EP0224274A2
Expired / Lapsed
EP
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Semiconductor device with protective means against overheating
Assignee: Denso Corp
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Filing: 1986-11-28
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Granted: —
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Expires: 2006-11-28
Abstract
Abstract A semiconductor substrate (11) has a power region (12) and a control region (13). The control region (13) is located in the center portion of the substrate (11), and the power region (12) surrounds the control region (13) and is separated therefrom. A vertical type, MOS transistor (22), i.e., an active semiconductor element, is formed on the power region (12). An insulation film (24) is formed on part of the control region (13). A polycrystalline silicon diode (25), which functions as a heat-sensitive element, is formed on the insultation film (24). A control section comprising a lateral type, MOS transistor (26) is formed on the control region (13). The lateral type, MOS transistor (26) is connected to receive a signal from the polycrystalline silicon diode. (25). Further, a polycrystalline silicon resistor (271, which determines a circuit constant, is formed on the insultation film (24). The MOS transistor (26) protects the active semiconductor element in response to a signal suppled from said heat-sensitive element and show ing that the temperature of said semi-conductor substrate has risen above a predetermined value.
Inventors
- 👤 Yukio Tsuzuki
- 👤 Masami Yamaoka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 05:35
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/141; H10D84/143; H10D84/148; H10D89/00; H10D89/60; H10W; H10W40/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
161 words
A semiconductor device having a semiconductor substate, an active semiconductor element formed on the substrate, and a heat-sensitive element formed on the substrate for detecting the temperature of the substrate, characterized in that the active semiconductor element is protected from overheating when the heat-sensitive element detects that the temperature of the substrate has risen above a predetermined value, characterized in that said semiconductor substrate (11) has a power region (12) and a control region (13), a circuit including said active semiconductor element (22) is formed in the power region (12), an insulation film (24) is formed on at least a portion of the control region (13), said heat-sensitive element (25) being formed on the insulation film (24), and a control section (26) is formed in the control region (13) for protecting said active semiconductor element (22) in response to a signal supplied from said heat-sensitive element and showing that the temperature of said semiconductor substrate has risen above a predetermined value.
Claim 2
Dependent Claim
161 words
A semiconductor device having a semiconductor substate, an active semiconductor element formed on the substrate, and a heat-sensitive element formed on the substrate for detecting the temperature of the substrate, characterized in that the active semiconductor element is protected from overheating when the heat-sensitive element detects that the temperature of the substrate has risen above a predetermined value, characterized in that said semiconductor substrate (11) has a power region (12) and a control region (13), a circuit including said active semiconductor element (22) is formed in the power region (12), an insulation film (24) is formed on at least a portion of the control region (13), said heat-sensitive element (25) being formed on the insulation film (24), and a control section (26) is formed in the control region (13) for protecting said active semiconductor element (22) in response to a signal supplied from said heat-sensitive element and showing that the temperature of said semiconductor substrate has risen above a predetermined value.
Claim 3
Dependent Claim
37 words
A semiconductor device according to claim 1, characterized in that said control region (13) is located in the substantially center part of said semi- conductor substrate (11), and said power region (12) surrounds said control region (13).
Claim 4
Dependent Claim
51 words
A semiconductor device according to claim 1, characterized in that said heat-sensitive element (25) is comprised of a semiconductor element having a PN junction made of polycrystalline silicon formed on said insulation film (24), the forward voltage of said PN junction varying as the temperature of said semiconductor substrate (11) changes.
Claim 5
Dependent Claim
42 words
A semiconductor device according to claim 1, characterized in that said heat-sensitive element (25) is comprised of a plurality of polycrystalline silicon diodes connected in series and each having a PN junction made of polycrystalline silicon formed on said insulation film (24).
Claim 6
Dependent Claim
34 words
A semiconductor device according to claim 1, characterized in that said control section includes a plurality of resistors, at least one of which is a polycrystalline silicon resistor formed on said insulation film (24).
Claim 7
Dependent Claim
58 words
A semiconductor device according to claim 1, characterized in that said heat-sensitive element (25) is comprised of a PN junction made of polycrystalline silicon formed on said insulation film (24), a low impurity-concentration region within the P or N region of said PN junction having an impurity concentration of at least 1 x 10 19 cm - 3
Claim 8
Dependent Claim
18 words
A semiconductor device according to claim 6, characterized in that said low impurity-concentration region is doped with boron.
Claim 9
Dependent Claim
27 words
A semiconductor device according to claim 6, characterized in that said active semiconductor (22) formed in said power region (12) is a vertical type power MOS transistor.
Claim 10
Dependent Claim
41 words
A semiconductor device according to claim 1, characterized in that said control section includes a lateral type MOS transistor (26) formed in the surface region of said semiconductor substrate (11) and connected to receive a signal from said heat-sensitive element (25).
Claim 11
Dependent Claim
85 words
A semiconductor device according to claim 1, characterized in that said control region (13) is located in the substantially center part of said semi- condcutor substrate (11) and set apart from said power region (12), said heat-sensitive element is formed on said insulation film (24) and comprised of a polycrystalline silicon diode (25), and said control section comprising a lateral type MOS transistor (26) formed in that portion of the surface region of said substrate (11) on which said insulation film (24) is not formed.
References Cited (Backward Citations)
No citation records indexed.
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