group consisting of titanium, copper, magnesium, zinc and nickel, at a concentration of 0.4 wt. % or less.
Claim 9
Dependent Claim
41 words
A SAW device according to Claim 4, wherein the aluminum film of said first layer is added with an impurity selected from the group consisting of titanium, copper, magnesium, zinc and nickel, at a concentration of 0.4 wt. % or less.
Claim 10
Dependent Claim
24 words
A SAW device according to Claim 1, wherein the overall film thickness of said first layer is larger than that of said second layer.
References Cited (Backward Citations)
No citation records indexed.
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