EP0232082A2
Expired / Lapsed
EP
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Semiconductor deposition method and device
Assignee: University of Illinois at Urbana-Champaign
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Filing: 1987-01-22
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Granted: —
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Expires: 2007-01-22
Abstract
Abstract A method is disclosed of epitaxially depositing a semiconductor material (312) on a substrate (311) of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a [100] crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.
Inventors
- 👤 Hadis Morkoc
- 👤 Russ Fischer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 09:43
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/22; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/048; Y10S148/059; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
58 words
A method of forming a layer of semiconductor material on a substrate, the method comprising the steps of: providing a single crystalline silicon or germanium substrate (311,411,511) having a {100} crystallographic surface tilted in the <001> direction; and epitaxially depositing a different single crystalline semiconductor material over the surface to obtain a layer of the semiconductor material (312,412,512).
Claim 2
Independent Claim
58 words
A method of forming a layer of semiconductor material on a substrate, the method comprising the steps of: providing a single crystalline silicon or germanium substrate (311,411,511) having a {100} crystallographic surface tilted in the <001> direction; and epitaxially depositing a different single crystalline semiconductor material over the surface to obtain a layer of the semiconductor material (312,412,512).
Claim 3
Dependent Claim
17 words
A method according to claim 1, wherein the different single crystalline semiconductor material is a III-V semiconductor.
Claim 4
Dependent Claim
18 words
A method according to claim 1 or claim 2, wherein the angle of tilt is at least 2.29°.
Claim 5
Independent Claim
30 words
A method according to any of claims 1 to 3, further comprising epitaxially depositing a prelayer on the surface, the different single crystalline semiconductor material being deposited over the prelayer.
Claim 6
Dependent Claim
39 words
A method according to claim 4, when dependent on claim 3 and claim 2, wherein the prelayer comprises arsenic, and the different semiconductor material comprises gallium arsenide whereby a layer of gallium arsenide is obtained over the arsenic prelayer.
Claim 7
Dependent Claim
30 words
A method according to claim 5, further comprising the steps of epitaxially depositing intervening strained layers of III-V semiconductor material between the arsenic prelayer and the layer of gallium arsenide.
Claim 8
Independent Claim
20 words
A method according to any of the preceding claims, wherein the epitaxial depositing steps are performed by molecular beam epitaxy.
Claim 9
Dependent Claim
53 words
A semiconductor device comprising a single crystalline silicon or germanium substrate (311,411,511) having a {100} crystallographic surface tilted in the <001> direction; at least one layer (312,412,512) of III-V semiconductor material disposed over the surface; and a transistor device or light emitting device formed in at least one layer of III-V semiconductor material.
Claim 10
Dependent Claim
53 words
A semiconductor device comprising a single crystalline silicon or germanium substrate (311,411,511) having a {100} crystallographic surface tilted in the <001> direction; at least one layer (312,412,512) of III-V semiconductor material disposed over the surface; and a transistor device or light emitting device formed in at least one layer of III-V semiconductor material.
Claim 11
Dependent Claim
28 words
A semiconductor device according to claim 8, wherein the substrate is silicon and the at least one layer of III-V semiconductor material includes a layer of gallium arsenide.
Claim 12
Dependent Claim
20 words
A semiconductor device according to claim 8 or claim 9, wherein the angle of tilt is at least 2.29 degrees.
Claim 13
Dependent Claim
33 words
A semiconductor device according to any of claims 8 to 10, wherein a field-effect transistor (310) or a bipolar transistor (410) is formed in the at least one layer of III-V semiconductor material.
References Cited (Backward Citations)
No citation records indexed.
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