EP0232619A2
Expired / Lapsed
EP
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Method of manufacturing a thin-film transistor
Assignee: Canon Inc
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Filing: 1986-12-23
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Granted: —
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Expires: 2006-12-23
Abstract
Abstract There is provided an improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.
Inventors
- 👤 Shunichi Ishihara
- 👤 Hirokazu Ootoshi
- 👤 Masaaki Hirooka
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 23:38
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/24; H10P14/2922; H10P14/2923; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/057; Y10S148/169; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
137 words
An improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.
Claim 2
Dependent Claim
137 words
An improved thin-film transistor of which a principal semiconducting layer comprises a layer composed of an amorphous material prepared by (a) introducing (i) a gaseous substance containing atoms capable of becoming constituents for said layer into a film forming chamber having a substrate for thin-film transistor through a transporting conduit for the gaseous substance and (ii) a gaseous halogen series substance having a property to oxidize the gaseous substance into the film forming chamber through a transporting conduit for the gaseous halogen series oxidizing agent, (b) chemically reacting the gaseous substance and the gaseous halogen series agent in the film forming chamber in the absence of a plasma to generate plural kinds of precursors containing exited precursors and (c) forming said layer on the substrate with utilizing at least one kind of those precursors as a supplier.
Claim 3
Dependent Claim
18 words
An improved thin-film transistor according to Claim l, wherein the gaseous substance (i) is a chain silane compound.
Claim 4
Dependent Claim
19 words
An improved thin-film transistor according to Claim 2, wherein the chain silane compound is a straight chain silane compound.
Claim 5
Dependent Claim
34 words
An improved thin-film transistor according to Claim 3, the straight chain compound is a compound represented by the general formula: Si n H 2n+2 , wherein n is an integer of l to 8.
Claim 6
Dependent Claim
18 words
An improved thin-film transistor according to Claim 3, the chain silane compound is a branched chain silane compound.
Claim 7
Dependent Claim
18 words
An improved thin-film transistor according to Claim l, wherein the gaseous substance (i) is a cyclic silane compoun-d
Claim 8
Dependent Claim
17 words
An improved thin-film transistor according to Claim l, the gaseous substance (i) is a chain germane compound.
Claim 9
Dependent Claim
35 words
An improved thin-film transistor according to Claim 7, the chain germane compound is a compound represented by the general formula : Ge m H 2m+2 , wherein m is an integer of l to 5.
Claim 10
Dependent Claim
18 words
An improved thin-film transistor according to Claim l, wherein the gaseous substance (i) is a tetrahedral group compound.
Claim 11
Dependent Claim
31 words
l0. An improved thin-film transistor according to Claim l, the gaseous halogen series oxidizing agent (ii) is a halogen gas selected from the group consisting of F₂ gas and Cl₂ gas.
Claim 12
Dependent Claim
25 words
An improved thin-film transistor according to Claim l, the gaseous halogen series oxidizing agent (ii) is a gaseous substance containing fluorine atoms as its component.
Claim 13
Dependent Claim
21 words
An improved thin-film transistor according to Claim l, wherein the gaseous halogen series oxidizing agent (ii) is a nascent state halogen.
Claim 14
Dependent Claim
44 words
An improved thin-film transistor according to Claim l, wherein the surface of the substrate is placed so as to face the outlets of the transporting conduits for the gaseous substance (i) and the gaseous halogen series oxidizing agent (ii) in the film forming chamber.
Claim 15
Independent Claim
41 words
A method of making a thin-film transistor wherein at least a principal semiconducting layer of an amorphous material is formed on a substrate, characterised by chemically reacting adjacent to the surface of the substrate and in the absence of a plasma,
Claim 16
Independent Claim
41 words
A method of making a thin-film transistor wherein at least a principal semiconducting layer of an amorphous material is formed on a substrate, characterised by chemically reacting adjacent to the surface of the substrate and in the absence of a plasma,
Claim 17
Dependent Claim
14 words
(i) a gaseous substrate containing atoms capable of becoming constituents of said layer, and
Claim 18
Dependent Claim
14 words
(i) a gaseous substrate containing atoms capable of becoming constituents of said layer, and
Claim 19
Dependent Claim
18 words
(ii) a gaseous halogenic oxidising agent therefor, to form precursors for formation of the layer on the substrate.
Claim 20
Dependent Claim
18 words
(ii) a gaseous halogenic oxidising agent therefor, to form precursors for formation of the layer on the substrate.
References Cited (Backward Citations)
No citation records indexed.
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