EP0209668A2
Expired / Lapsed
EP
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Thin film electroluminescence devices and process for producing the same
Assignee: Sharp Corp
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Filing: 1986-05-22
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Granted: —
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Expires: 2006-05-22
Abstract
Abstract The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/ or moisture and subjecting the film to a heat treatment at a temperature of 200°C to 700°C so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom raito (F/RE) in the range of 0.5 to 2.5. The present invention affords a thin film EL device which emits, for example, a green luminescence with a high brightness.
Inventors
- 👤 Takashi Ogura
- 👤 Koichi Tanaka
- 👤 Koji Taniguchi
- 👤 Masaru Yoshida
- 👤 Akiyoshi Mikami
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 12:55
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/18; Y; Y10; Y10S; Y10S428/00; Y10S428/917
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
71 words
A thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5.
Claim 2
Dependent Claim
71 words
A thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5.
Claim 3
Dependent Claim
24 words
A thin film EL device as defined in claim 1 wherein the atom ratio (F/RE) is adjusted to the range of 1.0 to 2.0.
Claim 4
Dependent Claim
24 words
A thin film EL device as defined in claim 1 wherein the host material of the emitting layer is ZnS, ZnSe, CaS or CdS.
Claim 5
Dependent Claim
20 words
A thin film EL device as defined in claim 1 wherein the host material of the emitting layer is ZnS.
Claim 6
Dependent Claim
20 words
A thin film EL device as defined in claim 1 wherein the rare-earth element is Tb, Sm, Tm or Pr.
Claim 7
Dependent Claim
16 words
A thin film EL device as defined in claim 1 wherein the rare-earth element is Tb.
Claim 8
Dependent Claim
31 words
A thin film E L device as defined in claim 4 wherein the host material is doped with 1 to 5 mole % of TbF 3 before forming the emitting layer.
Claim 9
Dependent Claim
94 words
A process for producing a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the process comprising forming the emitting layer from a material composed of a host material and a dopant under a condition substantially free from oxygen gas and/or moisture so that the emitting layer formed contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5.
Claim 10
Dependent Claim
94 words
A process for producing a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the process comprising forming the emitting layer from a material composed of a host material and a dopant under a condition substantially free from oxygen gas and/or moisture so that the emitting layer formed contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5.
Claim 11
Dependent Claim
22 words
A process as defined in claim 8 wherein the emitting layer formed is annealed at a temperature of 200 to 700° C.
Claim 12
Dependent Claim
21 words
A process as defined in claim 8 wherein the atom ratio (F/RE) is adjusted to the range of 1.0 to 2.0.
Claim 13
Dependent Claim
17 words
A process as defined in claim 8 wherein the host material is ZhS, ZnSe, CaS or CdS.
Claim 14
Dependent Claim
13 words
A process as defined in claim 8 wherein the host material is ZnS.
Claim 15
Dependent Claim
26 words
A process as defined in claim 8 wherein the dopant is selected from among TbF 3 , SmF 3 , TMF 3 or PrF 3 .
Claim 16
Dependent Claim
14 words
A process as defined in claim 8 wherein the dopant is TbF 3 .
Claim 17
Dependent Claim
22 words
A process as defined in claim 8 wherein the emitting layer formed is annealed at a temperature of 500 to 700° C.
Claim 18
Dependent Claim
25 words
A process as defined in claim 12 wherein 1 to 5 mole % of TbF 3 is incorporated in the host material as the dopant.
Claim 19
Dependent Claim
53 words
A process as defined in claim 8 wherein the host material is ZnS or like sulfide, and the dopant comprises the fluoride and sulfide of the rate-earth element, the atom ratio (F/RE) being pre-adjusted to the range of 0.5 to 2.5 by doping the host material with these dopant compounds in controlled amounts.
Claim 20
Dependent Claim
36 words
A process as defined in claim 12 wherein the host material is doped with 0.5 to 2.0 mole % of TbF 3 and 0 .1 to 0.75 mole % of T b 2 S 3 .
Claim 21
Dependent Claim
39 words
A process as defined in claim 8 wherein the condition substantially free from oxygen gas and/or moisture is set by removing oxygen gas and/or moisture from a container for forming the emitting layer during formation of the emitting layer.
Claim 22
Dependent Claim
44 words
A process as defined in claim 8 wherein the emitting layer is formed by RF sputtering within a container, and the condition substantially free from oxygen gas and/or moisture is set by degassing the container while interrupting the sputtering operation during the sputtering process.
Claim 23
Dependent Claim
47 words
A process as defined in claim 8 wherein the emitting layer is formed by electron beam evaporation within a container, and the condition substantially free from oxygen gas and/or moisture is set by degassing the container while interrupting projection of an electron beam during the evaporation process.
References Cited (Backward Citations)
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