EP0225566A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Permeable gate transistor
Assignee: TDK Micronas GmbH
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Filing: 1986-11-28
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Granted: —
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Expires: 2006-11-28
Abstract
Abstract A field effect transistor comprises a semiconductor body having two major surfaces and including a substrate and an active region of one conductivity type forming a channel at one of the major surfaces. Elongated source and drain formations extend substantially parallel to a predetermined direction at the one major surface in juxtaposition with the active region and spaced from one another transversely to the predetermined direction. An elongated permeable gate formation is disposed at the one major surface between the source and drain formations in substantial parallelism with the predetermined direction and includes a plurality of gate portions situated at the semiconductor body and spaced from one another in the predetermined direction by predetermined distances to form intervening spaces, and a plurality of connecting portions integral with and interconnecting respective adjacent ones of the gate portions remotely from the body for supplying electric current to the gate portions for depleting respective individual depletion zones of the active region between the adjacent gate portions for controlling the flow of electric current in the channel between the source and drain formations.
Inventors
- 👤 Edward Lawrence Griffin
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 20:01
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D84/0167; H10D84/017; H10D84/0184
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
192 words
A field effect transistor comprising a semiconductor body (2) having two major surfaces and including a substrate and an active region (7) of one conductivity type forming a channel at one of said major surfaces; source and drain formations (5, 4) extending substantially parallel to a predetermined direction at said one major surface in juxtaposition with said active region (7) and spaced from one another transversely to said predetermined direction; and a permeable gate formation (6) disposed at said one major surface between said source and drain formations (5, 4) in substantial parallelism with said predetermined direction and including a plurality of gate portions (11) situated at said semiconductor body (2) and spaced from one another in said predetermined direction by predetermined distances to form intervening spaces (12), and a plurality of connecting portions integral with and interconnecting respective adjacent ones of said gate portions (11) remotely from said body for supplying electric current to said gate portions for depleting respective individual depletion zones of said active region at least between said adjacent gate portions for controlling the flow of electric current in said channel between said source and drain formations (5,4).
Claim 2
Dependent Claim
192 words
A field effect transistor comprising a semiconductor body (2) having two major surfaces and including a substrate and an active region (7) of one conductivity type forming a channel at one of said major surfaces; source and drain formations (5, 4) extending substantially parallel to a predetermined direction at said one major surface in juxtaposition with said active region (7) and spaced from one another transversely to said predetermined direction; and a permeable gate formation (6) disposed at said one major surface between said source and drain formations (5, 4) in substantial parallelism with said predetermined direction and including a plurality of gate portions (11) situated at said semiconductor body (2) and spaced from one another in said predetermined direction by predetermined distances to form intervening spaces (12), and a plurality of connecting portions integral with and interconnecting respective adjacent ones of said gate portions (11) remotely from said body for supplying electric current to said gate portions for depleting respective individual depletion zones of said active region at least between said adjacent gate portions for controlling the flow of electric current in said channel between said source and drain formations (5,4).
Claim 3
Dependent Claim
138 words
The transistor as defined in Claim 1, wherein said active region (7) has portions situated underneath said gate portions (11), at least such active region portions having a relatively small thickness to be completely depleted at a relatively low initial value of electric field emanating from said gate portions (11) with attendant reduction in capacitance, while said predetermined distances between said gate portions are such as to obtain, upon achieving such complete depletion of said active region portions, relatively high electric current flow through conduction zones of said channel situated intermediate said individual depletion zones and underneath said intervening spaces, and gradually diminishing electric current flow as the electric field values increase beyond said initial value with attendant spread of said individual depletion zones (17) at the expense of the respective conduction zones to underneath said intervening spaces.
Claim 4
Dependent Claim
22 words
The transistor as defined in Claim 1, wherein said predetermined distances between said gate portions (11) are substantially equal to one another.
Claim 5
Dependent Claim
35 words
The transistor as defined in Claim 1, and further comprising respective bodies of solid dielectric material substantially filling said intervening spaces (12) bounded by the respective adjacent gate and connecting portions of said gate formation.
Claim 6
Dependent Claim
29 words
The transistor as defined in Claim 1, wherein each of said gate portions (11) has a substantially rectangular cross section in a plane parallel to said one major surface.
Claim 7
Dependent Claim
34 words
The transistor as defined in Claim 5, wherein two sides of said rectangular cross section are substantially parallel to said predetermined direction and are closest to said source and drain formations (4, 5), respectively.
Claim 8
Dependent Claim
29 words
The transistor as defined in Claim 1, wherein each of said gate portions (11') has a substantially triangular cross section in a plane parallel to said one major surface.
Claim 9
Dependent Claim
57 words
The transistor as defined in Claim 7, wherein one side of said triangular cross section is substantially parallel to said predetermined direction and is closest to one of said source and drain formations (4, 5), while an opposite corner of said triangular cross section is closest to the other of said source and drain formations (4, 5).
Claim 10
Dependent Claim
34 words
The transistor as defined in Claim 1, wherein said connecting portions have delimiting surfaces which partially delimit said intervening spaces between said gate portions (11) and are substantially parallel to said one major surface.
References Cited (Backward Citations)
No citation records indexed.
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