EP0240864A2
Expired / Lapsed
EP
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High-yield semiconductor memory devices
Assignee: HP Inc
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Filing: 1987-03-27
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Granted: —
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Expires: 2007-03-27
Abstract
Abstract Memory devices consist of small memory blocks memory (12) with very high yields (approximately97%). Each block (12) is capable of functioning whether or not neighboring blocks are defective. Blocks are interconnected with only five lines and communicate serially. External circuitry (42) contains ECC, a means for avoiding defective blocks and using spares, plus interface and control circuitry.
Inventors
- 👤 Marvin S. Keshner
- 👤 Steven Glen Eaton
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 19:18
CPC Classifications
G; G11; G11C; G11C19/00; G06; G06F; G06F11/00; G11C29/00; G11C29/006; G11C8/00; G11C8/12; G06F11/07; G06F11/08; G06F11/10; G06F11/1008; G06F11/22; G06F11/26
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
38 words
A memory device, characterized by a multiplicity of memory blocks (12); and a multiplicity of first means (41), one dedicated to one memory block (12) for controlling said memory block (12) independently of other said memory blocks (12).
Claim 2
Dependent Claim
38 words
A memory device, characterized by a multiplicity of memory blocks (12); and a multiplicity of first means (41), one dedicated to one memory block (12) for controlling said memory block (12) independently of other said memory blocks (12).
Claim 3
Dependent Claim
39 words
A memory device as in claim 1 characterized by a second means (42) for controlling a plurality of said first means (41), said second means being electrically connected to said first means (41), preferrably by a communication means (20).
Claim 4
Dependent Claim
39 words
A memory device as in claim 1, characterized in that said memory blocks (12) and said first means (41) are located on a first substrate, e.g.-a semiconductive wafer, and said second means (42) is located on a second substrate.
Claim 5
Dependent Claim
22 words
A memory device as in claim 3, characterized in that said second substrate is bonded to said first substrate or vice versa.
Claim 6
Dependent Claim
20 words
A memory device as in claim 3, characterized in that said first substrate is diced into a multiplicity of chips.
Claim 7
Dependent Claim
18 words
A memory device as in claim 5, characterized in that said chips are bonded to said second substrate.
Claim 8
Dependent Claim
23 words
A memory device as in of of claims 2 to 6, characterized in that said second means (42) is a replaceable, tested circuit.
Claim 9
Dependent Claim
30 words
A memory device as in one of claims 2 to 7, characterized in that said communication means (20) connects said second means (42) directly to each said first means (41).
Claim 10
Dependent Claim
22 words
A memory device as in one of claims 2 to 8, characterized in that said communication means (20) transmits information in parallel.
Claim 11
Dependent Claim
28 words
A memory device as in one of claims 2 to 9, characterized by a third means to selectively connect said first means (41) to said communication means (20).
Claim 12
Dependent Claim
22 words
ll.A memory device as in claim 10, characterized in that said third means further comprises laser-blowable fuses located in said memory blocks.
Claim 13
Dependent Claim
25 words
A memory device as in one of claims 2 to 11, characterized in that said communication means (20) further comprises a line for transmitting addresses.
Claim 14
Dependent Claim
28 words
A memory device as in one of claims 2 to 12, characterized in that said communication means (20) further comprises a line for transmitting both addresses and data.
Claim 15
Dependent Claim
32 words
A memory device as in one of claims 2 to 7, characterized in that said communic- tion means (20) electrically connects to a plurality of first means (41) located in a row.
Claim 16
Dependent Claim
38 words
A memory device as in one of claims 2 to 7, characterized in that said communication means (20) electrically connects to a plurality of first means (41) located in a group having a multiplicity of rows and columns.
Claim 17
Dependent Claim
32 words
A memory device as in one of claims 1 to 15, characterized in that the area of each said memory blocks (12) is significantly smaller than the reciprocal of the defect density.
References Cited (Backward Citations)
No citation records indexed.
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