EP0224680A2
Expired / Lapsed
EP
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Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
Assignee: International Business Machines Corp
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Filing: 1986-10-07
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Granted: —
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Expires: 2006-10-07
Abstract
Abstract The dissolution rate in alkaline developer solutions of image-wise exposed photoresist systems based on diazoquinone sensitized polyamic acid is reduced to prepare relief images of fine line resolution by reducing the acidity of the polyamic acid prior to exposure.
Inventors
- 👤 Kaolin Chion
- 👤 Ming-Fea Chow
- 👤 Wayne Moreau
- 👤 Nancy Ward Snyder
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 04:24
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/022; G03F7/023; G03F7/0233
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
17 words
A photoresist composition comprised of (a) a polyamic acid of reduced acidity and (b) a diazoquinone photosensitizer.
Claim 2
Dependent Claim
17 words
A photoresist composition comprised of (a) a polyamic acid of reduced acidity and (b) a diazoquinone photosensitizer.
Claim 3
Dependent Claim
29 words
The photoresist composition of Claim 1 wherein the polyamic acid is reduced in acidity to about 10 to about 40 percent of the original acidity of the polyamic acid.
Claim 4
Dependent Claim
19 words
The photoresist composition of Claim 1 wherein the polyamic acid of reduced acidity is a partially imidized polyamic acid.
Claim 5
Dependent Claim
25 words
The photoresist composition of Claim 3 wherein the polyamic acid is partially imidized to an imidization level of from about 20 to about 40 percent.
Claim 6
Dependent Claim
24 words
The photoresist composition of Claim 1 wherein the polyamic acid of reduced acidity is a mixture of polyamic acid and a basic organic compound.
Claim 7
Dependent Claim
37 words
The photoresist composition of Claim 1 wherein the polyamic acid or reduced acidity is a polyamic acid wherein a portion of the free carboxylic acid groups of the polyamic acid have been neutralized with an organic base.
Claim 8
Dependent Claim
12 words
The photoresist composition of Claim 6 wherein the organic base is triethylamine.
Claim 9
Dependent Claim
40 words
The photoresist composition of Claim 1 wherein the polyamic acid or reduced acidity is selected from the group consisting a blend of polyamic acid and its ester derivatives, a copolymer of polyamic acid and its ester derivatives and mixtures thereof.
Claim 10
Dependent Claim
32 words
The photoresist composition of Claim 1 wherein the diazoquinone photosensitizer is 2,3,4 - tri [(6 - diazo - 5,6 - dihydro - 5 - oxo - napthalenyl) sulfonyl - oxy] - benzophenone.
Claim 11
Dependent Claim
37 words
The photoresist composition of Claim 1 wherein the diazoquinone photosensitizer is 4,8 bis [(6 - diazo - 5,6 - dihydro - 5 - oxo - 1 - naphthalenyl) sulfonyl - oxy methyl] tricyclo [5.2.1.0 2,6 ] decane.
Claim 12
Dependent Claim
28 words
The photoresist composition of Claim 1 wherein the diazoquinone sensitizer is incorporated in the photoresist composition at a concentration of about 5 to about 25 percent by weight.
Claim 13
Dependent Claim
82 words
The photoresist composition of Claim 1 wherein the polyamic acid has the general formula wherein Q is C or C = OR is a divalent aromatic or aliphatic radical having no active hydrogen, R₁ is hydrogen or an alkyl group containing 1 to 3 carbon atoms, and R₂ and R₃ are independently selected from H, CH₃, C n H 2n+1 where n is a positive integer, and CF₃, m is an integer from 0 to 1 and p is a positive integer.
Claim 14
Dependent Claim
13 words
The photoresist composition of Claim 1 wherein the polyamic acid has the formula
Claim 15
Dependent Claim
68 words
A process for forming a resist mask comprising (a) coating on a substrate a layer comprised of a polyamic acid of reduced acidity and a diazoquinone sensitizer (b) image-wise exposing the layer to a source of radiation and then (c) developing the layer to remove the exposed portion of the layer in an alkaline developer solution whereby the exposed photoresist exhibits a reduced dissolution rate in the developer.
Claim 16
Dependent Claim
68 words
A process for forming a resist mask comprising (a) coating on a substrate a layer comprised of a polyamic acid of reduced acidity and a diazoquinone sensitizer (b) image-wise exposing the layer to a source of radiation and then (c) developing the layer to remove the exposed portion of the layer in an alkaline developer solution whereby the exposed photoresist exhibits a reduced dissolution rate in the developer.
Claim 17
Dependent Claim
28 words
The process of Claim 14 wherein the polyamic acid is reduced in acidity to about 10 to about 30 percent of the original acidity of the polyamic acid.
Claim 18
Dependent Claim
24 words
The process of Claim 14 wherein the polyamic acid of reduce acidity is prepared by partially imidizing the polyamic acid prior to radiation exposure.
Claim 19
Dependent Claim
24 words
The process of Claim 16 wherein the polyamic acid is partially imidized to an imidization level of from about 10 to about 30 percent.
Claim 20
Dependent Claim
23 words
The process of Claim 14 wherein the polyamic acid of reduced acidity is a mixture of polyamic acid and a basic organic compound.
Claim 21
Dependent Claim
37 words
The process of Claim 14 wherein the polyamic acid of reduced acidity is a polyamic acid wherein a portion of the free carboxylic acid groups of the polyamic acid are neutralized with triethylamine prior to radiation exposure.
Claim 22
Dependent Claim
41 words
The process of Claim 14 wherein the polyamic acid of reduced acidity is selected from the group consisting of a blend of polyamic acid and its ester derivatives and a copolymer of polyamic acid and its ester derivatives and mixtures thereof.
Claim 23
Dependent Claim
31 words
The process of Claim 14 wherein the diazoquinone photosensitizer is 2,3,4 - tri [(6 - diazo - 5,6 - dihydro - 5 - oxo - napthalenyl) sulfonyl - oxy] - benzophenone.
Claim 24
Dependent Claim
35 words
The process of Claim 14 wherein the diazoquinone photosensitizer is 4,8 - bis [6 - diazo - 5,6 - dihydro - 5 - oxo - 1 naphthalenyl) sulfonyl oxy methyl] tricyclo [5.2.1.0 2,6 ] decane.
Claim 25
Dependent Claim
27 words
The process of Claim 14 wherein the diazoquinone sensitizer is incorporated in the photoresist composition at a concentration of about 5 to about 25 percent by weight.
Claim 26
Dependent Claim
82 words
The process of Claim 14 wherein the polyamic acid has the general formula wherein Q is C or C = 0; R is a divalent aromatic or aliphatic radical having no active hydrogen, R₁ is hydrogen or an alkyl group containing 1 to 3 carbon atoms, and R₂ and R₃ are independently selected from H, CH₃, C n H 2n+1 where n is a positive integer, and CF₃, m is an integer from 0 to 1 and p is a positive integer.
Claim 27
Dependent Claim
12 words
The process of Claim 14 wherein the polyamic acid has the formula
Claim 28
Dependent Claim
39 words
The process of Claim 14 wherein the layer is image-wise exposed with ultraviolet light, and after exposure is baked at about 100° to about 130°C and blanket exposed with ultraviolet light whereby upon development a negative resist is produced.
References Cited (Backward Citations)
No citation records indexed.
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