EP0235682A2
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EP
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Aluminium nitride sintered body having conductive metallized layer
Assignee: Toshiba Corp
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Filing: 1987-02-19
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Granted: —
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Expires: 2007-02-19
Abstract
Abstract For higher thermal conductivity, stronger adhesion strength, excellent insulating characteristics, and multilayer interconnection, an aluminium sintered body for circuit substrates comprises a novel conductive metallized layer on the surface of the sintered body. The metallized layer comprises at least one element selected from the first group of Mo, W and Ta and at least one element selected from the second group of Ila, III, IVa group elements, lanthanide elements, and actinoide elements in periodic law table, as the conductive phase element. The first group element serves to improve the heat conduct i vity and resistance, while the second group serves to increase the wetness and adhesion strength between the insulating body and the metallized layer. Further, the plural insulating ceramic bodies and the plural metallized conductive layers can be sintered simultaneously being stacked one above the other to permit a multilayer interconnection.
Inventors
- 👤 Akihiro Horiguchi
- 👤 Mituo Kasori
- 👤 Fumio Ueno
- 👤 Hideki Sato
- 👤 Nobuyuki Mizunoya
- 👤 Mitsuyoshi Endo
- 👤 Shun-Ichiro Tanaka
- 👤 Kazuo Shinozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 06:02
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C04B41/45; C04B41/50; C04B41/5053; C04B41/5062; C04B41/5063; C04B41/5068; C04B41/51; C04B41/5133; C04B41/88; H; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H10W70/60; H10W70/62; H10W70/66; H10W70/67; H10W70/69; H10W70/692; H05; H05K; H05K1/00; H05K1/02; H05K1/09; H05K1/092; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917; Y10T428/24926
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
61 words
An aluminium nitride sintered body, comprising: (a) an insulating layer formed by sintering an aluminium nitride body; and (b) a metallized layer formed on said insulating layer, said metallized layer including: (1) a conductive element; and (2) at least one component element selected from the group consisting of IIa, IIIa, IVa, IIIb, lanthanide and actinoide group elements in periodic law table.
Claim 2
Dependent Claim
61 words
An aluminium nitride sintered body, comprising: (a) an insulating layer formed by sintering an aluminium nitride body; and (b) a metallized layer formed on said insulating layer, said metallized layer including: (1) a conductive element; and (2) at least one component element selected from the group consisting of IIa, IIIa, IVa, IIIb, lanthanide and actinoide group elements in periodic law table.
Claim 3
Dependent Claim
35 words
The aluminium nitride sintered body as set forth in claim 1, wherein said insulating layer includes at'least one element selected from the group consisting of alkaline earth and rare earth group elements as sentering aids.
Claim 4
Dependent Claim
23 words
The aluminium nitride sintered body as set forth in claim 1, wherein said aluminium nitride sintered body is used for a circuit substrate.
Claim 5
Dependent Claim
31 words
The aluminium nitride sintered body as set forth in claim 3, wherein said conductive element is at least one element selected from the group consisting of W, Mo, TiN and ZrN.
Claim 6
Dependent Claim
39 words
The aluminium nitride sintered body as set forth in claim 3, wherein said at least one component element is any one of a mixture and a compound of alumina and at least one of rare-earth elements and alkaline-earth elements.
Claim 7
Dependent Claim
55 words
The aluminium nitride sintered body as set forth in claim 1, wherein said conductive element is at least one element selected from the group consisting of Mo, W and Ta; and said at least one component element is at least one element selected from the group consisting of IIIa, IIIb, IVa and actinoide group elements.
Claim 8
Dependent Claim
22 words
The aluminium nitride sintered body as set forth in claim 1, wherein said insulating layer and said metallized layer are sintered simultaneously.
Claim 9
Dependent Claim
55 words
A circuit substrate comprising: (a) an insulating layer formed by sintering an aluminium nitride body; and (b) a conductive layer formed on said insulating layer, said conductive layer including: (1) a conductive substance; and (2) at least one of a mixture and a compound including alumina and at least one of rare-earth and alkaline-each elements.
Claim 10
Dependent Claim
55 words
A circuit substrate comprising: (a) an insulating layer formed by sintering an aluminium nitride body; and (b) a conductive layer formed on said insulating layer, said conductive layer including: (1) a conductive substance; and (2) at least one of a mixture and a compound including alumina and at least one of rare-earth and alkaline-each elements.
Claim 11
Dependent Claim
30 words
The circuit substrate as set for th in claim 8, wherein said conductive substance is at least one element selected from the group consisting of W, Mo, TiN and ZrN.
Claim 12
Dependent Claim
20 words
The circuit substrate as set forth in claim 8, wherein said insulating layer and said conductive layer are sintered simultaneously.
Claim 13
Dependent Claim
16 words
The circuit substrate as set forth in claim 10, where said conductive layer is a multilayer.
Claim 14
Dependent Claim
30 words
The circuit substrate as set forth in claim 8, wherein the content of the mixture and/or the compound is 0.05 to 20 wt.% in oxide conversion in said conductive layer.
Claim 15
Dependent Claim
32 words
The circuit substrate as set forth in claim 8, wherein the content of the rare-earth element and the alkaline-earth element is 0.01 to 15 wt.% in oxide conversion in said conductive layer.
Claim 16
Dependent Claim
20 words
The circuit substrate as set forth in claim 8, wherein said insulating layer includes aluminium nitride and a sintering aid.
Claim 17
Dependent Claim
33 words
The circuit substrate as set forth in claim 14, wherein said sintering aid is at least one of elements selected from the group consisting of Y, La, Ce, Ca, Sr, and B a.
Claim 18
Dependent Claim
33 words
The circuit substrate as set forth in claim 14, wherein the rare-earth and/or alkaline-earth elements included in said conductive layer are the same as the sintering aid elements included in said insulating layer.
Claim 19
Dependent Claim
32 words
The circuit substrate as set forth in claim 15, where the rare-earth and/or alkaline-earth element included in said conductive layer is at least one of Y, La, Ce, Ca, Sr, and Ba.
References Cited (Backward Citations)
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