EP0215436A2
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EP
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Method of growth of thin film layer for use in a composite semiconductor
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1986-09-09
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Granted: —
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Expires: 2006-09-09
Abstract
Abstract A method of the production of a composite semiconductor which comprises, a step of removing impurity molecules on a substrate or lower layer of the composite semiconductor by projecting III group molecular beam or V group molecular beam onto a substrate or a lower layer of the composite semiconductor before growth of an epitaxial layer thereon, and a step of growing a thin film layer of III group and V group atom composite semiconductor on the substrate or the lower layer of the composite semiconductor.
Inventors
- 👤 Yuichi Osaka Works Of Sumitomo Ltd. Matsui
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 09:54
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B23/00; C30B23/02; H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
85 words
A method of the production of a composite semiconductor which comprises, a step of removing impurity molecules on a substrate or lower layer of the composite semiconductor by projecting III group molecular beam or V group molecular beam onto a substrate or a lower layer of the composite semiconductor before growth of an epitaxial layer thereon, and a step of growing a thin film layer of III group and V group atom composite semiconductor on the substrate or the lower layer of the composite semiconductor.
Claim 2
Independent Claim
85 words
A method of the production of a composite semiconductor which comprises, a step of removing impurity molecules on a substrate or lower layer of the composite semiconductor by projecting III group molecular beam or V group molecular beam onto a substrate or a lower layer of the composite semiconductor before growth of an epitaxial layer thereon, and a step of growing a thin film layer of III group and V group atom composite semiconductor on the substrate or the lower layer of the composite semiconductor.
Claim 3
Dependent Claim
14 words
The method according to claim 1, wherein said substrate or lower layer is InP.
Claim 4
Dependent Claim
20 words
The method according to claim 1, wherein said III group molecular beam is In molecular beam or Ga molecular beam.
Claim 5
Dependent Claim
16 words
The method according to claim 1, wherein said V group molecular beam is Sb molecular beam.
Claim 6
Dependent Claim
43 words
The method according to claim 1, wherein the amount of projection of III group or V group molecular beam onto the substrate or lower layer of the composite semiconductor is less than the number of the molecule necessary to form 1 atomic layer.
Claim 7
Dependent Claim
35 words
the method according to claim 1, wherein the temperature of the substrate or lower layer of the composite semiconductor during projection of III group or V group molecular beam is 350 °C to 500 °C.
Claim 8
Independent Claim
109 words
A method of molecular epitaxial growth for growing single crystal on a substrate situated in a growing chamber by projecting material accommodated in a cell to the substrate under a high vacuum, comprising a step of keeping a temperature of the substrate after the material is applied to the substrate or keep a temperature after the substrate is heated up to a predetermined temperature, a step of removing excessive atoms which are present to form more than 1 atomic layer so that 1 atomic layer is formed on the substrate, and fitting a different material on the substrate so as to form a flat layer without projection and recess.
Claim 9
Independent Claim
109 words
A method of molecular epitaxial growth for growing single crystal on a substrate situated in a growing chamber by projecting material accommodated in a cell to the substrate under a high vacuum, comprising a step of keeping a temperature of the substrate after the material is applied to the substrate or keep a temperature after the substrate is heated up to a predetermined temperature, a step of removing excessive atoms which are present to form more than 1 atomic layer so that 1 atomic layer is formed on the substrate, and fitting a different material on the substrate so as to form a flat layer without projection and recess.
Claim 10
Dependent Claim
152 words
The method according to claim 7, wherein said substrate is InP substrate and Ga material is fitted onto the substrate with 1 atomic thick under the InP substrate temperature of 300 °C to 500 °C in A S4 or A S2 atmosphere, subsequently the temperature of the substrate is kept between 400 °C to 600 °C so that the excessive Ga atoms on the most surface in which 1 atomic layer is not completed are removed to form a complete 1 atomic thick GaAs layer, then in turn the substrate temperature is kept 250 °C to 450 °C, subsequently, In material is fitted more than 1 atomic thick keeping the substrate temperature between 400 °C to 500 °C then the excessive In atoms on the most surface in which 1 atomic layer is not completed are removed to form a complete 1 atomic thick InAs layer and to repeat the above processes.
References Cited (Backward Citations)
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