EP0228889A2
Expired / Lapsed
EP
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Low dielectric constant ceramic plate
Assignee: Fujitsu Ltd
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Filing: 1986-12-22
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Granted: —
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Expires: 2006-12-22
Abstract
Abstract A low dielectric constant ceramic plate comprised of 90 to 98% of mullite (3Al₂O₃·2SiO₂) and 10 to 2% of a sintering promotor comprised of 0.5 to 3% of magnesia (MgO) and 1.5 to 7% of calcium oxide (CaO).
Inventors
- 👤 Yasumasa Wakasugi
- 👤 Masahiro Sugimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 03:44
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/01; C04B35/16; C04B35/18; C04B35/195; H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
38 words
A low dielectric constant ceramic plate comprised of 90 to 98% of mullite and 10 to 2% of a sintering promotor, which promotor is comprised of 0.5 to 3% of magnesia and 1.5 to 7% of calcium oxide.
Claim 2
Dependent Claim
38 words
A low dielectric constant ceramic plate comprised of 90 to 98% of mullite and 10 to 2% of a sintering promotor, which promotor is comprised of 0.5 to 3% of magnesia and 1.5 to 7% of calcium oxide.
Claim 3
Dependent Claim
40 words
A ceramic plate according to claim 1, comprised of 94 to 96% of said mullite and 6 to 4% of said sintering promotor, which promotor is comprised of 1.6 to 2.4% of magnesia and 2.4 to 3.6% of calcium oxide.
Claim 4
Dependent Claim
18 words
A device comprising a semiconductor element carried on a ceramic plate according to claim 1 or claim 2.
Claim 5
Dependent Claim
15 words
A device according to claim 3 in which the element is an IC or LSI.
References Cited (Backward Citations)
No citation records indexed.
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