EP0242893A1
Expired / Lapsed
EP
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Method of manufacturing a semiconductor device
Assignee: Koninklijke Philips NV
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Filing: 1987-03-02
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Granted: —
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Expires: 2007-03-02
Abstract
Abstract A semiconductor device comprising a circuit element having a first (9) and a second (14) electrode zone of opposite conductivity types, the dopant for the second electrode zone (14) being provided in the semiconductor body (1) via an opening (12) in a masking layer (11), the opening (12) then being reduced by providing edge portions (17) (16) of passivating material, and the second electrode zone (14) is connected to a conductive layer (22), which extends across the layer (11) and the edge portions (17) (16) into the opening of reduced size. The contact opening of reduced size can be derived from the doping opening (12) without taking into account an alignment tolerance. Preferably, the layer (11) comprises a pattern of electrically conducting material having a closed geometry, which pattern surrounds the opening (12) entirely.
Inventors
- 👤 Wilhelmus J.M.J. Josquin
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 15:54
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D84/00; H10D84/01; H10D84/0112; H10P; H10P76/00; H10P76/40
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
277 words
A method of manufacturing a semiconductor device comprising at least one circuit element, this device comprising a semiconductor body having a surface, of which a first surface part is occupied by a first electrode zone of the circuit element adjoining this surface, the first electrode zone being of a first conductivity type and a first layer masking against doping being present on the surface, in which layer a first opening to be used in a first doping treatment for providing a dopant for a second electrode of the circuit element of the second conductivity type is formed in such a manner that the second electrode zone, viewed on the surface, is surrounded entirely by the first electrode zone, while after the first doping treatment a conductive layer for electrical connection of the second electrode zone is provided, which is separated by an insulating layer from the first electrode zone and is located in an opening in this insulating layer on a second surface part of the second electrode zone, the second surface part being practically of the same size as the first opening, characterized in that after the first doping treatment a second layer of passivating material is provided at least on a part of the first layer in which the first opening is present, which second layer is removed at least at the area of the first opening by anisotropic etching so that in the first opening an edge portion of the second layer located along the whole edge of the first opening is left and in that then the conductive layer is provided on the first layer and the edge portion of the second layer.
Claim 2
Independent Claim
277 words
A method of manufacturing a semiconductor device comprising at least one circuit element, this device comprising a semiconductor body having a surface, of which a first surface part is occupied by a first electrode zone of the circuit element adjoining this surface, the first electrode zone being of a first conductivity type and a first layer masking against doping being present on the surface, in which layer a first opening to be used in a first doping treatment for providing a dopant for a second electrode of the circuit element of the second conductivity type is formed in such a manner that the second electrode zone, viewed on the surface, is surrounded entirely by the first electrode zone, while after the first doping treatment a conductive layer for electrical connection of the second electrode zone is provided, which is separated by an insulating layer from the first electrode zone and is located in an opening in this insulating layer on a second surface part of the second electrode zone, the second surface part being practically of the same size as the first opening, characterized in that after the first doping treatment a second layer of passivating material is provided at least on a part of the first layer in which the first opening is present, which second layer is removed at least at the area of the first opening by anisotropic etching so that in the first opening an edge portion of the second layer located along the whole edge of the first opening is left and in that then the conductive layer is provided on the first layer and the edge portion of the second layer.
Claim 3
Dependent Claim
21 words
A method as claimed in Claim 1, characterized in that as the second layer a layer of insulating material is provided.
Claim 4
Dependent Claim
31 words
A method as claimed in Claim 1 or 2, charac terized in that as the first layer a layer is used which comprises at least a layer of electrically conducting material.
Claim 5
Dependent Claim
29 words
A method as claimed in Claim 3, characterized in that the layer of electrically conducting material has a pattern with a closed geometry, this pattern surrounding the first opening.
Claim 6
Dependent Claim
36 words
A method as claimed in Claim 3 or 4, characterized in that as the conductive material a refractory material, such as semiconductor material, tantalum titanium, molybdenum or tungsten or a silicide of these materials is used.
Claim 7
Dependent Claim
40 words
A method as claimed in Claim 3, 4 or 5, characterized in that the layer of electrically conducting material is provided simultaneously with an electrically conducting material for a gate electrode of at least one insulated gate field effect transistor.
Claim 8
Dependent Claim
18 words
A semiconductor device manufactured by the use of the method claimed in any one of the preceding Claims.
Claim 9
Dependent Claim
172 words
A semiconductor device comprising at least one circuit element, this device comprising a semiconductor body having a surface which is adjoined by a first electrode zone of a first conductivity type of the circuit element, the circuit element having a second electrode zone of the second conductivivty type which, viewed on the surface, is surrounded entirely by the first electrode zone, while a first conductive layer separated by an insulating layer from the first electrode zone is present, which first conductive layer is connected through a contact opening in this insulating layer to the second electrode zone, characterized in that a second conductive layer is present on the insulating layer, which second conductive layer has at the area of the contact opening a first opening corresponding to this contact opening, while at least along the whole edge of this first opening an edge portion of passivating material is present in this first opening and the first conductive layer extends over the second conductive layer and the edge portion into the contact opening.
Claim 10
Dependent Claim
172 words
A semiconductor device comprising at least one circuit element, this device comprising a semiconductor body having a surface which is adjoined by a first electrode zone of a first conductivity type of the circuit element, the circuit element having a second electrode zone of the second conductivivty type which, viewed on the surface, is surrounded entirely by the first electrode zone, while a first conductive layer separated by an insulating layer from the first electrode zone is present, which first conductive layer is connected through a contact opening in this insulating layer to the second electrode zone, characterized in that a second conductive layer is present on the insulating layer, which second conductive layer has at the area of the contact opening a first opening corresponding to this contact opening, while at least along the whole edge of this first opening an edge portion of passivating material is present in this first opening and the first conductive layer extends over the second conductive layer and the edge portion into the contact opening.
Claim 11
Dependent Claim
27 words
A semiconductor device as claimed in Claim 8, characterized in that the first conductive layer is separated by an intermediate insulating layer from the second conductive layer.
Claim 12
Dependent Claim
38 words
A semiconductor device as claimed in Claim 8, characterized in that the first electrode zone is connected to a further conductive layer and a conductive connection is present between this further conductive layer and the second conductive layer.
Claim 13
Dependent Claim
74 words
A semiconductor device as claimed in Claim 8, characterized in that a second layer of passivating material is present on the second conductive layer and is provided with a third opening, which is larger than the first opening, the first opening being located entirely within the third opening and the first conductive layer extending across the second layer of passivating material and being connected in the third opening directly to the second conductive layer.
References Cited (Backward Citations)
DE3023616A1
Cited
EP0076106A2
Cited
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