EP0209654A2
Expired / Lapsed
EP
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Semiconductor device having wiring electrodes
Assignee: Toshiba Corp
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Filing: 1986-05-07
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Granted: —
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Expires: 2006-05-07
Abstract
Abstract A semiconductor device of the invention has a p⁺-type silicon source region (24B), an insulating film (28, 18) formed on the source region (24B) and having a contact hole, and a wiring electrode (38B) connected to the source region (24B) through the contact hole. The wiring electrode (38B) has a Ti layer (32) formed on the insulating film and an exposed surface of the source region (24B), a TiN layer (34) formed on the Ti layer (32), and an Aℓ layer (36) formed on the TiN layer (34).
Inventors
- 👤 Takeo C/O Patent Division Maeda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 07:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10D; H10D64/00; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
111 words
A semiconductor device with a wiring electrode, comprising: a semiconductor element (24A, 24B); an insulating film (18, 28) having a contact hole (30A, 30B) and formed on said semiconductor element (24A, 24B); and a wiring electrode formed on said insulating film and connected to said semiconductor element through said contact hole characterised in that said wiring electrode comprises a first layer (32) of Ti formed on said insulating film (18, 28) and an exposed portion of said semiconductor element (24A, 24B), a second layer (34) of TiN formed on said first layer (32), and a third layer (36) having Aℓ as a major component and formed on said second layer (34).
Claim 2
Dependent Claim
111 words
A semiconductor device with a wiring electrode, comprising: a semiconductor element (24A, 24B); an insulating film (18, 28) having a contact hole (30A, 30B) and formed on said semiconductor element (24A, 24B); and a wiring electrode formed on said insulating film and connected to said semiconductor element through said contact hole characterised in that said wiring electrode comprises a first layer (32) of Ti formed on said insulating film (18, 28) and an exposed portion of said semiconductor element (24A, 24B), a second layer (34) of TiN formed on said first layer (32), and a third layer (36) having Aℓ as a major component and formed on said second layer (34).
Claim 3
Dependent Claim
41 words
A device according to claim 1, characterized in that said third layer is made of one member selected from the group consisting of pure Aℓ, an Aℓ-Si alloy, an Aℓ-Ti-Si alloy, an Aℓ-Zr-Si alloy, an Aℓ-Ti alloy, and an Aℓ-Zr alloy.
Claim 4
Dependent Claim
31 words
A device according to claim 2, characterized in that said wiring electrode further comprises a fourth layer (52) of Ti formed between said second layer (34) and said third layer (36).
Claim 5
Dependent Claim
26 words
A device according to claim 2, characterized in that said wiring electrode further comprises a fourth layer (50) of TiSi formed on said third layer (36).
Claim 6
Dependent Claim
28 words
A device according to claim 1, characterized in that said wiring electrode comprises first, second, and third layers (32, 34, 36) formed by deposition in the same vacuum.
Claim 7
Dependent Claim
32 words
A device according to claim 1, characterized in that said semiconductor element comprises a diffusion region of a second conductivity type formed in a semiconductor substrate (10) of a first conductivity type.
Claim 8
Dependent Claim
28 words
A device according to claim 6, characterized in that said wiring electrode has a second layer (34) formed by reactive sputtering deposition and annealing in an N₂ atmosphere.
Claim 9
Dependent Claim
36 words
A device according to claim 6, characterized in that said third layer (36) has a surface region made amorphous by implantation of at least one impurity selected from the group consisting of As, BF₂, and Ar.
Claim 10
Dependent Claim
69 words
A device according to claim 8, characterized by further comprising: a second insulating film (40) formed on said wiring electrode (38A) and having a second contact hole (42) exposing a portion of a surface region of said third layer (36); and a wiring layer (44) formed on said second insulating film (40) in contact with the surface region of said third layer (36) through said second contact hole (42).
Claim 11
Dependent Claim
37 words
A device according to claim 7, characterized in that said third layer (36) has a surface region made amorphous by ion implantation of at least one impurity selected from the group consisting of As, BF₂, and Ar.
Claim 12
Dependent Claim
69 words
A device according to claim 10, characterized by further comprising: a second insulating film (40) formed on said wiring electrode (38A) and having a second contact hole (42) exposing a portion of a surface region of said third layer (36); and a wiring layer (44) formed on said second insulating film (40) in contact with the surface region of said third layer (36) through said second contact hole (42).
References Cited (Backward Citations)
No citation records indexed.
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