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EP0209387A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor laser device

Assignee: Sharp Corp
•
Filing: 1986-07-17
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Granted: —
•
Expires: 2006-07-17
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Abstract

Abstract A semiconductor laser device comprising a double-heterostructure multi-layered crystal containing an active layer (13) for laser oscillation. A striped etching-protective thin layer (15) is fomed on said double-heterostructure multi-layered crystal, a striped-mesa multi-layered crystal is formed on said striped etching-protective thin layer, and a burying layer is formed on said double-heterostructure multi-layered crystal outside of both the striped thin layer and the striped-mesa multi-layered crystal, thereby providing refractive index distributions within said active layer corresponding to the inside and the outside of said striped-mesa multi-layered crystal and providing a striped structure functioning as a current path composed of said striped-mesa multi-layered crystal.

Inventors

  • 👤 Saburo Yamamoto
  • 👤 Toshiro Hayakawa
  • 👤 Takahiro Suyama
  • 👤 Kohsei Takahashi
  • 👤 Masafumi Kondo

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 11:23
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2054; H01S5/2081; H01S5/209; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32316

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 105 words
A semiconductor laser device comprising a double-heterostructure multi-layered crystal containing an active layer (13) for laser oscillation, and characterised by a striped etching-protective thin layer (15) formed on said double-heterostructure multi-layered crystal, a striped-mesa multi-layered crystal formed on said striped etching-protective thin layer, and a burying layer (20) formed on said double-heterostructure multi-layered crystal outside of both the striped thin layer and the striped-mesa multi-layered crystal, thereby providing refractive index distributions within said active layer (13) corresponding to the inside and the outside of said striped-mesa multi-layered crystal and providing ' a striped structure functioning as a current path composed of said striped-mesa multi-layered crystal.
Claim 2
Dependent Claim 105 words
A semiconductor laser device comprising a double-heterostructure multi-layered crystal containing an active layer (13) for laser oscillation, and characterised by a striped etching-protective thin layer (15) formed on said double-heterostructure multi-layered crystal, a striped-mesa multi-layered crystal formed on said striped etching-protective thin layer, and a burying layer (20) formed on said double-heterostructure multi-layered crystal outside of both the striped thin layer and the striped-mesa multi-layered crystal, thereby providing refractive index distributions within said active layer (13) corresponding to the inside and the outside of said striped-mesa multi-layered crystal and providing ' a striped structure functioning as a current path composed of said striped-mesa multi-layered crystal.

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