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EP0234588A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Optical memory

Assignee: Toshiba Corp
•
Filing: 1987-02-27
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Granted: —
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Expires: 2007-02-27
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Abstract

Abstract In an optical memory (1) of phase transition type such that information is recorded or erased by reversibly changing the phase of a thin recording film between equilibrium phase and non-equilibrium phase in response to a laser beam, the memory is formed with a recording film (7) comprising as the main component an intermetallic compound with a melting point between 300 and 800°C in accordance with a binary target co-sputtering technique. Since the phase transition temperature of the recording film (7) is higherthan room temperatures, the recorded film can stably be kept in non-equilibrium phase state for a long time. Further, since the melting point thereof is lower than 800°C, it is possible to record or erase information in or from the medium in response to a relatively small power laser beam.

Inventors

  • 👤 Tadashi Kobayashi
  • 👤 Katsumi Suzuki
  • 👤 Naomasa Nakamura

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 20:24
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/26; G11B7/266; G11B7/241; G11B7/242; G11B7/243; G11B2007/24302; G11B2007/24304; G11B2007/24308; G11B2007/24312; G11B2007/24314; G11B2007/24316; G11B7/004; G11B7/0045; G11B7/00454

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 54 words
An optical memory (1) of phase transition type comprising: (a) a substrate (3); and (b) a recording layer (7) supported on said substrate (3), said recording layer (7) comprising an intermetallic compound with a melting point between 300 to 800°C capable of undergoing phase-changing between equilibrium phase and non-equilibrium phase when exposed to light.
Claim 2
Dependent Claim 54 words
An optical memory (1) of phase transition type comprising: (a) a substrate (3); and (b) a recording layer (7) supported on said substrate (3), said recording layer (7) comprising an intermetallic compound with a melting point between 300 to 800°C capable of undergoing phase-changing between equilibrium phase and non-equilibrium phase when exposed to light.
Claim 3
Dependent Claim 34 words
The optical memory as set forth in claim 1, wherein said intermetallic compound is a normal valency compound selected from the group consisting of AuSn, AuIn 2 , InSb, BiTe, SnAs CaSb, and GeTe.
Claim 4
Dependent Claim 57 words
The optical memory as set forth in claim 1, wherein said intermetallic compound is a size factor compound selected from the group consisting of AuPb 2 , PdGa 5 , KPb 2 , Au2Pb, KBi 2 , M g Zn 2' Mg 2 Ba, Au 2 Bi, Mg 2 Sr, Mg 2 Ca, and MuSn 2 .
Claim 5
Dependent Claim 38 words
The optical memory as set forth in claim 1, wherein said intermetallic compound is an electron compound selected from the group consisting of MgTl 2 , LiPb, CuGa 2 , Cu 5 Cd 8 , MgHg and AuZn.
Claim 6
Dependent Claim 24 words
The optical memory as set forth in claim 1, wherein said recording layer (7) comprises an intermetallic compound more than 80% by atomic percentage.
Claim 7
Dependent Claim 37 words
The optical memory as set forth in claim 1, wherein said intermetallic compound is formed as a thin film (7) on the substrate ( 3 ) in accordance with binary target co-sputtering technique using two different targets.
Claim 8
Dependent Claim 16 words
The optical memory as set forth in claim 1, wherein the light is a laser beam.
Claim 9
Dependent Claim 23 words
The optical memory as set forth in claim 6, wherein each of two electric powers applied to the two targets is controlled independently.

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