EP0222215A2
Expired / Lapsed
EP
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Polysilicon MOS transistor and method of manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1986-10-22
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Granted: —
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Expires: 2006-10-22
Abstract
Abstract The presend invention relates to a semiconductor device including a MOS transistor which is formed with a source region (6; 6a), a drain region (6; 6a) and a channel region (7) by the use of polycrystalline silicon, and a method of amnufacturing the semiconductor device. Ions of carbon, oxygen or/and nitrogen are introduced into a polycrystalline silicon layer (3) over the whole area thereof, and restrain conductive ions in the source and drain regions (6; 6a) from diffusing into the channel region (7).
Inventors
- 👤 Ryuichi Saito
- 👤 Naohiro Momma
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 09:51
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10B; H10B10/00; H10B10/12; H10B10/125; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/834; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10P; H10P32/00; H10P32/30; H10P32/302
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
115 words
A semiconductor device having a MOS transistor element which is formed with a source region, a drain region and a channel region in a polycrystalline silicon layer on a semiconductor body, characterized in that said source region (6; 6a), drain region (6; 6a) and channel region (7) are all formed of polycrystalline silicon, that a conductive impurity is contained in said source region and drain region, and that at least one species of ions selected from the group consisting of oxygen, nitrogen and carbon ions are contained in said source region (6; 6a), drain region (6; 6a) and channel region (7) in order to restrain said conductive impurity from diffusing into said channel region (7).
Claim 2
Dependent Claim
115 words
A semiconductor device having a MOS transistor element which is formed with a source region, a drain region and a channel region in a polycrystalline silicon layer on a semiconductor body, characterized in that said source region (6; 6a), drain region (6; 6a) and channel region (7) are all formed of polycrystalline silicon, that a conductive impurity is contained in said source region and drain region, and that at least one species of ions selected from the group consisting of oxygen, nitrogen and carbon ions are contained in said source region (6; 6a), drain region (6; 6a) and channel region (7) in order to restrain said conductive impurity from diffusing into said channel region (7).
Claim 3
Independent Claim
78 words
A method of manufacturing a semiconductor device having a MOS transistor element which is formed with a source region (6; 6a), a drain region (6; 6a) and a channel region (7) in a polycrystalline silicon layer on a semiconductor body, characterized by comprising at least: a) the step of introducing at least one species of ions (4) selected from the group consisting of oxygen, nitrogen and carbon ions, into a whole area of said polycrystalline silicon layer (3).
Claim 4
Independent Claim
78 words
A method of manufacturing a semiconductor device having a MOS transistor element which is formed with a source region (6; 6a), a drain region (6; 6a) and a channel region (7) in a polycrystalline silicon layer on a semiconductor body, characterized by comprising at least: a) the step of introducing at least one species of ions (4) selected from the group consisting of oxygen, nitrogen and carbon ions, into a whole area of said polycrystalline silicon layer (3).
Claim 5
Independent Claim
124 words
A method of manufacturing a semiconductor device having a MOS transistor element which is formed with a source region (6; 6a), a drain region (6; 6a) and a channel region (7) in a polycrystalline silicon layer on a semiconductor body, characterized by comprising at least: a) the step of introducing at least one species of ions (4) selected from the group consisting of oxygen, nitrogen and carbon ions, into a whole area of said polycrystalline silicon layer (3), b) the step of introducing conductive impurity ions into respective regions which are to become said source region (6; 6a) and drain region (6; 6a), and c) the step of annealing the polycrystalline silicon layer which contains said ions introduced at said steps (a) and (b).
Claim 6
Independent Claim
124 words
A method of manufacturing a semiconductor device having a MOS transistor element which is formed with a source region (6; 6a), a drain region (6; 6a) and a channel region (7) in a polycrystalline silicon layer on a semiconductor body, characterized by comprising at least: a) the step of introducing at least one species of ions (4) selected from the group consisting of oxygen, nitrogen and carbon ions, into a whole area of said polycrystalline silicon layer (3), b) the step of introducing conductive impurity ions into respective regions which are to become said source region (6; 6a) and drain region (6; 6a), and c) the step of annealing the polycrystalline silicon layer which contains said ions introduced at said steps (a) and (b).
Claim 7
Dependent Claim
40 words
A method of manufacturing a semiconductor device as defined in claim 3, comprising between said step (a) and said step (b): d) the step of forming a gate electrode (9) on the polycrystalline silicon layer through an insulator film (5).
Claim 8
Dependent Claim
69 words
A method of manufacturing a semiconductor device as defined in claim 3, wherein at least one element among oxygen, nitrogen and carbon is introduced at a low concentration in the vicinity of an interface with an insulator film, within a region of said polycrystalline silicon layer to become said channel region (7), and it is introduced at a high concentration in the other part of said polycrystalline silicon layer.
Claim 9
Dependent Claim
33 words
A method of manufacturing a semiconductor device as defined in claim 3, wherein at least one element among oxygen, nitrogen and carbon is introduced at a concentration of 10¹⁹ atoms/cm³ - 10²² atoms/cm³.
References Cited (Backward Citations)
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