Solid-state image sensor

Claim 1

A solid-state image sensor comprising: a photoconductive film (15) for converting incident light rays to electrical charges; a semiconductor substrate (1) having storage sections (2) corresponding to pixels for storing charges and a transfer section (3) for transferring the charges from the storage sections in the form of output image signals; first electrodes (5) each having one end connected to the corresponding storage section (2) and insulated from the transfer section (3), said first electrodes (5) being arranged at predetermined intervals and extending above a semiconductor substrate (1); an insulating film (6, 8) formed on the first electrodes (7) and having a flat surface; second electrodes (11) formed on the flat surface of the first insulating film (6, 8), arranged at predetermined intervals and electrically connected to the first electrodes (5), said photoconductive film (15) being formed on these second electrodes (11); and a barrier layer formed on the photoconductive film (15), forming a barrier protecting the photoconductive film (15); a transparent third electrode (16) formed on the barrier layer; characterized by further comprising: fourth electrodes (9) formed on the first insulating film (6, 8), electrically connected to one another and electrically insulated from the second electrodes (12), each of fourth electrodes (9) having a peripheral region facing the adjacent second electrodes (12); and semiconductor layer (10) formed on the fourth electrodes (9) for preventing one of electrons and holes from passing through the semiconductor layer (10) from the fourth electrode (9) to the photoconductive film (15), allowing the one to pass through the semiconductor layer (10) from the photoconductive film (15) to the fourth electrode (9), said semiconductor layer (10) and said photoconductive film (15) forming a diode structure.