EP0224189A2
Expired / Lapsed
EP
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Device having strain induced region
Assignee: AT&T Inc
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Filing: 1986-11-18
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Granted: —
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Expires: 2006-11-18
Abstract
Abstract This invention concerns with devices having a strain-induced region. Such devices include a substrate (e.g. l) and disposed thereon a first cladding layer (e.g. 3), an interleaved region (e.g. 5) of alternating first and second compositions comprising Ge x Si 1-x and Ge y Si 1-y , respectively, having different lattice constants and a lattice mismatch, wherein x is greater than y and 0.0 and less than or equal to l.0 and y is greater than or equal to 0.0 and less than l.0. Said mismatch is accommodated by strain which changes the bandgap from that of bulk compositions, said values of x and y being selected to provide for a desired bandgap.
Inventors
- 👤 John Condon Bean
- 👤 David Vern Lang
- 👤 Thomas Perine Pearsall
- 👤 Roosevelt People
- 👤 Henryk Temkin
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 13:31
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255; H10F77/00; H10F77/10; H10F77/14; H10F77/146; H10F77/1465
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
107 words
A device having a strain induced region comprising a substrate and disposed thereon a first cladding layer, an interleaved region of alternating first and second compositions comprising Ge x Si 1-x and Ge y Si 1-y , respectively, having different lattice constants and a lattice mismatch wherein x is greater than y and 0.0 and less than or equal to l.0 and y is greater than or equal to 0.0 and less than l.0, CHARACTERIZED IN THAT said mismatch being accommodated by strain which changes the bandgap from that of the bulk compositions, said values of x and y being selected to provide for a desired bandgap.
Claim 2
Independent Claim
107 words
A device having a strain induced region comprising a substrate and disposed thereon a first cladding layer, an interleaved region of alternating first and second compositions comprising Ge x Si 1-x and Ge y Si 1-y , respectively, having different lattice constants and a lattice mismatch wherein x is greater than y and 0.0 and less than or equal to l.0 and y is greater than or equal to 0.0 and less than l.0, CHARACTERIZED IN THAT said mismatch being accommodated by strain which changes the bandgap from that of the bulk compositions, said values of x and y being selected to provide for a desired bandgap.
Claim 3
Independent Claim
29 words
A device according to claim l, CHARACTERIZED IN THAT a second cladding layer is on the side of said interleaved region opposite to that of said first cladding layer.
Claim 4
Dependent Claim
19 words
A device according to claim 2, CHARACTERIZED IN THAT said first and second cladding layers have opposite conductivity types.
Claim 5
Dependent Claim
20 words
A device according to claim 3, CHARACTERIZED IN THAT x and y are essentially constant in said strained layer region.
Claim 6
Dependent Claim
17 words
A device according to claim 4, CHARACTERIZED IN THAT said first and second cladding layers comprise silicon.
Claim 7
Dependent Claim
26 words
A device according to claim 5, CHARACTERIZED IN THAT a third layer of silicon having intrinsic conductivity is between said second layer and said interleaved region.
Claim 8
Dependent Claim
28 words
A device according to claim 6, CHARACTERIZED IN THAT a fourth layer of silicon having a first conductivity type is between said third layer and said interleaved region.
Claim 9
Dependent Claim
15 words
A device according to claim 7, CHARACTERIZED IN THAT said first conductivity type is n-type.
Claim 10
Dependent Claim
17 words
A device according to claim 5, CHARACTERIZED IN THAT x is between approximately 0.4 and approximately 0.6.
Claim 11
Dependent Claim
23 words
l0. A device according to claim l, CHARACTERIZED IN THAT said substrate comprises Si and has an orientation selected from (l00) and (ll0).
References Cited (Backward Citations)
No citation records indexed.
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