EP0241729A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Unframed via interconnection with dielectyric etch stop
Assignee: General Electric Co
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Filing: 1987-03-16
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Granted: —
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Expires: 2007-03-16
Abstract
Abstract A layer of aluminum oxide or other insulative metal oxide is employed as an etch stop in the fabrication of very large scale integrated circuit devices. The use of such etch stops permits fabrication of unframed or borderless via openings and correspondingly permits greater metallization line pitch, smaller circuit features, and more reliable interlayer electrical contact. A method for insulative metal oxide deposition is also described.
Inventors
- 👤 Manjin Jerome Kim
- 👤 Bruce Frederick Griffing
- 👤 David William Skelly
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 09:35
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/69397; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W20/031; H10W20/063; H10W20/0633; H10W20/081; H10W20/084; Y; Y10; Y10S; Y10S438/00; Y10S438/97
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
93 words
A method for forming via openings, especially during integrated electric circuit device fabrication, said method comprising the steps of: etching a dielectric layer to provide via openings therein, said etching occurring down to a layer of insulative metal oxide lying beneath said dielectric layer so as to expose said insulative metal oxide through said openings; etching said layer of insulative metal oxide through said openings in said dielectric down to a layer of conductive material so that said conductive layer is exposed through said openings in said dielectric and insulative metal oxide layers.
Claim 2
Independent Claim
93 words
A method for forming via openings, especially during integrated electric circuit device fabrication, said method comprising the steps of: etching a dielectric layer to provide via openings therein, said etching occurring down to a layer of insulative metal oxide lying beneath said dielectric layer so as to expose said insulative metal oxide through said openings; etching said layer of insulative metal oxide through said openings in said dielectric down to a layer of conductive material so that said conductive layer is exposed through said openings in said dielectric and insulative metal oxide layers.
Claim 3
Dependent Claim
14 words
The method of claim 1 in which said insulative metal oxide comprises aluminum oxide.
Claim 4
Dependent Claim
14 words
The method of claim 1 in which said insulative metal oxide comprises magnesium oxide.
Claim 5
Dependent Claim
12 words
The method of claim 1 which said dielectric layer comprises silicon oxide.
Claim 6
Dependent Claim
12 words
The method of claim 1 in which said conductive material comprises metal.
Claim 7
Dependent Claim
17 words
The method of claim 1 in which said dielectric layer etching is performed by reactive ion etching.
Claim 8
Dependent Claim
20 words
The method of claim 6 in which said reactive ion etching is performed in an atmosphere including NF₃ and argon.
Claim 9
Dependent Claim
20 words
The method of claim 4 in which said reactive ion etching is performed in an atmosphere including CHF₃ and argon.
Claim 10
Dependent Claim
27 words
The method of claim 1 in which the etching of said dielectric layer is approximately 20 to 1 in its etching selectivity relative to said aluminum oxide.
Claim 11
Dependent Claim
24 words
The method of claim 1 in which the etching of said aluminum oxide layer is performed in an atmosphere of BCl₃ and oxygen gases.
Claim 12
Independent Claim
120 words
A method for forming via openings in the fabrication of integrated electric circuit devices, said method comprising the steps of: depositing and patterning a conductive layer overlying an insulative substrate; depositing a first dielectric layer covering said patterned conductive layer; planarizing said first dielectric layer, at least down to the level of said conductive layer; depositing a layer of insulative metal oxide over said planarized substrate; depositing and patterning a second dielectric layer on said insulative metal oxide layer, with openings in said second dielectric layer at least partially overlying portions of said patterned conductive layer and extending down to said insulative metal oxide layer; and removing insulative metal oxide material exposed through said openings in said second dielectric layer.
Claim 13
Independent Claim
120 words
A method for forming via openings in the fabrication of integrated electric circuit devices, said method comprising the steps of: depositing and patterning a conductive layer overlying an insulative substrate; depositing a first dielectric layer covering said patterned conductive layer; planarizing said first dielectric layer, at least down to the level of said conductive layer; depositing a layer of insulative metal oxide over said planarized substrate; depositing and patterning a second dielectric layer on said insulative metal oxide layer, with openings in said second dielectric layer at least partially overlying portions of said patterned conductive layer and extending down to said insulative metal oxide layer; and removing insulative metal oxide material exposed through said openings in said second dielectric layer.
Claim 14
Dependent Claim
43 words
The method of claim 11 further including the step of: depositing and patterning a second conductive layer so that electrical contact is made, through said openings in said second dielectric layer and in said insulative metal oxide layer, to said first conductive layer.
Claim 15
Dependent Claim
24 words
The method of claim 11 in which said insulative metal oxide is selected from the group consisting of aluminum oxide, magnesium oxide, and spinel.
Claim 16
Independent Claim
68 words
A method for depositing a thin uniform layer of insulative metal oxide on a semiconductor substrate, said method comprising the steps of: disposing said substrate and a sample of said metal or metal oxide in a evacuable chamber; flowing a mixture of oxygen and an inert gas through said chamber at a reduced pressure for sputtering and sputtering said metal from said sample using radio frequency electromagnetic energy.
Claim 17
Independent Claim
68 words
A method for depositing a thin uniform layer of insulative metal oxide on a semiconductor substrate, said method comprising the steps of: disposing said substrate and a sample of said metal or metal oxide in a evacuable chamber; flowing a mixture of oxygen and an inert gas through said chamber at a reduced pressure for sputtering and sputtering said metal from said sample using radio frequency electromagnetic energy.
Claim 18
Dependent Claim
21 words
The method of claim 14 in which said metal is selected from the group consisting of aluminum, magnesium and combinations thereof.
Claim 19
Dependent Claim
14 words
The method of claim 14 in which said reduced pressure is approximately 12 microns.
Claim 20
Dependent Claim
17 words
The method of claim 14 in which said flow rate of said mixture is approximately 25 cc/minute.
Claim 21
Dependent Claim
12 words
The method of claim 14 in which said inert gas comprises argon.
Claim 22
Dependent Claim
14 words
The method of claim 14 in which said mixture comprises 10% oxygen by volume.
Claim 23
Dependent Claim
19 words
The method of claim 14 in which said radio frequency is supplied at the rate of approximately 500 watts.
Claim 24
Dependent Claim
18 words
The method of claim 14 in which said metal oxide is deposited from a metal oxide sputtering source.
References Cited (Backward Citations)
No citation records indexed.
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