Opto-Electronic Device and Method for its Manufacture

Claim 1

A field effect transistor comprising: a semi-insulating semiconductor substrate (1), a first semiconductor layer (2), formed on said substrate (1) and serving as a channel region, two second semiconductor layers (3, 3), formed on source and drain regions of said first semiconductor layer (2), and made of a material different from that of said first semiconductor layer (2), two third semiconductor layers (4 1 , 42), formed on said second semiconductor layers (3, 3), made of a material different from that of said second semiconductor layers (3, 3), and doped with a high concentration impurity, source and drain electrodes (6 1 , 62), respectively formed on said third semiconductor layers (4 1 , 42), and a gate electrode (9), formed on a region on said first semiconductor layer (2) between said two third semiconductor layers (4 ,, 42 ) .

Claim 10

A method of manufacturing an opto-electronic integrated circuit device in which a light-emitting device and a field effect transistor are integrated on a substrate, comprising the steps of growing a first semiconductor layer (12), serving as a channel layer of a field effect transistor, on a semi-insulating semiconductor substrate (11), growing a second semiconductor layer (13), serving as an etching stopper layer and made of a material different from that of said first semiconductor layer (12) on said first semiconductor layer (12), growing a third semiconductor layer (14), serving as a first clad layer (14 1 ) of said light-emitting device and source and drain layers (14 2 , 14 3 ) with a high impurity concentration of said field effect transistor and made of a material different from that of said second semiconductor layer (13), on said second semiconductor layer (13), growing a fourth semiconductor layer (15) serving as an active layer (15 1 ) of said light-emitting device , and an etching mask (15 2 , 15 3 ) used when a gate region of said field effect transistor is recess-etched and made of a material different from that of said third semiconductor layer (14), selectively etching a region around said active layer (15 1 ) of said light-emitting device and said gate region of said field effect transistor of said fourth semiconductor layer (15), sequentially growing a fifth semiconductor layer (17) serving as a second clad layer of said light-emitting device and a sixth semiconductor layer (18) serving as a cap layer, selectively etching a region of said sixth and fifth semiconductor layers (18, 17) characterized in that said field effect transistor is formed, and subsequently etching said third semiconductor layer (1 4 ) exposed at said gate region using said fourth semiconductor layer (15) exposed at source and drain regions as a mask, thereby isolating source and drain layers (14 2 , 14 3 ) of said third semiconductor layer (14), forming source and drain electrodes (21 1 , 21 2 ) respectively on said source and drain layers (142, 14 3 ) with a high impurity concentration, and forming a gate electrode (22) on said first semiconductor layer (12) between said source and drain layers (14 2 , 14 3 ) with a high impurity concentration.

Claim 11

A method of manufacturing an opto-electronic integrated circuit device in which a light-emitting device and a field effect transistor are integrated on a substrate, comprising the steps of growing a first semiconductor layer (12), serving as a channel layer of a field effect transistor, on a semi-insulating semiconductor substrate (11), growing a second semiconductor layer (13), serving as an etching stopper layer and made of a material different from that of said first semiconductor layer (12) on said first semiconductor layer (12), growing a third semiconductor layer (14), serving as a first clad layer (14 1 ) of said light-emitting device and source and drain layers (14 2 , 14 3 ) with a high impurity concentration of said field effect transistor and made of a material different from that of said second semiconductor layer (13), on said second semiconductor layer (13), growing a fourth semiconductor layer (15) serving as an active layer (15 1 ) of said light-emitting device , and an etching mask (15 2 , 15 3 ) used when a gate region of said field effect transistor is recess-etched and made of a material different from that of said third semiconductor layer (14), selectively etching a region around said active layer (15 1 ) of said light-emitting device and said gate region of said field effect transistor of said fourth semiconductor layer (15), sequentially growing a fifth semiconductor layer (17) serving as a second clad layer of said light-emitting device and a sixth semiconductor layer (18) serving as a cap layer, selectively etching a region of said sixth and fifth semiconductor layers (18, 17) characterized in that said field effect transistor is formed, and subsequently etching said third semiconductor layer (1 4 ) exposed at said gate region using said fourth semiconductor layer (15) exposed at source and drain regions as a mask, thereby isolating source and drain layers (14 2 , 14 3 ) of said third semiconductor layer (14), forming source and drain electrodes (21 1 , 21 2 ) respectively on said source and drain layers (142, 14 3 ) with a high impurity concentration, and forming a gate electrode (22) on said first semiconductor layer (12) between said source and drain layers (14 2 , 14 3 ) with a high impurity concentration.