EP0224313A2
Expired / Lapsed
EP
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Method for the optical recording of information and an optical recording element used in the method
Assignee: Koninklijke Philips NV
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Filing: 1986-11-24
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Granted: —
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Expires: 2006-11-24
Abstract
Abstract A method is provided for the optical recording of information in which an amorphous recording layer 4 having a composition according to formula (1) provided on a synthetic resin substrate (2) in a maximum layer thickness of 150 nm is exposed to infrared laser light having a wavelength of 750-900 nm and pulsed in accordance with the binary information to be recorded with a pulse time of at most 200 ns. A cystalline area 6 (bit) having maximum dimensions of a few micrometres is formed in the amorphous layer in the exposed places. As optical recording element is also provided for use in the method.
Inventors
- 👤 Dirk Jan Gravesteijn
- 👤 Carolus Johannes Van Der Poel
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 20:14
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/241; G11B7/242; G11B7/243; G11B2007/24302; G11B2007/2431; G11B2007/24314; G11B2007/24316; G11B7/004; G11B7/0045; G11B7/00454; G11B7/252; G11B7/253; G11B7/2531; G11B7/2533; G11B7/254; G11B7/2542; G11B7/257; G11B7/2572; Y; Y10; Y10S; Y10S430/00; Y10S430/146; Y10S430/165
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
190 words
A method for the optical recording of information in which a recording element which comprises a substrate and a recording layer provided thereon is exposed to laser light which is modulated in accordance with the information to be recorded, in which an optically readable change in structure occurs in the recording layer in the exposed places which is read by means of laser light via the substrate on the basis of reflection differences with the surroundings, characterized in that an amorphous recording layer having the composition [R x -Sb 1-x ] y Q 1-y (formula 1) wherein R is selected from the group formed by Ga and In, Q is selected from the group formed by Se and Te, or mixtures thereof provided on a synthetic resin substrate in a maximum thickness of 150 nm is exposed to infrared laser light having a wavelength of 750-900 nm which is pulsated in accordance with the binary (digital) information to be recorded with a pulse time of at most 200 ns, a crystalline area (bit) with maximum dimensions of a few micrometres being formed in the amorphous layer in the exposed places.
Claim 2
Independent Claim
190 words
A method for the optical recording of information in which a recording element which comprises a substrate and a recording layer provided thereon is exposed to laser light which is modulated in accordance with the information to be recorded, in which an optically readable change in structure occurs in the recording layer in the exposed places which is read by means of laser light via the substrate on the basis of reflection differences with the surroundings, characterized in that an amorphous recording layer having the composition [R x -Sb 1-x ] y Q 1-y (formula 1) wherein R is selected from the group formed by Ga and In, Q is selected from the group formed by Se and Te, or mixtures thereof provided on a synthetic resin substrate in a maximum thickness of 150 nm is exposed to infrared laser light having a wavelength of 750-900 nm which is pulsated in accordance with the binary (digital) information to be recorded with a pulse time of at most 200 ns, a crystalline area (bit) with maximum dimensions of a few micrometres being formed in the amorphous layer in the exposed places.
Claim 3
Dependent Claim
37 words
A method as claimed in Claim 1, characterized in that an amorphous recording layer of formula 1 is used in which R and y have the meanings given in Claim 1, Q is the element tellurium and
Claim 4
Dependent Claim
24 words
A method as claimed in Claim 1, characterized in that an amorphous layer of the formula is used, wherein x = 0.48 - 0.52.
Claim 5
Dependent Claim
96 words
An optical recording element suitable for use in the method as claimed in Claim 1, 2 or 3, characterized in that the recording element comprises a synthetic resin substrate or a substrate comprising a coating layer of a synthetic resin, that a recording layer is provided in a maximum thickness of 150 nm on the synthetic resin substrate, the recording layer comprising a recording material which satisfies the formula wherein R is selected from the group formed by Ga and In, Q is selected from the group formed by Se and Te, or the mixtures thereof.
References Cited (Backward Citations)
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