EP0242663A2
Expired / Lapsed
EP
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Light sensing devices with lenticular pixels
Assignee: Eastman Kodak Co
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Filing: 1987-04-02
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Granted: —
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Expires: 2007-04-02
Abstract
Abstract A multipixel light sensing semiconductor device contains in at least one pixel a lens presenting a convex surface and a lens supporting layer for directing light inwardly to a semiconductive light sensor. The lens supporting layer has a thickness exceeding that of the lens, and the lens is laterally confined on the lens supporting layer between at least two opposed pixel edges.
Inventors
- 👤 Armin Karl Weiss
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 15:02
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H10F39/80; H10F39/806; H10F39/8063; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H10F77/40; H10F77/407
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
132 words
A light sensing semiconductor device including an array of light sensing pixels comprised of a semiconductive substrate including a light sensing portion spaced laterally inwardly from at least two opposed pixel edges and means for transmitting incident light to said light sensing portion including a lens presenting a convex surface capable of receiving light laterally outwardly of said light sensing portion and directing the light toward said light sensing portion, and a light transmissive portion interposed between said lens and said light sensing portion, characterized in that in at least one of said pixels said light transmissive portion is comprised of a lens supporting layer having a thickness exceeding that of said lens and said lens is laterally confined on said lens supporting layer between at least said two opposed pixel edges.
Claim 2
Dependent Claim
132 words
A light sensing semiconductor device including an array of light sensing pixels comprised of a semiconductive substrate including a light sensing portion spaced laterally inwardly from at least two opposed pixel edges and means for transmitting incident light to said light sensing portion including a lens presenting a convex surface capable of receiving light laterally outwardly of said light sensing portion and directing the light toward said light sensing portion, and a light transmissive portion interposed between said lens and said light sensing portion, characterized in that in at least one of said pixels said light transmissive portion is comprised of a lens supporting layer having a thickness exceeding that of said lens and said lens is laterally confined on said lens supporting layer between at least said two opposed pixel edges.
Claim 3
Dependent Claim
34 words
A light sensing semiconductor device according to claim 1 further characterized in that said lens of said one pixel is laterally confined on said lens supporting layer inwardly of each edge of said pixel.
Claim 4
Dependent Claim
36 words
A light sensing semiconductor device according to claim 2 further characterized in that said one pixel is polygonal, bounded by linear edges and said lens has edges parallel to said pixel edges and spaced inwardly therefrom.
Claim 5
Dependent Claim
19 words
A light sensing semiconductor device according to claim 1 further characterized in that said lens is a pillow lens.
Claim 6
Dependent Claim
28 words
A light sensing semiconductor device according to claim 1 further characterized in that said supporting layer has a lower optical density than said lenses at their greatest thickness.
Claim 7
Dependent Claim
27 words
A light sensing semiconductor device according to claim 1 further characterized in that said supporting layer surface areas surrounding said lenses are more hydrophobic than said lenses.
Claim 8
Dependent Claim
70 words
A light sensing semiconductor device according to claim 6 further characterized in that said material forming said lenses when coated as a planar layer exhibits a contact angle with an aqueous droplet containing 1.5 weight percent tetramethyl ammonium hydroxide which is at least 5° lower than said supporting layer forms with said droplet, the contact angle being meausured 120 seconds after the water droplet and surface are brought into contact.
Claim 9
Dependent Claim
20 words
A light sensing semiconductor device according to claim 1 in which said lenses are formed of a positive working photoresist.
Claim 10
Dependent Claim
22 words
A light sensing semiconductor device according to claim 1 in which said supporting layer exhibits a thickness in excess of 6 µm.
Claim 11
Dependent Claim
24 words
A light sensing semiconductor device according to claim 9 further characterized in that said supporting layer is comprised of an acrylic or methacrylic polymer.
References Cited (Backward Citations)
No citation records indexed.
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