EP0236629A2
Expired / Lapsed
EP
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Driving circuit of a liquid crystal display device
Assignee: Toshiba Corp
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Filing: 1986-12-12
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Granted: —
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Expires: 2006-12-12
Abstract
Abstract There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent. Further using this Mo-Ta alloy, there is provided a display device driving circuit substrate comprising an insulating substrate, a plurality of address lines (11) and data lines (13) intersecting each other on the substrate, the address line (11) being formed of a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent, a plurality of thin-film transistors (15) each formed at an intersection of said address and data lines (11, 13) and having its gate electrode (17) connected to an address line (11) and its source electrode (18) connected to data line (13), and a plurality of display electrodes (21) connected to the drain electrode (19) of the thin-film transistor (15).
Inventors
- 👤 Masayuki C/O Patent Division Dohjo
- 👤 Yasuhisa C/O Patent Division Oana
- 👤 Mitsushi C/O Patent Division Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 06:59
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10D; H10D86/00; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136286; G02F1/13629
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
18 words
A semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent.
Claim 2
Dependent Claim
18 words
A semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1, characterized in that said alloy contains more than 95% of molybdenum and tantalum as a total quantity.
Claim 4
Dependent Claim
22 words
A semiconductor device according to claim 1, characterized in that it has multi-layered interconnection having at least one said alloy containing layer.
Claim 5
Dependent Claim
107 words
A driving circuit substrate for display device comprising: an insulating substrate (1); a plurality of address lines (11) and data lines (13) intersecting each other on the substrate, the address line (11) being formed of a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent; a pluarlity of thin-film transistors (15) each formed at an intersection of said address and data lines (11,13) and having its gate electrode (17) connected to an address line (11) and its source electrode (18) connected to data line (13); and a plurality of display electrodes (21) connected to the drain electrode (19) of the thin-film transistor (15).
Claim 6
Dependent Claim
107 words
A driving circuit substrate for display device comprising: an insulating substrate (1); a plurality of address lines (11) and data lines (13) intersecting each other on the substrate, the address line (11) being formed of a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent; a pluarlity of thin-film transistors (15) each formed at an intersection of said address and data lines (11,13) and having its gate electrode (17) connected to an address line (11) and its source electrode (18) connected to data line (13); and a plurality of display electrodes (21) connected to the drain electrode (19) of the thin-film transistor (15).
Claim 7
Dependent Claim
29 words
A driving circuit substrate for display device according to claim 4, characterized in that said alloy contains above 95 atomic percent of molybdenum and tantalum as a total quantity.
Claim 8
Dependent Claim
22 words
A driving circuit substrate for display device according to claim 4, characterized in that it contains at least one said alloy layer.
Claim 9
Dependent Claim
81 words
A driving circuit substrate for display device according to claim 4, characterized in that said thin-film transistors (15) have a gate electrode (17) formed integral with said address line (11), a semiconductor thin film (33, 35, 37) formed over said gate electrode (17) through a gate insulating film (31) containing an anodic oxidation film or thermal oxidation film, and drain and source electrodes (43, 41) formed by the same conductive material as said data line (13) on the semi-conductor thin film.
Claim 10
Dependent Claim
64 words
A driving circuit substrate for display device according to claim 4, characterized in that an insulating interlayer film containing an anode oxidation film (118) or thermal oxidation (118) film for the address line (11) and semiconductor thin film (33, 35, 37) formed simultaneously with the semiconductor thin film for the thin-film transistor (15) are formed between the respective address and data lines (11, 13).
Claim 11
Dependent Claim
19 words
An electrode interconnection material comprising a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent.
Claim 12
Dependent Claim
19 words
An electrode interconnection material comprising a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent.
Claim 13
Dependent Claim
24 words
An electrode interconnection material according to claim 9, characterized in that said alloy contains 95% of a molybdenum and tantalum as a total quantity.
Claim 14
Dependent Claim
38 words
An electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent.
Claim 15
Dependent Claim
38 words
An electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent.
Claim 16
Dependent Claim
31 words
An electrode interconnection material according to claim 11, characterized in that said underlying metal film is a molybdenum-tantalum alloy film having a tantalum composition ratio of less than 84 atomic percent.
References Cited (Backward Citations)
No citation records indexed.
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