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EP0214805A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Sensor using a field effect transistor and method of fabricating the same

Assignee: Panasonic Holdings Corp
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Filing: 1986-08-26
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Granted: —
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Expires: 2006-08-26
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Abstract

Abstract Disclosed is a sensor using a field effect transistor. The sensor includes a field effect transistor having a gate electrode, a reactive monomolecular film formed on the surface of the gate electrode, and a sensing material fixed on the gate electrode through the reactive monomolecular film by the chemical bond. The sensing material is strongly bonded to the reactive monomolecular film in such manner that the sensing material is kept alive. Thereby, sensitivity of the sensor is improved.

Inventors

  • 👤 Kazufumi Ogawa

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 11:21
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; G01N27/4145; B; B82; B82Y; B82Y10/00; B82Y15/00; B82Y30/00; B82Y40/00; Y; Y10; Y10S; Y10S438/00; Y10S438/939

Claims Analysis

Total Claims: 23
Claim 1
Independent Claim 60 words
A sensor comprising: a field effect transistor having a gate electrode; a reactive monomolecular film formed on the surface of said electrode; and a sensing material fixed on said gate electrode through said reactive monomolecular film by the chemical bond, said sensing material being bonded to said reactive monomolecular film in such manner that said sensing material is kept active.
Claim 2
Dependent Claim 60 words
A sensor comprising: a field effect transistor having a gate electrode; a reactive monomolecular film formed on the surface of said electrode; and a sensing material fixed on said gate electrode through said reactive monomolecular film by the chemical bond, said sensing material being bonded to said reactive monomolecular film in such manner that said sensing material is kept active.
Claim 3
Dependent Claim 38 words
The sensor of cliam 1, wherein said reactive monomolecular film have a vinyl group or an acetylene group at one end, and has a chlorosilane group formed at the other end by using a straight chain hydrocarbon molecular.
Claim 4
Dependent Claim 38 words
The sensor of cliam 1, wherein said reactive monomolecular film have a vinyl group or an acetylene group at one end, and has a chlorosilane group formed at the other end by using a straight chain hydrocarbon molecular.
Claim 5
Dependent Claim 15 words
The sensor of claim 1, wherein said sensing material is one of proteins and enzymes.
Claim 6
Independent Claim 107 words
A method for making a sensor comprising the steps of: forming a field effect transistor on a semiconductor substrate, said field effect transistor having a gate electrode; forming a photoresist layer on said semiconductor substrate except the portion of said gate electrode; forming a reactive monomolecular film on the surface of said gate electrode, said reactive monomolecular film being formed by means of silane surface active agent; transforming the reactive group of said silane surface active agent into a hydroxyl group; transforming said hydroxyl group into an aldehyde group; fixing a sensing material made of proteins or enzymes to said aldehyde group; and removing said photoresist layer.
Claim 7
Independent Claim 107 words
A method for making a sensor comprising the steps of: forming a field effect transistor on a semiconductor substrate, said field effect transistor having a gate electrode; forming a photoresist layer on said semiconductor substrate except the portion of said gate electrode; forming a reactive monomolecular film on the surface of said gate electrode, said reactive monomolecular film being formed by means of silane surface active agent; transforming the reactive group of said silane surface active agent into a hydroxyl group; transforming said hydroxyl group into an aldehyde group; fixing a sensing material made of proteins or enzymes to said aldehyde group; and removing said photoresist layer.
Claim 8
Dependent Claim 22 words
The method of claim 4, wherein said reactive monomolecular film is fixed to the surface of gate electrode by chemical adsorption process.
Claim 9
Independent Claim 21 words
The method of cliam 4, wherein said reactive monomolecular film is fixed to the surface of gate electrode by Langmuir-Blodgett process.
Claim 10
Independent Claim 21 words
The method of cliam 4, wherein said reactive monomolecular film is fixed to the surface of gate electrode by Langmuir-Blodgett process.
Claim 11
Dependent Claim 67 words
A sensor comprising: a field effect transistor having a gate electrode; a hydrophilic polymer photosensitive thin film formed on the surface of said gate electrode; and a sensing material fixed on said gate electrode through said hydrophilic polymer photosensitive thin film by the chemical bond, said sensing material being bonded to said hydrophilic polymer photosensitive thin film in such manner that said sensing material is kept active.
Claim 12
Dependent Claim 67 words
A sensor comprising: a field effect transistor having a gate electrode; a hydrophilic polymer photosensitive thin film formed on the surface of said gate electrode; and a sensing material fixed on said gate electrode through said hydrophilic polymer photosensitive thin film by the chemical bond, said sensing material being bonded to said hydrophilic polymer photosensitive thin film in such manner that said sensing material is kept active.
Claim 13
Dependent Claim 22 words
The sensor of cliam 7, wherein said hydrophilic polymer photosensitive thin film contains a substance having a hydroxyl group or carboxylic group.
Claim 14
Dependent Claim 22 words
The sensor of cliam 7, wherein said hydrophilic polymer photosensitive thin film contains a substance having a hydroxyl group or carboxylic group.
Claim 15
Dependent Claim 15 words
The sensor of claim 7, wherein said sensing material is one of protein and enzyme.
Claim 16
Dependent Claim 27 words
The sensor of claim 9, wherein chemical bonding between said hydrophilic polymer photosensitive thin film and protein or enzyme is effected by way of the bond of
Claim 17
Dependent Claim 32 words
The sensor of claim 7, wherein said hydrophilic polymer photosensitive thin film contains polysaccharide such as pectin, protein such as casein, and water-soluble synthetic polymer such as polyvinyl alcohol and polyvinyl pyrrolidone.
Claim 18
Dependent Claim 38 words
The sensor of calim 7, wherein an optical crosslinking agent of said hydrophilic photosensitive thin film is dichromate such as ammonium dichromate, or diazo compound such as diazo resin, or diazide compound such as 4,4'-diazidestylben-2,2'- disulfonicacid sodium salt.
Claim 19
Dependent Claim 38 words
The sensor of calim 7, wherein an optical crosslinking agent of said hydrophilic photosensitive thin film is dichromate such as ammonium dichromate, or diazo compound such as diazo resin, or diazide compound such as 4,4'-diazidestylben-2,2'- disulfonicacid sodium salt.
Claim 20
Independent Claim 101 words
A method for making a sensor comprising the steps of: forming a field effect transistor on a semiconductor substrate, said field effect transistor having a gate electrode; forming a hydrophilic polymer photosensitive thin film on said semiconductor substrate; removing said hydrophilic polymer photo- sensitivie thin film from said semiconductor substrate except the portion on said gate electrode by use of a mask having an opening which corresponds to said gate electrode; transforming the sensing group of said hydrophilic high polymer photosensitive thin film into an aldehyde group; and fixing a sensing material composed or protein or enzyme to said aldehyde group.
Claim 21
Independent Claim 101 words
A method for making a sensor comprising the steps of: forming a field effect transistor on a semiconductor substrate, said field effect transistor having a gate electrode; forming a hydrophilic polymer photosensitive thin film on said semiconductor substrate; removing said hydrophilic polymer photo- sensitivie thin film from said semiconductor substrate except the portion on said gate electrode by use of a mask having an opening which corresponds to said gate electrode; transforming the sensing group of said hydrophilic high polymer photosensitive thin film into an aldehyde group; and fixing a sensing material composed or protein or enzyme to said aldehyde group.
Claim 22
Independent Claim 110 words
A method for making a sensor comprising the steps of : forming a field effect transistor on a semiconductor substrate, said field effect transistor having a gate electrode; forming a reactive monomolecular film on surface of said semiconductor substrate, said reactive monomolecular film being formed by means of silane surface active agent; exposing said reactive monomolecular film with energy beam leaving only a portion on said gate electrode to deactivate said reactive monomolecular film; transforming the reactive group of said silane surface active agent into a hydroxyl group; transforming said hydroxyl group into an aldehyde group; and fixing a sensing material made of proteins or enzymes to said aldehyde group.
Claim 23
Independent Claim 110 words
A method for making a sensor comprising the steps of : forming a field effect transistor on a semiconductor substrate, said field effect transistor having a gate electrode; forming a reactive monomolecular film on surface of said semiconductor substrate, said reactive monomolecular film being formed by means of silane surface active agent; exposing said reactive monomolecular film with energy beam leaving only a portion on said gate electrode to deactivate said reactive monomolecular film; transforming the reactive group of said silane surface active agent into a hydroxyl group; transforming said hydroxyl group into an aldehyde group; and fixing a sensing material made of proteins or enzymes to said aldehyde group.

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