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EP0213705A2
Expired / Lapsed
EP
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A semiconductor laser device
Assignee: Sharp Corp
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Filing: 1986-07-15
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Granted: —
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Expires: 2006-07-15
Abstract
Abstract A semiconductor laser device comprising an Al x Ga 1 x As (x≧0.31 quantum well active region having a thickness of 200 A or less, Al y Ga 1 y As (y-x) carrier supplying layers sandwiching said quantum well active region therebetween, and an Al x Ga 1 x As (z>y) cladding layer disposed on each of said carrier supplying layers, wherein an Al w Ga 1 wAs (w>z) barrier layer is disposed between each of said carrier supplying layers and each of said cladding layers.
Inventors
- 👤 Saburo Yamamoto
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kohsei Takahashi
- 👤 Masafumi Kondo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 18:43
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; B; B82; B82Y; B82Y20/00; H01S5/3432
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
85 words
A semiconductor laser device, characterised by an Al x Ga 1-x As (x≧0.3) quantum well active region having a thickness of 200 A or less, Al y Ga 1-y As (y>x) carrier supplying layers sandwiching said quantum well active region therebetween, and an Al z Ga 1-z As (z>y) cladding layer disposed on each of said carrier supplying layers, and wherein an Al w Ga 1-w As (w>z) barrier layer is disposed between each of said carrier supplying layers and each of said cladding layers.
Claim 2
Dependent Claim
85 words
A semiconductor laser device, characterised by an Al x Ga 1-x As (x≧0.3) quantum well active region having a thickness of 200 A or less, Al y Ga 1-y As (y>x) carrier supplying layers sandwiching said quantum well active region therebetween, and an Al z Ga 1-z As (z>y) cladding layer disposed on each of said carrier supplying layers, and wherein an Al w Ga 1-w As (w>z) barrier layer is disposed between each of said carrier supplying layers and each of said cladding layers.
Claim 3
Dependent Claim
26 words
A semiconductor laser device as claimed in claim 1, wherein said quantum well active region is an Al x Ga 1-x As single quantum well layer.
Claim 4
Dependent Claim
35 words
A semiconductor laser device as claimed in claim 1, wherein said quantum well active region is a multi-layered quantum well which is composed of alternate layers consisting of AlGaAs quantum wells and AlGaAs barrier layers.
References Cited (Backward Citations)
No citation records indexed.
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