EP0235827A2
Expired / Lapsed
EP
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Thermal print head containing super-thin polycrystalline silicon film transistor
Assignee: Sony Corp
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Filing: 1987-03-06
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Granted: —
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Expires: 2007-03-06
Abstract
Abstract Disclosed is herein a thermal print head containing super-thin polycrystalline silicon film transistors, comprising: heating resistors (3B, 2l) formed in a thin polycrystalline silicon layer (3) formed over a substrate (l); and a driving circuit comprising super-thin film transistors (4, 5, 6) each having a thin active layer (3c), formed in the polycrystalline silicon layer (3).
Inventors
- 👤 Masanori Yagino
- 👤 Hisao Hayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 23:32
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/315; B41J2/32; B41J2/335; B41J2/33505; B41J2/33515; B41J2/33545; B41J2/3355; B41J2/33555; B41J2/3357
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
54 words
A thermal print head containing super-thin polycrystalline silicon film transistors, characterized in: heating resistors (3B, 2l) formed in a thin polycrystalline silicon layer (3) formed over a substrate (l); and a driving circuit comprising super-thin film transistors (4, 5, 6) each having a thin active layer (3c) formed in said polycrystalline silicon layer (3).
Claim 2
Dependent Claim
54 words
A thermal print head containing super-thin polycrystalline silicon film transistors, characterized in: heating resistors (3B, 2l) formed in a thin polycrystalline silicon layer (3) formed over a substrate (l); and a driving circuit comprising super-thin film transistors (4, 5, 6) each having a thin active layer (3c) formed in said polycrystalline silicon layer (3).
Claim 3
Dependent Claim
45 words
A thermal print head as recited in claim l, characterized in that the thickness of the polycrystalline silicon layer (3) forming the respective active layers (3c) of said super-thin polycrystalline silicon film transistors (4, 5, 6) is in the range of 20 to 800 Å.
Claim 4
Dependent Claim
42 words
A thermal print head as recited in claim l or 2, characterized in that the material forming said heating resistors (3B) is the same as that forming the respective active layers (3c) of said super-thin polycrystalline silicon film transistors (4, 5, 6).
Claim 5
Dependent Claim
40 words
A thermal print head as recited in claim 1 or 2,, characterized in that said heating resistors (2l) and the respective gate electrodes (7) of said super-thin polycrystalline silicon film transistors (4, 5, 6) are formed of the same material.
Claim 6
Dependent Claim
88 words
A thermal print head containing super-thin polycrystalline silicon film transistors, comprising: an insulating silicon substrate (l); a thermal resistance layer (2) formed on at least a part of the surface of the insulating silicon substrate (l); a thin polycrystalline silicon layer (3) formed on portions of the thermal resistance layer (2); heating resistors (3B, 2l) formed in the thin polycrystalline silicon layer (3); and a driving circuit comprising thin-film transistors (4, 5, 6) each having a thin active layer (3c), formed in the thin polycrystalline silicon layer (3).
Claim 7
Dependent Claim
88 words
A thermal print head containing super-thin polycrystalline silicon film transistors, comprising: an insulating silicon substrate (l); a thermal resistance layer (2) formed on at least a part of the surface of the insulating silicon substrate (l); a thin polycrystalline silicon layer (3) formed on portions of the thermal resistance layer (2); heating resistors (3B, 2l) formed in the thin polycrystalline silicon layer (3); and a driving circuit comprising thin-film transistors (4, 5, 6) each having a thin active layer (3c), formed in the thin polycrystalline silicon layer (3).
Claim 8
Dependent Claim
42 words
A thermal print head as recited in claim 5, characterized in that the thickness of the polycrystalline silicon layer (3) forming the respective active layers (3c) of said thin-film transistors (4, 5, 6) is in the range of 20 to 800 Å.
Claim 9
Dependent Claim
35 words
A thermal print head as recited in claim 5 or 6, characterized in that a convex second thermal resistance layer (22) is formed between each said heating resistor (3B) and said insulating silicon substrate (l).
Claim 10
Dependent Claim
28 words
A thermal print head as recited in any one of claims l to 7, characterized in that an oxidation protection layer (l2) covers each of said active layers.
Claim 11
Dependent Claim
41 words
A thermal print head as recited in any one of claims l to 8, characterized in that a layer (l3) of abrasion resistant material is applied over the areas of said resistors (3B, 2l) and said driving circuits (4, 5, 6).
References Cited (Backward Citations)
No citation records indexed.
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