EP0214512A2
Expired / Lapsed
EP
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Expitaxially grown isolation device
Assignee: Eastman Kodak Co
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Filing: 1986-08-19
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Granted: —
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Expires: 2006-08-19
Abstract
Abstract There is disclosed a device and method of making such, for isolating active elements of an integrated circuit on a substrate. The device comprises a trench filling of epitaxially grown semiconductor material fused with the substrate at the bottom of the filling. The fused semiconductor material is laterally spaced away from the substrate, the lateral space between the trench filling and the substrate on both sides of the filling comprising i) a layer of an oxide of the substrate; and ii) a layer of a first material effective to protect the materials under the first material layer from attack during the formation of the filling of epitaxially grown material.
Inventors
- 👤 Gerrit Lubberts
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 16:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/27; H10P14/271; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
110 words
In an integrated circuit constructed on a single crystal substrate, an isolation device between active elements of the circuit and within said substrate, the device comprising a trench filling of epitaxially grown semiconductor material fused with said substrate at the bottom of said filling, said fused semiconductor material being laterally spaced away from said substrate, and in the lateral space between said trench filling and said substrate, on both sides of said filling, i) a layer of an oxide of said substrate; and ii) a layer of a first material effective to protect the materials under said first material layer from attack during the formation of said epitaxially grown filling.
Claim 2
Dependent Claim
110 words
In an integrated circuit constructed on a single crystal substrate, an isolation device between active elements of the circuit and within said substrate, the device comprising a trench filling of epitaxially grown semiconductor material fused with said substrate at the bottom of said filling, said fused semiconductor material being laterally spaced away from said substrate, and in the lateral space between said trench filling and said substrate, on both sides of said filling, i) a layer of an oxide of said substrate; and ii) a layer of a first material effective to protect the materials under said first material layer from attack during the formation of said epitaxially grown filling.
Claim 3
Dependent Claim
41 words
An isolation device as described in claim 1, and further including, between said trench filling and said layer of first material, a layer of a second material effective to retard nucleation of said semiconductor material on said layer of first material.
Claim 4
Dependent Claim
32 words
An isolation device as described in claim 2, wherein said substrate and said grown semiconductor material is silicon, said first material is Si₃N₄, and said second material is low temperature silicon oxide.
Claim 5
Dependent Claim
22 words
A device as described in claim 3, wherein said Si₃N₄ is confined to segments having an L-shape when viewed in transverse cross-section.
Claim 6
Dependent Claim
121 words
A process for making an isolation device in an integrated circuit between active elements of the circuit and within a single crystal substrate of said circuit, the process comprising the steps of a) etching a trench in said substrate, b) forming an oxide on said substrate along the sidewalls of said trench, c) depositing overall a layer of a first material effective to protect the materials under said first material layer from attack during the formation of said filling of epitaxially grown material, d) etching out said layers of first material, and second material, if any, at the bottom of said trench, and e) epitaxially growing semiconductor material in said trench, fused to said substrate at the bottom of said trench.
Claim 7
Dependent Claim
121 words
A process for making an isolation device in an integrated circuit between active elements of the circuit and within a single crystal substrate of said circuit, the process comprising the steps of a) etching a trench in said substrate, b) forming an oxide on said substrate along the sidewalls of said trench, c) depositing overall a layer of a first material effective to protect the materials under said first material layer from attack during the formation of said filling of epitaxially grown material, d) etching out said layers of first material, and second material, if any, at the bottom of said trench, and e) epitaxially growing semiconductor material in said trench, fused to said substrate at the bottom of said trench.
Claim 8
Dependent Claim
49 words
A process as defined in claim 5, and further including, between said steps c) and d) the step of depositing overall a layer of a second material effective to retard nucleation of semiconductor material onto said layer of first material when epitaxial semiconductor material is deposited in said trench.
Claim 9
Dependent Claim
31 words
A process as defined in claim 5, wherein said substrate and said grown semiconductor material is silicon, said first material is Si₃N₄, and said second material is low temperature silicon oxide.
Claim 10
Dependent Claim
22 words
A process as defined in claim 7, wherein said Si₃N₄ is confined to segments having an L-shape when viewed in transverse cross-section.
References Cited (Backward Citations)
No citation records indexed.
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