EP0225821A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having a silicon on insulator structure
Assignee: Fujitsu Ltd
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Filing: 1986-10-29
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Granted: —
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Expires: 2006-10-29
Abstract
Abstract A semiconductor device having a SOI structure comprises an insular single crystal silicon body (33) formed on an insulator layer (32), a first region (36) of a first type semiconductor and source and drain regions (34,35) of a second type semiconductor provided in the insular single crystal silicon body so that the first region is provided between the source and drain regions, a second region (39a, 39b) of the first type semiconductor in contact with the first region (36) and formed at least along a side of the source and drain regions, and a contact region (40) of the first type semiconductor having an impurity density higher than those of the first and second regions (36,39a,39b) and formed in contact with the second region, so that a fixed voltage can be applied to the first region (36) via the contact region (40).
Inventors
- 👤 Takehide Shirato
- 👤 Nobuhiko Aneha
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 23:45
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6708; H10D30/6711; H10D30/6706; H10D30/674; H10D30/6755; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; Y; Y10; Y10S; Y10S257/00; Y10S257/901
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
183 words
A semiconductor device having a silicon on insulator structure comprising: an insulator layer (32); an insular body (33) formed on said insulator layer, said insular body being made of a single crystal silicon doped to a first type semiconductor; a first region (36) of the first type semiconductor provided in said insular body; first and second doped regions (34,35) of a second type semiconductor respectively provided in said insular body on both sides of said first region, said first and second doped regions reaching a bottom of said insular body and having a width (W1) smaller than a width (W2) of said insular body; a second region (39a, 39b) of the first type semiconductor in contact with said first region (36) and formed along at least one side of said first and second doped regions; and a contact region (40;50;52;54;55) of the first type semiconductor formed in contact with said second region and having an impurity density greater than those of said first and second regions, so that a fixed voltage can be applied to said first region (36) via said contact region.
Claim 2
Dependent Claim
183 words
A semiconductor device having a silicon on insulator structure comprising: an insulator layer (32); an insular body (33) formed on said insulator layer, said insular body being made of a single crystal silicon doped to a first type semiconductor; a first region (36) of the first type semiconductor provided in said insular body; first and second doped regions (34,35) of a second type semiconductor respectively provided in said insular body on both sides of said first region, said first and second doped regions reaching a bottom of said insular body and having a width (W1) smaller than a width (W2) of said insular body; a second region (39a, 39b) of the first type semiconductor in contact with said first region (36) and formed along at least one side of said first and second doped regions; and a contact region (40;50;52;54;55) of the first type semiconductor formed in contact with said second region and having an impurity density greater than those of said first and second regions, so that a fixed voltage can be applied to said first region (36) via said contact region.
Claim 3
Dependent Claim
34 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 in which said second region (39a, 39b) is formed along both sides of said first and second doped regions (34,35).
Claim 4
Dependent Claim
51 words
A semiconductor device having a silicon on insulator structure as claimed in any one of claims 1 and 2 which further comprises a gate insulator layer (37) formed on said first region across a width direction of said insular body, and a gate electrode (38) formed on said gate insulator layer.
Claim 5
Dependent Claim
42 words
A semiconductor device having a silicon on insulator structure as claimed in claim 3 in which said contact region (40) is formed at such a position that an end portion of said gate insulator layer overlaps a portion of said contact region.
Claim 6
Dependent Claim
34 words
A semiconductor device having a silicon on insulator structure as claimed in claim 3 in which said contact region (50;52;54;55) is formed at such a position that avoids contact with said gate insulator layer.
Claim 7
Dependent Claim
32 words
A semiconductor device having a silicon on insulator structure as claimed in claim 1 in which said contact region (52;54;55) is formed at a position adjacent to said first doped region (34).
Claim 8
Dependent Claim
53 words
A semiconductor device having a silicon on insulator structure as claimed in claim 6 which further comprises an insulator layer (53) provided between said first doped region (34) and said contact region (52), said insulator layer between said second doped region and said contact region reaching the bottom of said insular body (33).
Claim 9
Dependent Claim
40 words
A semiconductor device having a silicon on insulator structure as claimed in any one of the preceding claims, in which said first and second doped regions (34,35) are source and drain regions of a metal oxide semiconductor field effect transistor.
Claim 10
Dependent Claim
98 words
A semiconductor device having a silicon on insulator structure as claimed in any one of the preceding claims which comprises a gate insulator layer (37) formed on said first region (36) across a width direction of said insulator body (33), a gate electrode (38) formed on said gate insulator layer, a source wiring (45) in contact with said first doped region (34), a drain wiring (46) in contact with said second doped region (35), a gate wiring (44) in contact with said gate electrode (38), and a contact wiring (47) in contact with said contact region (40; 50).
Claim 11
Dependent Claim
32 words
A semiconductor device having a silicon on insulator structure as claimed in any one of the preceding claims, in which said first and second type semiconductors are p-type and n-type semiconductors, respectively.
Claim 12
Dependent Claim
33 words
A semiconductor device having a silicon on insulator structure as claimed in any one of claims 1 to 9, in which said first and second type semiconductors are n-type and p-type semiconductors, respectively.
References Cited (Backward Citations)
No citation records indexed.
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