EP0240567A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1986-07-23
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Granted: —
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Expires: 2006-07-23
Abstract
Abstract A semiconductor device in which a bipolar transistor is formed by using, as a base, a two-dimensional carrier formed on a hetero junction surface between a first compound semiconductor and a second compound semiconductor. The invention is further related to a semiconductor device in which the bipolar transistor and a field-effect transistor are formed on the same epitaxially grown substrate.
Inventors
- 👤 Toshiyuki Usagawa
- 👤 Masao Yamane
- 👤 Shigeo Goto
- 👤 Yasunari Umemoto
- 👤 Norikazu Hashimoto
- 👤 Hiroyuki Itoh
- 👤 Tomoyoshi Mishima
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 16:45
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/80; H10D10/821; H10D10/881; H10D10/841; H10D84/00; H10D84/01; H10D84/02; H10D84/05
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
111 words
A semiconductor device characterized by comprising, at least, a first compound semiconductor layer, a second compound semiconductor layer, a two-dimensional carrier layer which is formed at a junction interface of at least one heterojunction,defined by said first compound semiconductor layer and said second compound semiconductor layer, a first electrode which is electrically connected to said two-dimensional carrier layer, third and fourth compound semiconductor layers which are respectively connected on both sides of said first and second compound semiconductor layers and which have a conductivity type opposite to that of said two-dimensional carrier layer, and second and third electrodes which are electrically connected to said third and fourth compound semiconductor layers respectively.
Claim 2
Dependent Claim
111 words
A semiconductor device characterized by comprising, at least, a first compound semiconductor layer, a second compound semiconductor layer, a two-dimensional carrier layer which is formed at a junction interface of at least one heterojunction,defined by said first compound semiconductor layer and said second compound semiconductor layer, a first electrode which is electrically connected to said two-dimensional carrier layer, third and fourth compound semiconductor layers which are respectively connected on both sides of said first and second compound semiconductor layers and which have a conductivity type opposite to that of said two-dimensional carrier layer, and second and third electrodes which are electrically connected to said third and fourth compound semiconductor layers respectively.
Claim 3
Dependent Claim
85 words
A semiconductor device as defined in Claim 1, characterized in that at least one of said first, second, third and fourth compound semiconductor layers is a superlattice constructed of one compound semiconductor whose donor level or acceptor level is not higher than a liquid nitrogen temperature, and the other compound semiconductor which is not doped with an impurity and which is smaller in an electron affinity or greater in a sum of the electron affinity and an energy band gap than said one compound semiconductor.
Claim 4
Dependent Claim
44 words
A semiconductor device as defined in Claim 1 or 2, characterized by comprising, at least, fourth and fifth electrodes which are electrically connected to said two-dimensional carrier layer, and a sixth electrode which serves to control a carrier concentration of said two-dimensional carrier layer.
Claim 5
Dependent Claim
27 words
A semiconductor device as defined in any of Claims 1 to 3, characterized in that the two-dimensional carrier layers are formed at a plurality of heterojunction interface
References Cited (Backward Citations)
No citation records indexed.
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