EP0244140A2
Expired / Lapsed
EP
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A semiconductor device with periodic structure
Assignee: Hitachi Ltd
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Filing: 1987-04-21
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Granted: —
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Expires: 2007-04-21
Abstract
Abstract A semiconductor device utilizing the fact that the effective mass of charge carriers becomes very large at certain points in the direction of a periodically repeating potential has therefore a periodic structure (6) which is formed in at least one of a semiconductor layer, an insulating layer, or a conductor layer of the device. The charge carriers are not scattered in the direction of the periodic pattern and their mobility is thus very large. A field effect transistor having such a periodic structure formed in a direction perpendicular to the source-drain direction is also disclosed.
Inventors
- 👤 Yoshifumi Katayama
- 👤 . Yoshimasa Murayama
- 👤 Yasuhiro Shiraki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 15:32
CPC Classifications
B; B82; B82Y; B82Y10/00; H; H10; H10D; H10D30/00; H10D30/40; H10D30/43; H10D30/435; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8181; H10D30/47; H10D30/471; H10D30/475; H10D30/4755
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
89 words
A semiconductor device having a semiconductor region including a carrier transfer region, at least two carrier transmitting and receiving means (10,11), and means (9) for controlling the density of carriers; characterised in that: the device includes a periodic structure (6) having elements arranged periodically in a predetermined direction such that charged particles are free to move effectively only in a direction perpendicular to the predetermined direction, the periodic structure (6) being in at Ieast one of a semiconductor layer, an insulator layer, or a conductor layer of the device.
Claim 2
Dependent Claim
89 words
A semiconductor device having a semiconductor region including a carrier transfer region, at least two carrier transmitting and receiving means (10,11), and means (9) for controlling the density of carriers; characterised in that: the device includes a periodic structure (6) having elements arranged periodically in a predetermined direction such that charged particles are free to move effectively only in a direction perpendicular to the predetermined direction, the periodic structure (6) being in at Ieast one of a semiconductor layer, an insulator layer, or a conductor layer of the device.
Claim 3
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the period of the periodic structure (6) is between 5 and 500 nm.
Claim 4
Dependent Claim
31 words
A semiconductor device according to claim 1 or claim 2, wherein the periodic structure (6) is defined by a plurality of stripe-shaped semiconductor layers which are spaced apart from each other.
Claim 5
Dependent Claim
30 words
A semiconductor device according to claim 1 or claim 2, wherein the periodic structure (6) is formed by implanting ions into a plurality of stripe regions in the semiconductor layer.
Claim 6
Dependent Claim
24 words
A semiconductor device according to claim 1 or claim 2, wherein the periodic structure is defined by alternate stripe-shaped insulator layers having different thicknesses.
Claim 7
Dependent Claim
17 words
A semiconductor device according to any one of the preceding claims, wherein the charged particle are electrons.
Claim 8
Dependent Claim
17 words
A semiconductor device according to any one of the preceding claims, wherein the charged particles are holes.
References Cited (Backward Citations)
No citation records indexed.
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