EP0240306A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for forming deposited film
Assignee: Canon Inc
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Filing: 1987-03-31
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Granted: —
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Expires: 2007-03-31
Abstract
Abstract A method for forming a deposited film comprises effecting a step (A) and a step (B) at least one time, the step (A) being introduction of a starting material (A) which is either one of a gaseous starting material for formation of a deposited film or a gaseous halogenic oxidizing agent having the property of oxidative action on said gaseous starting material into a film forming space in which a substrate for film formation is arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (1) and the step (B) being the introduction of a starting material (B) which is the other of said gaseous starting material and said gaseous halogenic oxidizing agent into said film forming space, thereby causing surface reaction on said adsorbed layer (I) to occur to form a deposited film (I).
Inventors
- 👤 Jinsho Matsuyama
- 👤 Yutaka Hirai
- 👤 Masao Ueki
- 👤 Akira Sakai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 18:08
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
99 words
A method of forming a deposited film on a substrate, comprising reacting together in a film forming space containing the substrate a gaseous starting material (A) for formation of the deposited film, and a gaseous halogenic oxidising agent (B) therefor, wherein (A) one of the gases (A) and (B) is introduced into the film forming space so as to form an adsorbed layer (I) in the surface of the substrate, and (B) the other gas (B) or (A) is introduced into the film forming space to cause surface reaction on the adsorbed layer (A) to form a deposited film.
Claim 2
Independent Claim
99 words
A method of forming a deposited film on a substrate, comprising reacting together in a film forming space containing the substrate a gaseous starting material (A) for formation of the deposited film, and a gaseous halogenic oxidising agent (B) therefor, wherein (A) one of the gases (A) and (B) is introduced into the film forming space so as to form an adsorbed layer (I) in the surface of the substrate, and (B) the other gas (B) or (A) is introduced into the film forming space to cause surface reaction on the adsorbed layer (A) to form a deposited film.
Claim 3
Dependent Claim
27 words
A method according to claim 1, comprising the step (C) of heat exciting said substrate or the deposited film (I) from the growth side of the film.
Claim 4
Dependent Claim
25 words
A method according to claim 2, wherein said heat excitation step (C) is practised prior to the step (A) of forming the adsorbed layer (I).
Claim 5
Dependent Claim
21 words
A method according to claim 3, wherein said heat excitation step (c) excites vibration of atoms in the adsorbed layer (I).
Claim 6
Dependent Claim
21 words
A method according to claim 3, wherein said heat excitation step (C) excites vibration of atoms in said deposited film (I).
Claim 7
Independent Claim
27 words
A method according to any preceding claim, wherein said adsorbed layer (I) is formed by having said gaseous halogenic oxidizing agent (B) adsorbed onto said substrate surface.
Claim 8
Independent Claim
36 words
The method according to any of claims 1 to 5, wherein said adsorbed layer (I) is formed by having said gaseous starting material (A) for formation of a deposited film (I)- adsorbed onto said substrate surface.
Claim 9
Dependent Claim
81 words
A method according to claim 1, wherein, after the step (B) for forming said deposited film (I), the steps of feeding said-starting material (A) onto the deposited film ( I ) formed in said step (B) to have the material (A) adsorbed thereon to form an adsorbed layer ( II ), and then feeding said starting material (B) onto said adsorbed layer (II), thereby causing the surface reaction to occur to form a deposited film (II), are conducted at least once.
Claim 10
Independent Claim
14 words
A method according to any preceding claim, wherein said deposited film (I) is amorphous.
Claim 11
Independent Claim
17 words
A method according to any of claims 1 to 8, wherein said deposited film (I) is crystalline.
Claim 12
Independent Claim
18 words
A method according to any preceding claim, wherein said gaseous starting material (I) is a chain silane compound.
Claim 13
Dependent Claim
17 words
A method according to claim 11, wherein said chain silane compound is a straight chain silane compound.
Claim 14
Dependent Claim
30 words
A method according to claim 12, wherein said straight chain silane compound is represented by the general formula Si H 2n+2 ( n is an integer of 1 to 8).
Claim 15
Dependent Claim
16 words
A method accordingto claim 11, wherein said chain silane compound is a branched chain silane compound.
Claim 16
Independent Claim
26 words
A method according to any of claims 1 to 10, wherein said gaseous starting material (I) is a silane compound having a cyclic structure of silicon.
Claim 17
Independent Claim
18 words
A method according to any preceding claim, wherein said gaseous halogenic oxidizing agent (II) includes a halogen gas.
Claim 18
Dependent Claim
12 words
A method according to claim 16, wherein said halogen gas is fluorine.
Claim 19
Dependent Claim
12 words
A method according to claim 16, wherein said halogen gas is chlorine.
Claim 20
Independent Claim
26 words
A method according to any of claims 1 to 15, wherein said gaseous halogenic oxidizing agent (II) is a gas containing fluorine atoms as a constituent.
Claim 21
Independent Claim
144 words
A method for forming a deposited film comprising effecting a step (A) and a step (B) at least one time, the step (A) being introduction of a starting material (A) which is either one of a gaseous starting material for formation of a deposited film or a gaseous halogenic oxidizing agent having the property of oxidative action on said gaseous starting material into a film forming space in which a substrate for film formation is arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step (B) being the introduction of a starting material (B) which is the other of said gaseous starting material and said gaseous halogenic oxidizing agent into said film forming space, thereby causing surface reaction on said adsorbed layer (I) to occur to form a deposited film (I).
Claim 22
Independent Claim
144 words
A method for forming a deposited film comprising effecting a step (A) and a step (B) at least one time, the step (A) being introduction of a starting material (A) which is either one of a gaseous starting material for formation of a deposited film or a gaseous halogenic oxidizing agent having the property of oxidative action on said gaseous starting material into a film forming space in which a substrate for film formation is arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step (B) being the introduction of a starting material (B) which is the other of said gaseous starting material and said gaseous halogenic oxidizing agent into said film forming space, thereby causing surface reaction on said adsorbed layer (I) to occur to form a deposited film (I).
References Cited (Backward Citations)
DE3208494A1
Cited
DE3525211A1
Cited
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