EP0227839B1
Expired / Lapsed
EP
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Method of forming a thin film
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-06-27
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Granted: 1991-05-15
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Expires: 2006-06-27
Abstract
Abstract Active halogen elements or active hydrogen atoms are generated by the photochemical reaction to remove and clean an oxide that is formed on a semiconductor surface. In the same apparatus, thereafter, a film is continuously formed relying by the photochemical reaction; i.e., a film is formed on the semiconductor surface without giving damage thereto.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Kazuo Urata
- 👤 Mamoru Tashiro
- 👤 Yuji Tanamura
- 👤 Shinji Imato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 22:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6504; G; G03; G03F; G03F7/00; G03F7/70; G03F7/708; G03F7/70908; G03F7/70925; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6512; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P70/00; H10P70/10; H10P70/12
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
99 words
A method of manufacturing a semiconductor device which includes the CVD formation of at least one thin film onto the surface of a III-V group compound semiconductor substrate characterized in that prior to the deposition of the thin film the semiconductor substrate surface is subjected to a cleaning step within the CVD apparatus for removal of surface contaminants, such cleaning step being effected by exposure of the substrate for a predetermined time period to active hydrogen and/or to an active halogen generated within the CVD apparatus by photodecomposition of a non-oxide hydride and/or halide introduced into the CVD apparatus.
Claim 2
Independent Claim
99 words
A method of manufacturing a semiconductor device which includes the CVD formation of at least one thin film onto the surface of a III-V group compound semiconductor substrate characterized in that prior to the deposition of the thin film the semiconductor substrate surface is subjected to a cleaning step within the CVD apparatus for removal of surface contaminants, such cleaning step being effected by exposure of the substrate for a predetermined time period to active hydrogen and/or to an active halogen generated within the CVD apparatus by photodecomposition of a non-oxide hydride and/or halide introduced into the CVD apparatus.
Claim 3
Dependent Claim
16 words
A method as claimed in claim 1 wherein said predetermined time period is about 30 minutes.
Claim 4
Dependent Claim
34 words
A method as claimed in claim 1 or 2 wherein the non-oxide hydride comprises ammonia or hydrazine and/or wherein the non-oxide halide comprises a nitrogen compound such as NF₃, N₂F₄, NCl₃, N₂Cl₄ for example.
Claim 5
Independent Claim
54 words
A method as claimed in any preceding claim wherein the thin film that is deposited on the semiconductor substrate is a nitride film and the cleaning step is effected by use of nitrogen hydride and/or halide so as to give rise to a degree of nitridation of the substrate surface during the cleaning step.
Claim 6
Independent Claim
21 words
A method as claimed in any preceding claim wherein the thin film is deposited at a temperature no greater than 250°C.
Claim 7
Independent Claim
26 words
A method as claimed in any preceding claim wherein the CVD formation of the at least one thin film is effected by photodecomposition of CVD constituents.
Claim 8
Dependent Claim
117 words
A method as claimed in claim 6 wherein a CVD apparatus is utilized for the cleaning and thin film deposition steps which comprises a reaction chamber (2), a substrate holder (1′) in the reaction chamber, and a light source (9) associated with the reaction chamber for effecting photodecomposition of cleaning and CVD constituents introduced into the reaction chamber, the light source being arranged to illuminate the reaction chamber through a transparent window (10) and the substrate holder (1′) being spaced from such window by such a distance that in the performance of the thin film deposition step the substrate surface to be coated by the thin film is spaced less than 3 cm from the window surface.
Claim 9
Independent Claim
107 words
A method as claimed in any of claims 1 to 6 wherein a CVD apparatus is utilized for the cleaning and thin film deposition steps which comprises a reaction chamber (2), a substrate holder (1′) in the reaction chamber, a gas supply system for the introduction of gaseous cleaning and CVD constituents into the reaction chamber, and a light source (9) associated with the reaction chamber (2) for effecting photodecomposition of cleaning and CVD constituents in the reaction chamber, the light source (9) being contained within a chamber (5) coupled to the reaction chamber and being arranged to illuminate the reaction chamber through a transparent louvre window.
Claim 10
Dependent Claim
45 words
A method as claimed in claim 8 wherein non-product gases involved in the performance of the method and which do not form solids by reaction or decomposition are introduced into the reaction chamber by way of the light source chamber (5) and the louvre window.
Claim 11
Dependent Claim
43 words
A method as claimed in claim 8 or 9 wherein in the performance of the thin film deposition step the substrate surface to be coated by the thin film is spaced less than 3 cm from the closest part of the louvre window.
References Cited (Backward Citations)
No citation records indexed.
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