EP0226772A2
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EP
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Method of manufacturing semiconductor substrates
Assignee: Toshiba Corp
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Filing: 1986-11-05
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Granted: —
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Expires: 2006-11-05
Abstract
Abstract A method of manufacturing a semiconductor substrate comprises a first step of preparing one hundred silicon bodies (20) each having two silicon wafers (20A, 20B) held together by cohesion after polishing and heating processes. The method further comprises a second step of stacking the silicon bodies (20) in their thickness direction to form a stacked body (30), and a third step of cylindrically grinding the side surface of the stacked body (30) by a predetermined amount.
Inventors
- 👤 Takehiko C/O Patent Division Nomura
- 👤 Yoshinori C/O Patent Division Natsume
- 👤 Yoshinori C/O Patent Division Hosoki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 19:11
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; B; B24; B24B; B24B9/00; B24B9/02; B24B9/06; B24B9/065; H10D; H10D62/00; H10D62/10; H10D62/117; H10P10/00; H10P10/12; H10P10/128; Y; Y10; Y10T; Y10T156/00; Y10T156/10; Y10T156/1052; Y10T156/1062; Y10T156/1064
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
129 words
A method of manufacturing a semiconductor substrate comprising a first step of polishing a pair of semiconductor wafers (20A, 20B) until a mirror surface is obtained in each semiconductor wafer (20A, 20B), and a second step of stacking said semiconductor wafers (20A, 20B) with the polished surfaces being opposed each other and thermally treating the stacked semiconductor wafers (20A, 20B) to form a semiconductor body (20), characterized by further comprising a third step of preparing a plurality of semiconductor bodies (20) each formed through said first and second steps, a fourth step of combining the plurality of semiconductor bodies (20) in their thickness direction to form a combined body (30), and a fifth step of cylindrically grinding the side surface of the combined body (30) by a predetermined amount.
Claim 2
Independent Claim
129 words
A method of manufacturing a semiconductor substrate comprising a first step of polishing a pair of semiconductor wafers (20A, 20B) until a mirror surface is obtained in each semiconductor wafer (20A, 20B), and a second step of stacking said semiconductor wafers (20A, 20B) with the polished surfaces being opposed each other and thermally treating the stacked semiconductor wafers (20A, 20B) to form a semiconductor body (20), characterized by further comprising a third step of preparing a plurality of semiconductor bodies (20) each formed through said first and second steps, a fourth step of combining the plurality of semiconductor bodies (20) in their thickness direction to form a combined body (30), and a fifth step of cylindrically grinding the side surface of the combined body (30) by a predetermined amount.
Claim 3
Dependent Claim
45 words
A method according to claim 1, characterized by further comprising a sixth step of coating an adhesive (28) on each semiconductor body (20) before said fourth step, and a seventh step of removing said adhesive (28) from the semiconductor bodies (20) after said fifth step.
Claim 4
Dependent Claim
17 words
A method according to claim 2, characterized in that said adhesive (28) is of a hot-melt type.
Claim 5
Dependent Claim
50 words
A method according to claim 3, characterized in that said fourth step includes a first substep of stacking each semiconductor body (20) coated with the hot-melt adhesive (28) on a heating plate (26) heated up to a predetermined temperature, and a second substep of cooling the stacked semiconductor bodies (20).
Claim 6
Dependent Claim
42 words
A method according to claim 2, characterized by further comprising an eighth step of plane-grinding the side surface of said combined body (30) after said fifth step and before said seventh step, thereby forming an orientation flat in each semiconductor body (20).
Claim 7
Dependent Claim
27 words
A method according to claim 5, characterized by further comprising a ninth step of adjusting each semiconductor body (20) into a predetermined thickness after said seventh step.
Claim 8
Dependent Claim
30 words
A method according to claim 1, characterized in that each semiconductor wafer (20A, 20B) has a surface form which projections higher than 0.05 µm are removed, through said first step.
Claim 9
Dependent Claim
30 words
A method according to claim 1, characterized in that said first step includes a first substep of heating the stacked semiconductor wafers (20A, 20B) at a temperature higher than 200°C.
Claim 10
Dependent Claim
24 words
A method according to claim 8, characterized in that said first substep is performed at a temperature of about 1100°C for about two hours.
Claim 11
Independent Claim
153 words
A method of manufacturing a semiconductor substrate comprising a first step of polishing a pair of semiconductor wafers (20A, 20B) until a mirror surface is obtained in each semiconductor wafer, and a second step of stacking said semiconductor wafers (20A, 20B) with the polished surfaces being opposed each other and thermally treating the stacked semiconductor wafers (20A, 20B) to form a semiconductor body (20), characterized by further comprising a third step of preparing a plurality of semiconductor bodies (20) each formed through said first and second steps, a fourth step of combining the plurality of semiconductor bodies (20) in their thickness direction to form a combined body (30), a fifth step of cylindrically grinding the side surface of the combined body (30) by a predetermined amount, a sixth step of plane-grinding the side surface of said combined body (30) after said fifth step, thereby forming an orientation flat in each semiconductor body (20).
Claim 12
Independent Claim
153 words
A method of manufacturing a semiconductor substrate comprising a first step of polishing a pair of semiconductor wafers (20A, 20B) until a mirror surface is obtained in each semiconductor wafer, and a second step of stacking said semiconductor wafers (20A, 20B) with the polished surfaces being opposed each other and thermally treating the stacked semiconductor wafers (20A, 20B) to form a semiconductor body (20), characterized by further comprising a third step of preparing a plurality of semiconductor bodies (20) each formed through said first and second steps, a fourth step of combining the plurality of semiconductor bodies (20) in their thickness direction to form a combined body (30), a fifth step of cylindrically grinding the side surface of the combined body (30) by a predetermined amount, a sixth step of plane-grinding the side surface of said combined body (30) after said fifth step, thereby forming an orientation flat in each semiconductor body (20).
Claim 13
Dependent Claim
27 words
A method according to claim 10, characterized by further comprising a seventh step of adjusting each semiconductor body (20) into a predetermined thickness after said sixth step.
References Cited (Backward Citations)
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