Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
136 words
A semiconductor memory device comprising: a substrate having one conductivity type; a read only memory element formed in said substrate for storing fixed information, said element having a control gate, a floating gate, a source region, and a drain region, both of said regions having an opposite conductivity type to that of said substrate; a first region having said one conductivity type which surrounds said element; a light shield layer, connected to said source region and said first region, for covering said element; a second region having said opposite conductivity type which is located outside of said first region for taking out said drain region; and a well region having said opposite conductivity type, said well region linking said drain region and said second region, a part of said first region being formed in said well.
Claim 2
Dependent Claim
136 words
A semiconductor memory device comprising: a substrate having one conductivity type; a read only memory element formed in said substrate for storing fixed information, said element having a control gate, a floating gate, a source region, and a drain region, both of said regions having an opposite conductivity type to that of said substrate; a first region having said one conductivity type which surrounds said element; a light shield layer, connected to said source region and said first region, for covering said element; a second region having said opposite conductivity type which is located outside of said first region for taking out said drain region; and a well region having said opposite conductivity type, said well region linking said drain region and said second region, a part of said first region being formed in said well.
Claim 3
Dependent Claim
45 words
A semiconductor memory device according to claim 1, wherein said light shield layer is opened at the portion for taking out said control gate and said control gate is formed bent to match the connection portion of said light shield layer and said first region.
Claim 4
Dependent Claim
27 words
A semiconductor memory device according to claim 1, wherein said read only memory for storing fixed information is a read only memory for storing a malfunctional address.
Claim 5
Dependent Claim
29 words
A semiconductor memory device according to claim 1, wherein said read only memory for storing fixed information is a read only memory for storing hysteresis of a production process.
Claim 6
Dependent Claim
26 words
A semiconductor memory device according to claim 1, wherein said read only memory for storing fixed information is a read only memory for storing test data.
Claim 7
Dependent Claim
30 words
A semiconductor memory device according to claim 1, wherein said read only memory for storing fixed information is a read only memory for storing information on the types of devices.