EP0217361A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Ion source
Assignee: Hitachi Ltd
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Filing: 1986-09-30
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Granted: —
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Expires: 2006-09-30
Abstract
Abstract An ion source for producing an ion beam utilized for fabrication and processing of semiconductors, thin films or the like includes a plasma producing chamber (1) equipped with first magnetic means (10a) for limiting a plasma region (20a) and a plasma expansion chamber (2) provided in combination with the plasma producing chamber (1) on the side where a beam extracting electrode (4) is disposed. The plasma expansion chamber (2) is provided with second magnet array (10b) for confining and holding a plasma region (20b) therein which is of a larger area than that of the plasma region (20a) formed in the plasma producing chamber (1).
Inventors
- 👤 Yasunori Ohno
- 👤 Tomoe Kurosawa
- 👤 Tadashi Sato
- 👤 Yukio Kurosawa
- 👤 Yoshimi Hakamata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 22:31
CPC Classifications
H; H01; H01J; H01J27/00; H01J27/02; H01J27/08; H01J27/14; H01J27/16; H01J27/18; H01J37/00; H01J37/02; H01J37/04; H01J37/08
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
131 words
An ion source comprising a plasma producing chamber (1) supplied with a gas (8) for producing a plasma through electric discharge, first magnetic means (10a, l4) provided in combination with said plasma producing chamber (1) for limiting a plasma region (20a) defined within said plasma producing chamber, and beam extracting means (4) for extracting an ion beam (7) from said plasma producing chamber (1), characterised in that a plasma expansion chamber (2) is provided in such a manner that said plasma producing chamber (1) is across the plasma expansion chamber from said beam extracting means (4), said plasma expansion chamber including second magnetic means (10b) for confining and holding a plasma region (20b) having an area larger than that of the plasma region (20a) formed within said plasma producing chamber (1).
Claim 2
Dependent Claim
131 words
An ion source comprising a plasma producing chamber (1) supplied with a gas (8) for producing a plasma through electric discharge, first magnetic means (10a, l4) provided in combination with said plasma producing chamber (1) for limiting a plasma region (20a) defined within said plasma producing chamber, and beam extracting means (4) for extracting an ion beam (7) from said plasma producing chamber (1), characterised in that a plasma expansion chamber (2) is provided in such a manner that said plasma producing chamber (1) is across the plasma expansion chamber from said beam extracting means (4), said plasma expansion chamber including second magnetic means (10b) for confining and holding a plasma region (20b) having an area larger than that of the plasma region (20a) formed within said plasma producing chamber (1).
Claim 3
Dependent Claim
33 words
An ion source according to claim 1, characterized in that the plasma is produced through high-frequency electric discharge, and that the first magnetic means (10a) is provided within said plasma producing chamber (1).
Claim 4
Dependent Claim
38 words
An ion source according to claim 2, characterised in that said high-frequency electric discharge is produced by supplying high-frequency power to a high-frequency coil (1l) installed within said plasma producing chamber (1) outside of said plasma region (20a).
Claim 5
Dependent Claim
18 words
An ion source according to claim 1, characterised in that the plasma is produced through microwave electric discharge.
Claim 6
Dependent Claim
32 words
An ion source according to any of claims 1 to 4, characterised by a plurality of said plasma producing chambers (1), each of which is provided with said plasma expansion chamber (2).
Claim 7
Dependent Claim
53 words
An ion source according to any of claims 1 to 5, characterised by a vacuum, container (17) disposed below said plasma expansion chamebr (2), said vacuum container including a rotatable holder (6) for mounting thereon a workpiece (5) to be processed by the ion beam (7) extracted through said beam extracting means (4).
References Cited (Backward Citations)
No citation records indexed.
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